8351 results about "Series production" patented technology

The invention relates to: A medication delivery device and a method of making such a device. The object of the present invention is to provide a handy medication delivery device that may be easily adjusted to the different needs of a given user in different situations and to the different needs of different users, and which is economic from a production point of view. The problem is solved in that it comprises a basis module (1) and one or more replaceable modules (2, 3, 4, 5, 6), each of which is adapted to cooperate mechanically and / or electronically with the basis module to provide a specific function, and the basis module includes resources that are jointly used by the replaceable modules. This has the advantage of providing a rational concept for economically supplying high quality, mass-produced devices capable of being customized to individual users' needs for functionality by avoiding the duplication of key components. The invention may be used in injector type, medication pump type, inhaler or spray type devices for delivering a discrete dose or a continuous dose of a medication to a user.

An object of the invention is to calibrate an upper pyrometer for indirectly measuring a substrate temperature at the time of epitaxial growth in a comparatively short time and with accuracy to thereby improve the quality of an epitaxial substrate.After calibrating an upper pyrometer by a thermocouple mounted to a temperature calibrating susceptor, a measured value of a lower pyrometer is adjusted to a calibrated value of the upper pyrometer. Then, a correlation line between substrate temperature indirectly measured by the upper pyrometer at the time of epitaxial growth onto a sample substrate and haze of a sample substrate measured immediately after epitaxial growth is set to indirectly measure a substrate temperature by the upper pyrometer at the time of epitaxial growth onto a mass-production substrate. Moreover, substrate temperature at the time of epitaxial growth onto the mass-production substrate is estimated by applying the haze of the mass-production substrate measured immediately after epitaxial growth to the correlation line and then a measured temperature of the upper pyrometer is adjusted to the estimated temperature.

The invention provides a technique that enables formation of minute patterns on an uneven substrate in volume production without reducing productivity. The method for fabricating a semiconductor device includes: first patterning a semiconductor film on a substrate to form element regions, each of which will be provided with a source / drain region and a channel region, second forming a gate insulating film covering segments of the patterned semiconductor film in the respective element regions, third forming gate electrodes on the gate insulating film at predetermined positions, and fourth forming the source / drain region and the channel region in each element region. At least the gate electrodes are formed by a process including an exposure step through a holographic exposure mask in the third step, and by a process including an exposure step through a projection exposure mask, the element regions are formed in the first step, and the source / drain regions and the channel regions are formed in the fourth step.

A nitride-based semiconductor element having superior mass productivity and excellent element characteristics is obtained. This nitride-based semiconductor element comprises a substrate comprising a surface having projection portions, a mask layer formed to be in contact with only the projection portions of the surface of the substrate, a first nitride-based semiconductor layer formed on recess portions of the substrate and the mask layer and a nitride-based semiconductor element layer, formed on the first nitride-based semiconductor layer, having an element region. Thus, the first nitride-based semiconductor layer having low dislocation density is readily formed on the projection portions of the substrate and the mask layer through the mask layer serving for selective growth. When the nitride-based semiconductor element layer having the element region is grown on the first nitride-based semiconductor layer having low dislocation density, a nitride-based semiconductor element having excellent element characteristics can be readily obtained. The first nitride-based semiconductor layer is formed through only single growth on the substrate, whereby a nitride-based semiconductor element having excellent mass productivity is obtained.

This invention comprises manufacture of photovoltaic cells by deposition of thin film photovoltaic junctions on metal foil substrates. The photovoltaic junctions may be heat treated if appropriate following deposition in a continuous fashion without deterioration of the metal support structure. In a separate operation, an interconnection substrate structure is provided, optionally in a continuous fashion. Multiple photovoltaic cells are then laminated to the interconnection substrate structure and conductive joining methods are employed to complete the array. In this way the interconnection substrate structure can be uniquely formulated from polymer-based materials employing optimal processing unique to polymeric materials. Furthermore, the photovoltaic junction and its metal foil support can be produced in bulk without the need to use the expensive and intricate material removal operations currently taught in the art to achieve series interconnections.

Ultra fine and nanometer powders and a method of producing same are provided, preferably refractory metal and ceramic nanopowders. When certain precursors are injected into the plasma flame in a reactor chamber, the materials are heated, melted and vaporized and the chemical reaction is induced in the vapor phase. The vapor phase is quenched rapidly to solid phase to yield the ultra pure, ultra fine and nano product. With this technique, powders have been made 20 nanometers in size in a system capable of a bulk production rate of more than 10 lbs / hr. The process is particularly applicable to tungsten, molybdenum, rhenium, tungsten carbide, molybdenum carbide and other related materials.

The invention provides a coil member of rotating electrical machinery, by which improvements in the mass production and downsizing thereof are enabled, which is a coil assembly for rotating electrical machinery, consisting of a plurality of coil combinations mounted at iron core slots, wherein the respective coil combinations 14 are inserted into slots at pitches equivalent to an appointed number of slots, and are formed of an integral coil member 21 in which the first and the second linear portions 21A and 21B alternately disposed at the inner layer side and the outer layer side in the slots, and the first and the second turning portions 21C and 21D for connecting the first and second linear portions 21A and 21B adjacent to each other outward of one end side and outward of the other end side in the lengthwise direction of the slots are integrated together. And, the first linear portion 21A of the appointed coil member 211 thereof, and the second linear portion 21B of another coil member 211 are laminated and disposed in the same slots.