The invention discloses a high-sensitivity vertical
magnetic field sensor with a symmetrical structure. The
magnetic field sensor comprises a first vertical
magnetic field sensor and a second verticalmagnetic field sensor, which are vertically and symmetrically arranged, wherein the first vertical magnetic field sensor and the second vertical magnetic field sensor share a third N + region. The magnetic field sensor comprises a
silicon substrate, an insulator layer, a first P-region, a second P- region, a third P- region, a fourth P- region, a first N + region, a second N + region, a third N +region, a fourth N + region, a fifth N + region, a
gate dielectric layer and a gate. The magnetic field sensor with the symmetrical structure has a simple production process, a completely symmetricalstructure and low initial device offset, furthermore, the device offset can be eliminated by using the rotating
current technology, and the residual offset is low. The vertical magnetic field sensorhas
high magnetic field sensitivity, and can form a two-dimensional magnetic field sensor to realize the detection of a two-dimensional magnetic field parallel to a device plane.