67 results about "P–n diode" patented technology

All low-temperature processes are used to fabricate a variety of semiconductor devices in a substrate the does not include an epitaxial layer. The devices include a non-isolated lateral DMOS, a non-isolated extended drain or drifted MOS device, a lateral trench DMOS, an isolated lateral DMOS, JFET and depletion-mode devices, and P-N diode clamps and rectifiers and junction terminations. Since the processes eliminate the need for high temperature processing and employ “as-implanted” dopant profiles, they constitute a modular architecture which allows devices to be added or omitted to the IC without the necessity of altering the processes used to produce the remaining devices.

A solar cell device includes a p-n diode component over a substrate, the p-n diode component including at least one subcell, each subcell including an n-type semiconductor layer and a p-type semiconductor layer to form a p-n junction. The solar cell device further includes at least two features selected from: i) a nano-structured region between at the p-n junction of at least one subcell; ii) an n-type and/or a p-type layer of at least one subcell that includes a built-in quasi-electric field; and iii) a photon reflector structure. Alternatively, the solar cell device includes at least two subcells, and further includes a nano-structured region at the p-n junction of at least one of the subcells, wherein the subcells of the solar cell device are connected in parallel to each other by the p-type or the n-type semiconductor layer of each subcell. Alternatively, the solar cell device further includes a nano-structured region at the p-n junction of at least one subcell, wherein the nano-structured region includes i) a plurality of quantum dots or quantum wells that include InN or InGaN, the quantum dots or quantum wells embedded within a wide band gap matrix that includes InGaN, GaN, or AlGaN, or ii) a plurality of quantum dots or quantum wells that include InAs, GaAs or InGaAs, the quantum dots or quantum wells embedded within a wide band gap matrix that includes InGaP, GaAsP, AlGaAs, AlGaInAs or AlGaInP.

An optoelectronic device is provided. The optoelectronic device includes a P-type semiconductor substrate, an N-type transparent amorphous oxide semiconductor (TAOS) layer located on a surface of the P-type semiconductor substrate, and a rear electrode on another surface of the P-type semiconductor substrate. The N-type TAOS layer constructs a portion of a P-N diode, and serves as a window layer and a front electrode layer.

LEDs and an electronic device are disclosed. In an embodiment an LED includes a p-n diode and a dielectric mirror spanning along a lateral sidewall of the p-n diode and directly underneath the p-n diode. An opening is formed in the dielectric mirror directly underneath the p-n diode, and a bottom conductive contact is on the dielectric mirror directly underneath the p-n diode and within the opening in the dielectric mirror.

The invention provides a liquid crystal display. The liquid crystal display comprises a liquid crystal module, a backlight module, a driving and detecting module and a plurality of light sensors, wherein the liquid crystal module consists of a polarizer, a glass substrate, liquid crystal, a color filter, a thin film transistor, a black matrix, a plurality of conductive wires and the like; the backlight module comprises a light source, a light guide plate, a diffuser sheet and the like; the driving and detecting module comprises a data driver, a gate driver, a light sensor driver, a light sensing detector and the like; the plurality of light sensors consist of P-N diodes or thin film transistors; one light sensor is arranged on each pixel unit respectively; and the plurality of light sensors are used for sensing red and infrared radiation which is transmitted by the light source, passes through the liquid crystal module and is then reflected back by touch fingers of a light touch liquid crystal user and passes through the color filter, so that a sense signal is output for judging a finger touch position.

Rectifier circuits which are usable, instead of diodes, for rectifying alternating voltages, and which, like diodes, form two-terminal networks having a cathode terminal and an anode terminal. The power loss of these rectifier circuits is clearly less that the power loss of silicon p-n diodes. These rectifier circuits also include voltage clamping functions.

Carbon nanotube (CNT)-based devices and technology for their fabrication are disclosed. The discussed electronic and photonic devices and circuits rely on the nanotube arrays grown on a variety of substrates, such as glass or Si wafer. The planar, multiple layer deposition technique and simple methods of change of the nanotube conductivity type during the device processing are utilized to provide a simple and cost effective technology for a large scale circuit integration. Such devices as p-n diode, CMOS-like circuit, bipolar transistor, light emitting diode and laser are disclosed, all of them are expected to have superior performance then their semiconductor-based counterparts due to excellent CNT electrical and optical properties. When fabricated on Si-wafers, the CNT-based devices can be combined with the Si circuit elements, thus producing hybrid Si-CNT devices and circuits.

