37 results about "Quantum level" patented technology

The invention discloses a one-dimensional modulation continuous variable quantum key distribution system based on heterodyne detection, and an implementation method thereof. Pulse laser is divided bya first beam splitter into signal light and local oscillator light at a sending end, an electro-optic phase modulator modulates the signal light, and the modulated signal light is attenuated to a quantum level by an adjustable light attenuator; the signal light at the quantum level is merged with the local oscillator light by a polarization coupler and is transmitted to a receiving end by a quantum channel; signal detection is performed on the receiving end by the heterodyne detection technology, the output information of a first differential amplifier and a second differential amplifier are sent to a data collection card and a computer system for collection and analysis processing, and a group of safe quantum keys is obtained on the sending end and the receiving end separately. Accordingto the one-dimensional modulation continuous variable quantum key distribution system, the modulation process in the continuous variable quantum key distribution system can be achieved just by one electro-optic phase modulator, thereby effectively simplifying the system structure, reducing the volume of the device, reducing the data processing volume and reducing the manufacturing cost.

The present invention is directed to systems and methods of providing universal quantum computation that avoid certain external control fields that either are hard or impossible to implement, or are serious sources of decoherence (errors). The systems and methods extend the set of scalable physical platforms suitable for implementing quantum computation in solid state, condensed matter and atomic and molecular physics systems. The invention includes identifying of suitable encodings of logical qubits into three physical qubits—i.e. three quantum mechanical systems of two levels—and performing quantum computing operations by changing the quantum states of physical qubits making up one or more logical qubits using only generalized anisotropic exchange interactions. This includes performing a quantum unitary operation over a single logical qubit or a non-local (entangling) two-qubit unitary operation. An exemplary embodiment of the invention uses a physical qubit represented by two electronic quantum levels of a nanoparticle supported in an electromagnetic cavity. The physical qubit, i.e. its quantum levels can be tuned by electromagnetic field from a pulsed laser, so that the qubit can be brought into the interaction (resonance) with another physical qubit via exchange of cavity quantum electromagnetic modes.

The disclosed activating and magnetizing device for a generation system of activated and magnetized water to improve water energy stage comprises: a carrier with a system to induce, transfer and multiply the primary and secondary energy on energy medicine and quantum levels independently or together. This invention is fit to water and drug to introduce benefits to people health.

Methods and systems for simulating the natural tempo of humans are provided. The method utilizes multiples of a basic unit of duration, or quantum unit, of human timing. Unconscious, but precise, compensations occur through imperceptible changes in the timing quantum level. An application of natural human tempo to improve the basic metronome function by humanizing it is also provided. Other ramifications of human tempo simulation are also discussed, including robots and computer games and graphics.

A photodetector 1A comprises an optical element 10, having a structure including first regions and second regions periodically arranged with respect to the first regions along a plane perpendicular to a predetermined direction, for generating an electric field component in the predetermined direction when light is incident thereon along the predetermined direction; arid a semiconductor multilayer body 4 having a quantum cascade structure, arranged on the other side opposite from one side in the predetermined direction with respect to the optical element, for producing a current according to the electric field component in the predetermined direction generated by the optical element 10; while the quantum cascade structure includes an active region 4b having a first upper quantum level and a second upper quantum level lower than the first upper quantum level, and an injector region 4c for transporting an electron excited by the active region 4b.

The invention relates to the field of optical switches, in particular to a control method of an all-optical switch. The technical problem that an existing optical switch is complex in technology and poor in practicability is solved. The control method of the all-optical switch comprises the following steps that (1) two beams of control light enter a four-energy-level optical medium in an incidence mode, and intersect in the four-energy-level optical medium, and one beam of signal light enters the four-energy-level optical medium in an incidence mode, and passes through the region of intersection between the two beams of control light; (2) one beam of coupling light enters the four-energy-level optical medium in an incidence mode, and passes through the region of intersection between the signal light and the two beams of control light; (3) intensity changes of zero-level diffraction light can be achieved by changing the existence state of the control light. According to the control method of the all-optical switch, the control light and the coupling light used in an optical switch system can be weak, and even can be light at the quantum level, energy consumption is greatly reduced, and the all-optical switch can even serve as a quantum all-optical switch device.

