104 results about "Nanotopography" patented technology

The present invention relates to tissue engineered compositions and methods comprising nanotopographic surface topography (“nanotopography”) for use in modulating the organization and / or function of multiple cell types.

The present invention provides compositions including a cell contacting surface or film comprising nanotopography of nanofibers, nanotubes, nanochannels, microchannels or microwells, which are capable of enhancing or promoting cell differentiation or cell viability. The compositions are useful as medical implants, including orthopedic implants, dental implants, cardiovascular implants, neurological implants, neurovascular implants, gastrointestinal implants, muscular implants, and ocular implants. The present invention also provides methods of treating a patient in need of such an implant.

A system for searching for patterns of semiconductor wafer features for use in silicon manufacturing and device fabrication processes, the system including: a data acquisition system 00 for acquiring scan data from differing types of semiconductor wafer scanning tools such as wafer dimensional tools 10, wafer inspection tools 12, and wafer nanotopography tools 14; a buffer system 02 for providing temporary storage for scan data transmitted and for providing fault tolerance; a server system 04 for providing storage for the scan data transmitted from the buffer system 02 and converting the scan data into a format used by and stored in a database 08 management system; an analysis system 06 client station including a display and communicating with the server system 04, the analysis system 06 and the server system 04 providing scan data structuring and query operations and data transfer operations.

Semiconductor wafers are leveled by a) position-dependent measurement of a wafer-characterizing parameter to determine the position-dependent value of this parameter over an entire surface of the semiconductor wafer, b) etching the entire surface of the semiconductor wafer simultaneously under the action of an etching medium with simultaneous illumination of the entire surface, the material-removal etching rate dependent on the light intensity at the surface of the semiconductor wafer, the light intensity being established in a position-dependent manner such that the differences in the position-dependent values of the parameter measured in step a) are reduced by the position-dependent material-removal rate, semiconductor wafers with improved flatness and nanotopography and SOI wafer with improved layer thickness homogeneity are achieved. An apparatus for carrying out the method is also disclosed.

Adaptive imprint planarization provides a surface having desired shape characteristics. Generally, topography of a first surface is mapped to provide a density map. The density map is evaluated to provide a drop pattern for dispensing polymerizable material on the first surface. The polymerizable material is solidified and etched to provide a second surface having the desired shape characteristics. Additionally, adaptive imprint planarization compensates for parasitic effects of the imprinting process.

Adaptive nanotopography sculpting may be used to alter nanotopography and roughness without altering the nominal shape of a surface. Generally, adaptive nanotopography sculpting provides a surface having desired shape characteristics. Topography of a first surface is mapped to provide a density map. The density map is evaluated to provide a drop pattern for dispensing polymerizable material on the first surface. The polymerizable material is solidified and etched to provide a second surface having the desired shape characteristics.

A system for integrating semiconductor wafer data for use in silicon manufacturing and device fabrication processes, the system including: a data acquisition system 00 capable of acquiring scan data from differing types of semiconductor wafer scanning tools such as wafer dimensional tools 10, wafer inspection tools 12, and wafer nanotopography tools 14, a buffer system 02 for providing temporary storage for scan data transmitted and for providing fault tolerance; a server system 04 for providing storage for the scan data transmitted from the buffer system 02 and for converting the scan data into a format used by and stored in a database 08 management system; and an analysis system 06, the analysis system 06 and the server system 04 providing wafer data management, process monitoring, wafer data analysis, and data automation.

Processing a wafer using a double side grinder having a pair of grinding wheels. Warp data is obtained by a warp measurement device for measuring warp of a wafer as ground by the double side grinder. The warp data is received and a nanotopography of the wafer is predicted based on the received warp data. A grinding parameter is determined based on the predicted nanotopography of the wafer. Operation of the double side grinder is adjusted based on the determined grinding parameter.

Processing a wafer using a double side grinder having a pair of grinding wheels. Warp data is obtained by a warp measurement device for measuring warp of a wafer as ground by the double side grinder. The warp data is received and a nanotopography of the wafer is predicted based on the received warp data. A grinding parameter is determined based on the predicted nanotopography of the wafer. Operation of the double side grinder is adjusted based on the determined grinding parameter.

An object of the present invention is to provide at a relatively cheap price a wire saw device capable of effectively preventing slurry from splashing onto the top surface of a work and effectively suppressing increase in nanotopography and Warp. The wire saw device 1 of the present invention has: a group of multiple wires 4 formed by suspending a wire 3 over a set of rollers 2, 2, 2 separate from each other so as to be aligned in a cutting side thereof in parallel to one another in the roller shaft direction X and capable of running in a direction orthogonal to the roller shaft direction; a work holding portion 5 for holding a work W and moving the work W in a direction of pushing the work W with respect to the group of multiple wires 4; and a nozzle 6 for supplying slurry to the group of multiple wires 4 from at least a position on the upperstream side in the running direction of the multiple wires 4, with respect to a path along which the work W is pushed into the wire 3. Further, the wire saw device 1 is provided with a slurry blocking plate 7, extending in the direction along which the multiple wires 4 are aligned in parallel to one another, and pivotably fixed at a base point located at least on the side at which the nozzle 6 is provided and above the multiple wires 4, such that the slurry blocking plate 7 falls, around the base point, on the work W in the direction of pushing the work W with respect to the multiple wires 4.