The present invention relates to various switching device structures including Schottky diode (10), P-N diode, and P-I-N diode, which are characterized by low defect density, low crack density, low pit density and sufficient thickness (>2.5 um) GaN layers (16) of low dopant concentration (<1E16 cm−3) grown on a conductive GaN layer (14). The devices enable substantially higher breakdown voltage on hetero-epitaxial substrates (<2 KV) and extremely high breakdown voltage on homo-epitaxial substrates (>2 KV).

A photodiode with an improved electrostatic damage threshold is disclosed. A Zener or an avalanche diode is connected in parallel to a photodiode. Both diodes are integrated into the same photodiode housing. The diodes can be mounted on a common header or onto each other. An avalanche photodiode and an avalanche diode can be fabricated on a common semiconductor substrate. A regular p-n diode connected in series, cathode-to-cathode or anode-to-anode, to a Zener diode, forms a protection circuit which, when connected in parallel to a photodiode, provides a smaller electrical capacity increase as compared to a simpler circuit consisting just of a Zener or an avalanche diode.

A lateral p-n diode in the center of and surrounded by a vertical Silicon-Controlled Rectifier (SCR) forms an Electro-Static-Discharge (ESD) protection structure. The lateral p-n diode has a cross-shaped P+ diode tap with four rectangles of N+ diode regions in each corner of the cross. A P-well under the P+ diode tap is also an anode of a vertical PNPN SCR that has a deep N-well in a P-substrate. The deep N-well surrounds the lateral diode. Triggering MOS transistors are formed just beyond the four ends of the cross shaped P+ diode tap. Each triggering MOS transistor has N+ regions at the edge of the deep N-well and in the P-substrate that act as the cathode terminals. A deep P+ implant region under the N+ region at the edge of the deep N-well decreases a trigger voltage of the vertical SCR.

The invention discloses a strobing device unit used for a cross array integration way of a double-pole type resistance change storage. The strobing device unit used for the cross array integration way of the double-pole type resistance change storage is characterized in that the strobing device unit comprises an n-p diode and a p-n diode. Polarity of the n-p diode and polarity of the p-n diode are opposite. The polarity of the n-p diode is in parallel connection with polarity of the p-n diode. The strobing device unit is has the feature of the two-way rectification. The strobing device unit used for the cross array integration way of the double-pole type resistance change storage has the feature of the two-way rectification. High electric current density can be provided of the random voltage polarity in the brakeover-state. Rectification ratio (RV2/RV) is provided in the read-voltage. The phenomenon of read-interference in the double-pole type resistance change storage cross array structure can be restrained. Misreading is avoided. The problem that the common rectification diode is only suitable for the single-pole type resistance change storage cross array is solved.

A device including at least one heterostructure p/n diode, including a substrate based on HgCdTe including for each diode: a first part having a first cadmium concentration; a concentrated part, having a second cadmium concentration, greater than the first concentration, forming a heterostructure with the first part; a p+ doped zone situated in the concentrated part and extending into the first part, forming a p/n junction with an n-doped position of the first part, or a base plate; and the concentrated part is only located in the p+ doped zone and forms a substantially constant cadmium concentration well.

The present invention discloses a magnetic random access memory comprising MRAM cell groups connected in series in forms of an NAND. The MRAM cell groups comprise magnetic tunnel junctions between word lines and P-N diodes, and memory cells for reading and writing data. In the present invention, the cell size can be reduced by comprising MRAM cell arrays wherein one or more MRAM cells are connected in series in forms of an NAND.

A fuel cell system that employs a diode electrically coupled between bipolar plates in a fuel cell of a fuel cell stack for preventing the fuel cell between the plates from reversing its polarity. The diode is a thin-sheet p-n diode including doped semiconductor layers and has a thickness relative to the thickness of the MEA in the fuel cell so that the overall stack thickness does not increase. When the fuel cell is operating properly the diode does not conduct and all of the current through the fuel cell goes through the MEA. If the electric load on the stack increases to a level beyond the capability of the fuel cell, where the potential across the fuel cell goes significantly below zero, the diode will begin to conduct so that any current that cannot travel through the MEA with the cell voltage less than one negative forward diode voltage drop is able to go around the MEA through the diode.

A photovoltaic cell comprising a thin semiconductor lamina is described; the lamina is formed by cleaving from a donor wafer while the wafer is bonded to a receiver element which provides mechanical support. Thus fabrication steps performed following cleaving are advantageously performed at temperatures that will not damage the receiver element. By fabricating a cell comprising an MIS-type tunnel diode, rather than a conventional p-n diode, a high-temperature doping step may be avoided.