An solar cell of the present invention includes a p-type semiconductor layer, an n-type semiconductor layer, and a superlattice semiconductor layer interposed between the p-type semiconductor layer and the n-type semiconductor layer, in which the superlattice semiconductor layer has a superlattice structure in which barrier layers and quantum dot layers each including a plurality of quantum dots are stacked alternately and repeatedly, the superlattice semiconductor layer contains an n-type dopant and has at least two intermediate energy levels at which electrons photoexcited from the valence band of the quantum dots or the barrier layers can be present for a certain period of time, each of the intermediate energy levels is located between the top of the valence band of the barrier layers and the bottom of the conduction band of the barrier layers, each of the intermediate energy levels is formed from one or a plurality of quantum levels of the quantum dots, and the superlattice semiconductor layer contains an activated n-type dopant.

The invention provides a terahertz quantum level cascaded laser with integration of an absorption waveguide and a fabrication method of the terahertz quantum level cascaded laser. The terahertz quantum level cascaded laser comprises a semi-insulation GaAs substrate, a GaAs buffer layer, an n-type heavily-doping lower contact layer, an active region, an n-type heavily-doping upper contact layer, a first upper electrode metal layer, a second upper electrode metal layer and a lower electrode metal layer, wherein the GaAs buffer layer is arranged on the upper surface of the semi-insulation GaAs substrate, the n-type heavily-doping lower contact layer is arranged on the surface of the GaAs buffer layer, the active region is arranged on the surface of the n-type heavily-doping lower contact layer, the n-type heavily-doping upper contact layer is arranged on the surface of the active region, the first upper electrode metal layer and the second upper electrode metal layer are arranged on the surface of the n-type heavily-doping upper contact layer and are arranged at spacing distance of L, the second upper electrode metal layer is an upper electrode metal layer capable of high-waveguide loss after annealing, and the lower electrode metal layer is arranged on the surface of the n-type heavily-doping lower contact layer and on the two sides of the active region. With the terahertz quantum level cascaded laser with integration of the absorption waveguide and the fabrication method of the terahertz quantum level cascaded laser, provided by the invention, the problems that THz absorbers are discrete devices and the used materials are highly different from THz QCL so that the THz absorbers cannot be used in an on-chip integration system based on a THz OQL material in the prior art are solved.

The invention discloses an ultraviolet single-wavelength MSM photoelectric detector, and belongs to the technical field of semiconductor photoelectric devices. The ultraviolet single-wavelength MSM photoelectric detector based on two-dimensional crystal lattices uses the quantum restriction effect to achieve the adjustable single wavelength and can develop the advantage of high quantum level state density more easily. The ultraviolet single-wavelength MSM photoelectric detector comprises a substrate, the two-dimensional crystal lattices with the quantum level and a metal interdigital electrode. The two-dimensional crystal lattices grow on the substrate alternatively, and the number of the alternative growth periods is at least 20. Each two-dimensional crystal lattice in each alternative growth period is composed of a first dielectric film layer and a second dielectric film layer, wherein the forbidden band of the first dielectric film layer is arranged in the forbidden band of the second dielectric film layer and forms a semiconductor I-class superlattice, the first dielectric film is used as a potential well, and the second dielectric film is used as a potential barrier; the Schottky contact is formed between the metal interdigital electrode and the two-dimensional crystal lattices.

The invention relates to a method for adjusting water molecule cluster through quantum resonance, which is characterized in that according to hydrogen bond quantum levels of different water molecule cluster structures, by combining with an infrared spectroscopy experiment technology, an infrared light frequency band corresponding to the resonance absorption is determined, the selective infrared spectroscopy is formed by reducing or increasing the infrared light intensity of different frequency bands, the infrared light formed by the selective infrared spectroscopy is used for acting on the water molecule cluster, the break probability of the hydrogen bond of different water molecule cluster structures can be reduced or increased, thereby the water molecule cluster structures can be adjusted, ordering water molecule cluster having synergism with biomolecule can be increased, so that better biological activity effect can be provided.

For a semiconductor light emitting device using GaInNAs as an active layer, since GaInNAs includes N, the critical thickness is reduced and it is difficult to lengthen the wavelength of a laser beam. A semiconductor light emitting device is prepared, which has an active layer comprising a quantum well layer formed by successively stacking a GaInNAs layer and a GaInAs layer and GaAs barrier layers stacked on both sides of the quantum well layer. The quantum level of the conduction band is present above the conduction band edge of the GaInAs layer.

