Strobing device unit used for cross array integration way of double-pole type resistance change storage

Abstract

The invention discloses a strobing device unit used for a cross array integration way of a double-pole type resistance change storage. The strobing device unit used for the cross array integration way of the double-pole type resistance change storage is characterized in that the strobing device unit comprises an n-p diode and a p-n diode. Polarity of the n-p diode and polarity of the p-n diode are opposite. The polarity of the n-p diode is in parallel connection with polarity of the p-n diode. The strobing device unit is has the feature of the two-way rectification. The strobing device unit used for the cross array integration way of the double-pole type resistance change storage has the feature of the two-way rectification. High electric current density can be provided of the random voltage polarity in the brakeover-state. Rectification ratio (RV2 / RV) is provided in the read-voltage. The phenomenon of read-interference in the double-pole type resistance change storage cross array structure can be restrained. Misreading is avoided. The problem that the common rectification diode is only suitable for the single-pole type resistance change storage cross array is solved.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a gating device unit applicable to a cross-array integration mode of a bipolar resistive memory. Background technique [0002] Resistance random access memory (resistive random access memory, RRAM) is an emerging non-volatile storage technology, in terms of device structure, cell area, storage density, power consumption, programming / erasing speed, 3D integration and multi- It has great advantages in many aspects such as value storage, and has become one of the most powerful competitors to replace the mainstream product "flash memory" in the current non-volatile storage technology market. The sandwich structure of metal / insulator / metal (MIM) is the basic structure of RRAM, and this vertical MIM structure is beneficial to realize ultra-high-density storage by means of cross-array integration. In the interleaved array structure, the vertical parallel intersections contain ...

AI Technical Summary

Problems solved by technology

However, usually the rectifier diode only has forward conduction characteristics and cannot provide enough current in the reverse direction. Therefore, the current resistive memory that can be integrated with the rectifier diode must have unipolar resistance transition characteristics, that is, the programming and switching characteristics of the resistive memory. Erase operations must be done with the same voltage polarity

However, for the currently common bipolar resistance transition memory, its programming and erasing operations must be completed under opposite voltage polarities, and a single rectifier diode cannot meet the current requirements for its reverse erasing.

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