37results about How to "Faster access time" patented technology

A memory has a novel self-timing circuit that generates internal memory control signals. Control signals may include an address latch enable signal, a decoder enable signal, and a sense amplifier enable signal. The circuit has a timing loop whose timing mimics the timing of an access of the real memory. The timing loop includes dummy bit cells of identical construction to bit cells in the real array being accessed, a programmable delay circuit, and a programmable accelerator circuit. The dummy bit cells cause the timing of the control signals to track speed changes in the memory array being accessed. The programmable delay and accelerator circuits are usable to slow or speed the timing loop. The programmable delay and accelerator circuits are usable to achieve a desired yield to memory access speed tradeoff. Flexibility of the timing loop allows a memory to be designed before memory access timing characteristics are fixed.

A branch prediction unit stores a set of branch selectors corresponding to each of a group of contiguous instruction bytes stored in an instruction cache. Each branch selector identifies the branch prediction to be selected if a fetch address corresponding to that branch selector is presented. In order to minimize the number of branch selectors stored for a group of contiguous instruction bytes, the group is divided into multiple byte ranges. The largest byte range may include a number of bytes comprising the shortest branch instruction in the instruction set (exclusive of the return instruction). For example, the shortest branch instruction may be two bytes in one embodiment. Therefore, the largest byte range is two bytes in the example. Since the branch selectors as a group change value (i.e. indicate a different branch instruction) only at the end byte of a predicted-taken branch instruction, fewer branch selectors may be stored than the number of bytes within the group.

In a semiconductor storage device, such as a dynamic random access memory (DRAM), in which dynamic data is amplified and read on a bit line, a data line sense amplifier / write buffer connected to a data line of a memory array and a data line sense amplifier control signal generating logic circuit connected to a dummy data line of a dummy memory array are provided. A sense amplifier is activated in accordance with an output signal of the logic circuit.

In the present invention, one-time programmable memory includes a diode as an access device and a capacitor as a storage device, the diode includes four terminals, wherein the first terminal is connected to a word line, the second terminal is connected to one plate of the capacitor, the third terminal is floating, and the fourth terminal is connected to a bit line, and the capacitor includes two electrodes, wherein one of the capacitor plate serves as a storage node which is connected to the second terminal of the diode, and another plate of the capacitor is connected to a plate line, and the plate line is asserted to programming voltage which is higher than the regular supply voltage of the decoders and data latches, in order to breakdown the insulator of the capacitor when programming, but the plate line is connected to the regular supply voltage when read. And during read, the diode also serves as a sense amplifier to detect whether the storage node is forward bias or not, and it sends binary data to a latch device wherein includes a current mirror and a feedback loop, which cuts off the current path after latching. And dummy columns generate replica delay signals which guarantee timing margin and reduce cycle time. In addition, the memory cells are formed in between the routing layers, which memory cells can be stacked over the transistor or another capacitor memory cell.

The apparatus and method of the present invention employ solid state dynamic diffractive optical elements for reading information from a diffractive optics memory. The diffractive optics memory has stored therein information located at a plurality of points of the memory and at a plurality of angles at each one of the points so as to form a plurality of packets of information at each of the points. A matrix of the dynamic diffractive optical elements is configured to shape a laser beam to address the memory at one of the angles of one of the points to reconstruct one of the packets of information.