Systems and method for applying security measures to data sets requiring external quantum-level processing. Specifically, segmenting a data set into a plurality of data blocks / segments, such that each data block is communicated to different external entities for subsequent quantum-level computing processing of the data blocks. Once the data blocks have been quantum-level processed by the external entities and returned to the data provider / owner, the data blocks are combined to re-form the data set.

There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough.

The invention discloses a feedback type multi-pole quantum cascade ring laser. The laser comprises a substrate, a collector, a quantum cascade structure layer, a quantum energy level matching layer, abase and an emitter which are sequentially arranged from bottom to top, wherein stepped arrangement is formed between the emitter and the base and between the quantum cascade structure layer and thecollector; the laser further comprises a collector electrode arranged at the top of the collector electrode or below the substrate, a base electrode arranged at the top of the base electrode and an emitter electrode arranged at the top of the emitter electrode; an annular waveguide and a strip-shaped straight waveguide coupled with the annular waveguide are further etched on the laser, and the strip-shaped straight waveguide comprises a distributed feedback section and a coupling section. The laser is simple in design and good in tunability, can output multi-wavelength or wide-spectrum or chaotic laser or frequency comb, and can effectively reduce the application cost of mid-infrared and terahertz sources in wide mid-infrared and terahertz applications.

The invention discloses a method for determining the absorption spectrum of an optoelectronic device based on a ZnMgO / MgO / ZnO heterojunction material, which mainly solves the problem that the existingoptoelectronic device cannot test the absorption spectrum before preparation. The method comprises the following steps: 1) setting parameters of the ZnMgO / MgO / ZnO heterojunction, sequentially calculating piezoelectric polarization intensity, polarization charge surface density, built-in electric field and conduction band order of the system in the heterojunction; 2) Simultaneous calculation of Fermi energy level, electron concentration and ionization impurity concentration, electron wave function and quantum energy level of the heterojunction; 3) calculating that optical absorption coefficient of the intersubband transition; 4) according to 1)-3), the optical absorption coefficients of intersubband transitions are calculated for different Mg compositions, different thickness of well layerand barrier layer, and the absorption spectra are obtained by fitting the parameters and formulas. The invention can determine the working band of the device before manufacturing the device, and canbe used for designing the photoelectric device based on the ZnMgO / MgO / ZnO heterojunction material.

The invention provides a terahertz quantum level cascaded laser with integration of an absorption waveguide and a fabrication method of the terahertz quantum level cascaded laser. The terahertz quantum level cascaded laser comprises a semi-insulation GaAs substrate, a GaAs buffer layer, an n-type heavily-doping lower contact layer, an active region, an n-type heavily-doping upper contact layer, a first upper electrode metal layer, a second upper electrode metal layer and a lower electrode metal layer, wherein the GaAs buffer layer is arranged on the upper surface of the semi-insulation GaAs substrate, the n-type heavily-doping lower contact layer is arranged on the surface of the GaAs buffer layer, the active region is arranged on the surface of the n-type heavily-doping lower contact layer, the n-type heavily-doping upper contact layer is arranged on the surface of the active region, the first upper electrode metal layer and the second upper electrode metal layer are arranged on the surface of the n-type heavily-doping upper contact layer and are arranged at spacing distance of L, the second upper electrode metal layer is an upper electrode metal layer capable of high-waveguide loss after annealing, and the lower electrode metal layer is arranged on the surface of the n-type heavily-doping lower contact layer and on the two sides of the active region. With the terahertz quantum level cascaded laser with integration of the absorption waveguide and the fabrication method of the terahertz quantum level cascaded laser, provided by the invention, the problems that THz absorbers are discrete devices and the used materials are highly different from THz QCL so that the THz absorbers cannot be used in an on-chip integration system based on a THz OQL material in the prior art are solved.

