Absorption spectra of photoelectric devices based on ZnMgO/MgO/ZnO heterojunction materials

Abstract

The invention discloses a method for determining the absorption spectrum of an optoelectronic device based on a ZnMgO / MgO / ZnO heterojunction material, which mainly solves the problem that the existingoptoelectronic device cannot test the absorption spectrum before preparation. The method comprises the following steps: 1) setting parameters of the ZnMgO / MgO / ZnO heterojunction, sequentially calculating piezoelectric polarization intensity, polarization charge surface density, built-in electric field and conduction band order of the system in the heterojunction; 2) Simultaneous calculation of Fermi energy level, electron concentration and ionization impurity concentration, electron wave function and quantum energy level of the heterojunction; 3) calculating that optical absorption coefficient of the intersubband transition; 4) according to 1)-3), the optical absorption coefficients of intersubband transitions are calculated for different Mg compositions, different thickness of well layerand barrier layer, and the absorption spectra are obtained by fitting the parameters and formulas. The invention can determine the working band of the device before manufacturing the device, and canbe used for designing the photoelectric device based on the ZnMgO / MgO / ZnO heterojunction material.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a method for determining the absorption spectrum of a photoelectric device, which can be used in the manufacture of near-infrared photodetectors and quantum cascade lasers. Background technique [0002] In recent years, many optoelectronic devices have been widely used, such as photodetectors, optical receivers, and optical amplifiers. The core working principle of these devices involves the process of electrons absorbing photons when they transition from a low-energy level to a high-energy level. The absorption spectrum is an important means to describe the relationship between the intensity of electronic transitions and the energy of incident light. At present, the absorption spectrum of photoelectric devices is mainly measured by infrared spectrometer, visible light divider, and X-ray absorption spectrometer. However, these methods can only test and analy...

AI Technical Summary

Problems solved by technology

However, these methods can only test and analyze the samples after the device preparation is basically completed, and cannot measure the absorption spectrum in the device simulation stage, so there is a more accurate prediction of the device absorption spectrum

It is not conducive to the determination of the working range and the improvement of accuracy in the device manufacturing process, and also wastes financial and material resources to a certain extent.

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