37 results about "Quantum level" patented technology

The present invention is directed to systems and methods of providing universal quantum computation that avoid certain external control fields that either are hard or impossible to implement, or are serious sources of decoherence (errors). The systems and methods extend the set of scalable physical platforms suitable for implementing quantum computation in solid state, condensed matter and atomic and molecular physics systems. The invention includes identifying of suitable encodings of logical qubits into three physical qubits—i.e. three quantum mechanical systems of two levels—and performing quantum computing operations by changing the quantum states of physical qubits making up one or more logical qubits using only generalized anisotropic exchange interactions. This includes performing a quantum unitary operation over a single logical qubit or a non-local (entangling) two-qubit unitary operation. An exemplary embodiment of the invention uses a physical qubit represented by two electronic quantum levels of a nanoparticle supported in an electromagnetic cavity. The physical qubit, i.e. its quantum levels, can be tuned by electromagnetic field from a pulsed laser, so that the qubit can be brought into the interaction (resonance) with another physical qubit via exchange of cavity quantum electromagnetic modes.

There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough.

The invention provides a terahertz quantum level cascaded laser with integration of an absorption waveguide and a fabrication method of the terahertz quantum level cascaded laser. The terahertz quantum level cascaded laser comprises a semi-insulation GaAs substrate, a GaAs buffer layer, an n-type heavily-doping lower contact layer, an active region, an n-type heavily-doping upper contact layer, a first upper electrode metal layer, a second upper electrode metal layer and a lower electrode metal layer, wherein the GaAs buffer layer is arranged on the upper surface of the semi-insulation GaAs substrate, the n-type heavily-doping lower contact layer is arranged on the surface of the GaAs buffer layer, the active region is arranged on the surface of the n-type heavily-doping lower contact layer, the n-type heavily-doping upper contact layer is arranged on the surface of the active region, the first upper electrode metal layer and the second upper electrode metal layer are arranged on the surface of the n-type heavily-doping upper contact layer and are arranged at spacing distance of L, the second upper electrode metal layer is an upper electrode metal layer capable of high-waveguide loss after annealing, and the lower electrode metal layer is arranged on the surface of the n-type heavily-doping lower contact layer and on the two sides of the active region. With the terahertz quantum level cascaded laser with integration of the absorption waveguide and the fabrication method of the terahertz quantum level cascaded laser, provided by the invention, the problems that THz absorbers are discrete devices and the used materials are highly different from THz QCL so that the THz absorbers cannot be used in an on-chip integration system based on a THz OQL material in the prior art are solved.

A photoelectric conversion element includes a superlattice semiconductor layer including barrier sub-layers and quantum sub-layers (quantum dot sub-layers) alternately stacked and also includes a wavelength conversion layer containing a wavelength conversion material converting the wavelength of incident light. The wavelength conversion layer converts incident light into light with a wavelength corresponding to an optical transition from a quantum level of the conduction band of the superlattice semiconductor layer to a continuum level of the conduction band.

The invention relates to a method for synthesizing an AC quantum voltage waveform. The method includes: recoding the result of Δ-Σ modulation on the waveform to be synthesized, so that the corresponding high-speed digital code does not contain the low-frequency component of the waveform to be synthesized, and using bipolar pulses The generator outputs the digital code to drive the Josephson junction array to output the quantum voltage pulse corresponding to the forward pulse, thereby synthesizing the alternating quantum voltage signal. For the bipolar pulses output by the pulse generator, the contribution of the positive pulse and the negative pulse to the low-frequency components cancel each other out, the positive pulse drives the Josephson junction array to work at the first quantum voltage step, and the negative pulse drives the Josephson junction array at the first quantum voltage step. Zero quantum voltage steps. The AC quantum voltage waveform synthesis method can greatly simplify the AC quantum voltage waveform synthesis system, and can effectively reduce the induced voltage error caused by the Josephson junction array's own inductance, and improve the accuracy of the synthesized quantum voltage signal.

The embodiment of the invention provides a measurement system, method and device and equipment. The system comprises: a superconducting circuit located in a preset environment and used for generating superconducting quantum bits; and a control circuit electrically connected with the superconducting circuit, wherein the control circuit is used for acquiring initial environment information corresponding to the superconducting quantum bits, determining first environment information corresponding to the superconducting quantum bit under a preset condition that the quantum energy level of the superconducting quantum bit is a first preset energy level, determining second environment information corresponding to the superconducting quantum bit under the preset condition that the quantum energy level of the superconducting quantum bit is a second preset energy level, determining effective environment information based on the first environment information and the second environment information; and, according to the effective environment information and the initial environment information, determining associated information of any order. According to the technical scheme provided by the embodiment of the invention, the associated information of any order can be accurately and effectively determined, and then the environmental noise can be analyzed and identified based on the associated information of any order.

The invention discloses a feedback multipole quantum cascade ring laser, which comprises a substrate, a collector, a quantum cascade structure layer, a quantum energy level matching layer, a base, and an emitter arranged sequentially from bottom to top. Between the emitter and the base, between the quantum cascade structure layer and the collector, there is a step-like arrangement; the laser also includes a collector electrode arranged on the top of the collector or under the substrate, and a base electrode arranged on the top of the base Electrode, the emitter electrode arranged on top of the emitter. The laser is also etched with a ring waveguide and a strip straight waveguide coupled with the ring waveguide, and the strip straight waveguide includes a distributed feedback section and a coupling section. The feedback multipole quantum cascade ring laser has simple design, good tunable characteristics, multi-wavelength or wide-spectrum or chaotic laser or frequency comb output, and can effectively reduce mid-infrared and terahertz applications in a wide range of mid-infrared and terahertz applications. The application cost of the source.

The invention provides an application of the technique of reducing the generality of biomolecular molecular energy by utilizing biomolecular interaction. There is a difference in quantum energy level between atoms in biomolecules and electrons outside the atoms. The ultra-weak biophoton imaging system was used for detection, and it was found that the neurotransmitter glutamate interacts with glutamate receptors to achieve quantum energy transfer between molecules. For example, long-term incubation of glutamic acid in artificial cerebrospinal fluid with mouse brain slices can reduce the quantum energy level of glutamic acid, resulting in a significant decrease in its biological effect of inducing ultra-weak biophoton radiation, or even disappear completely. Experimental testing proves that the present invention has the characteristics of simple operation, reliability, high efficiency, and good scalability, and can be applied to the quantum reduction of various biomolecules, and can be used in life medical research, new drug development, preparation development, and improvement of natural and traditional drugs. It has wide application value in the fields of sex, quantum biomedical prevention and treatment, chemical industry, agricultural production, functional food industry and environmental protection.

The invention relates to the field of optical switches, in particular to a control method of an all-optical switch. The technical problem that an existing optical switch is complex in technology and poor in practicability is solved. The control method of the all-optical switch comprises the following steps that (1) two beams of control light enter a four-energy-level optical medium in an incidence mode, and intersect in the four-energy-level optical medium, and one beam of signal light enters the four-energy-level optical medium in an incidence mode, and passes through the region of intersection between the two beams of control light; (2) one beam of coupling light enters the four-energy-level optical medium in an incidence mode, and passes through the region of intersection between the signal light and the two beams of control light; (3) intensity changes of zero-level diffraction light can be achieved by changing the existence state of the control light. According to the control method of the all-optical switch, the control light and the coupling light used in an optical switch system can be weak, and even can be light at the quantum level, energy consumption is greatly reduced, and the all-optical switch can even serve as a quantum all-optical switch device.