The invention discloses a multipolar quantum cascade ring laser, and the laser comprises a substrate, a collector, a quantum cascade structure layer, a quantum energy level matching layer, a base andan emitter which are sequentially arranged from bottom to top, wherein the stepped arrangement is set between the emitter and the base, and between the quantum cascade structure layer and the collector; the laser further comprises a collector electrode arranged at the top of the collector electrode or below the substrate, a base electrode arranged at the top of the base electrode and an emitter electrode arranged at the top of the emitter electrode. And an annular waveguide and a strip-shaped straight waveguide coupled with the annular waveguide are etched on the laser. The multi-polar quantumcascade ring laser is simple in design and good in tunability, can output multi-wavelength or wide-spectrum or chaotic laser or frequency combs, and can effectively reduce the application cost of mid-infrared and terahertz sources in wide mid-infrared and terahertz applications.

The invention discloses a quantum-level cascaded laser with a vertical cavity surface emission function. The quantum-level cascaded laser comprises a quantum dot active area layer, a distribution Bragg reflector layer and a grating layer, wherein the quantum dot active area layer is formed by inserting a quantum dot insertion layer in each period of an active area of the laser; and the distribution Bragg reflector layer is combined with the grating layer to form a vertical resonant cavity so as to realize surface emission. According to the laser, quantum dot insertion layers are introduced atproper positions in the active area layer, and a quantum dot state serves as a final state of electronic radiative transition, so that a radiation mode of the device has an electric field component vertical to a quantum well plane and then a traditional vertical cavity surface emission laser can be prepared. The laser is capable of improving the power and conversion efficiency of the device and reducing the threshold current on one hand, and is capable of remarkably reducing the size of the device and decreasing the threshold current on the other hand.

Methods, apparatuses, and systems include acquiring initial environmental information corresponding to a superconducting qubit received from a superconducting circuit, the superconducting circuit being in an environment; determining first environmental information corresponding to the superconducting qubit in response to a quantum energy level of the superconducting qubit being a first preset energy level; determining second environmental information corresponding to the superconducting qubit in response to the quantum energy level of the superconducting qubit being a second preset energy level; determining effective environmental information based on the first environmental information and the second environmental information; and determining arbitrary-order correlation information for identifying an environmental noise based on the effective environmental information and the initial environmental information.

A photoelectric conversion element includes a superlattice semiconductor layer including barrier sub-layers and quantum sub-layers (quantum dot sub-layers) alternately stacked and also includes a wavelength conversion layer containing a wavelength conversion material converting the wavelength of incident light. The wavelength conversion layer converts incident light into light with a wavelength corresponding to an optical transition from a quantum level of the conduction band of the superlattice semiconductor layer to a continuum level of the conduction band.

The invention provides application of a generic technology to quantum energy increasing of biomolecules through a photosynthetic reaction. Atoms in the biomolecules, and electrons outside the atoms have the quantum level difference, detecting is carried out through an ultra-weak biophoton imaging system (UBIS), by using a photosynthetic reactor in plant extraction for hatching the biomolecules contained in cytochylema for a certain time under continuous natural or artificial illumination, the quantum level of the biomolecules can be improved, and radiation of brain slice biophoton induced by the biomolecules can be remarkably increased; and through experimental detection, it proves that the application has the advantages of being easy and convenient to operate, reliable, high in efficiency, good in expansibility, rich in function and the like, can be applied to quantum energy increasing of the various biomolecules, and has application value in fields such as life medical science research, new drug development, preparation development, natural and traditional drug modification, quantum biomedicine preventing and treating, the chemical industry, agricultural production, the food andbeverage industry, food and beverage additives, and food safety and environmental protection.

The invention discloses a quantum entanglement purification device and method, and the device comprises a quantum entanglement building module which is used for building a quantum entanglement state between quantum memories; a local operation module which is used for enabling the electromagnetic pulses to act on the quantum memories respectively, so that the electromagnetic pulses and the quantum energy levels of the quantum memories resonate; a laser module which is used for reading excitation in the quantum memory to enable the quantum memory to emit anti-Stokes photons; local detection modules which are used for detecting anti-Stokes photons, wherein the quantum memories are in one-to-one correspondence with the local detection modules; and a central control module which is used for judging whether quantum entanglement purification is successful or not according to a detection result of the local detection module, and controlling the quantum entanglement establishment module, the local operation module, the laser module and the local detection module to repeatedly perform quantum entanglement purification under the condition that the quantum entanglement purification is not successful. According to the device and the method, the fidelity of the initial quantum entanglement state is not limited, and the high-fidelity quantum entanglement state can be realized by controlling the implementation times of quantum entanglement purification.