A system for the integrated archiving, restoring, purging, importing and exporting of semiconductor wafer data, the system including a data acquisition system for acquiring scan data from differing types of semiconductor wafer scanning tools such as wafer dimensional tools, wafer inspection tools, and wafer nanotopography tools, a buffer system for providing temporary storage for scan data transmitted over a network from the data acquisition system and for providing fault tolerance, a server system for providing storage for the scan data transmitted from the buffer system and converting the scan data into a format used by and stored in a database management system; and an analysis system client station including a display and communicating with the server system over the network, the analysis system and the server system managing the purging, archiving, restoring, importing and exporting of scan data.

The invention provides a nano oxide based on metal-organic frameworks (MOFs) and a preparation method thereof, which belong to the technical field of new materials. Metal nitrate is used for reaction to obtain a metal-organic framework, an alkaline solution is used for treatment, a precursor obtained after treatment is further subjected to pyrolysis to obtain a target product. The method succeeds in getting rid of multiple restrictions on the material itself when the traditional metal-organic framework pyrolysis method is used for preparing a metallic oxide. According to the alkaline hydrolysis process provided by the method, the morphology of the nano material of the synthetic material can be controlled more effectively to enhance the capacity of the capacitor, an organic carboxylate ligand used in the case of synthesis of a crystalline material can be effectively recovered, and the cost for material synthesis is greatly reduced. A new through is provided when the conventional MOFs material is used for synthesizing a metallic oxide with a specific nano morphology and a nano size, and an important role is played in expansion of industrial production of a synthesized material with excellent capacitance performance.

A method is provided for making a high repellency material. In one embodiment the method includes the steps of providing a polymeric material having an external surface including particle-like nanotopography, etching the external surface with a high energy treatment; and depositing a fluorochemical onto the etched external surface by a plasma fluorination process.

Disclosed are composite microneedles arrays including microneedles and a film overlaying the microneedles. The film includes a plurality of nano-sized structures fabricated thereon. Devices may be utilized for interacting with a component of the dermal connective tissue. A random or non-random pattern of structures may be fabricated such as a complex pattern including structures of differing sizes and / or shapes. Devices may be beneficially utilized for delivery of an agent to a cell or tissue. Devices may be utilized to directly or indirectly alter cell behavior through the interaction of a fabricated nanotopography with the plasma membrane of a cell and / or with an extracellular matrix component.

The invention provides a preparation method of bimetal nano hydroxide and oxide with a hollow nano cage structure based on a metal-organic framework and a performance of a supercapacitor made of the bimetal nano hydroxide and oxide, and belongs to the technical field of new materials. The method comprises the steps: carrying out metal nitrate treatment on prepared ZIF-67, and further carrying outhypophosphite treatment to obtain the target product. The method is simple and convenient to operate, and high energy consumption caused by pyrolysis and other methods is avoided. In addition, the method can well control the morphology of a nano material to improve the capacity of a capacitor. According to the method, common MOFs are used as precursors to synthesize a bimetal nano hydroxide and oxide compound with specific nano morphology, and the synthesized nano material is applied to a capacitor electrode material, so that the method is further put into actual industrial production.

A susceptor configured to receive a semiconductor wafer for deposition of a layer on a front surface of the semiconductor wafer by chemical vapor deposition (CVD) has a gas-permeable structure with a porosity of at least 15%, a density of from 0.5 to 1.5 g / cm3, a pore diameter of less than 0.1 mm and an internal surface area of the pores which is greater than 10,000 cm2 / cm3. Semiconductor wafers having front surface coated by chemical vapor deposition (CVD) and a polished or etched back surface, prepared using the gas-permeable susceptor, have a nanotopography of the back surface, expressed as the PV (=peak to valley) height fluctuation, of less than 5 nm, and at the same time the halo of the back surface, expressed as haze, is less than 5 ppm.

The present invention provides a method for evaluating nanotopography of a surface of a semiconductor wafer sliced from a semiconductor ingot, the method being conducted prior to polishing of the surface, the method at least comprising: measuring a surface profile of the wafer in the direction that the wafer is sliced; determining a maximum inclination value of warp change of the wafer surface in a sectional profile in the direction that the wafer is sliced of the measured surface profile; and estimating nanotopography of the wafer surface after being polished based on the determined maximum value. As a result, there are provided a method and an apparatus for evaluating nanotopography of a surface of a semiconductor wafer, and a method for manufacturing a semiconductor wafer exhibiting good nanotopography level on the surface.

The invention discloses a bismuth tungstate nano-film with photocatalytic performance as well as a preparation method and application thereof. The bismuth tungstate nano-film comprises an underlayer and a bismuth tungstate nanolayer grown on the underlayer and consisting of a bismuth tungstate nano-structure, wherein the underlayer is fluorine-doped tin oxide conductive glass. The preparation method comprises the following steps: adopting potassium iodide and bismuth nitrate as raw materials, fluorine-doped tin oxide conductive glass as a working electrode, a platinum plate electrode as a counter electrode, and a silver / silver chloride electrode as a reference electrode, and performing ion exchange, calcining and other steps to obtain the bismuth tungstate nano-film. The bismuth tungstate nano-film can be used for photocatalytic water-splitting hydrogen production in a photoelectrochemical tank, has the nanotopography of a one-dimensional nanosheet with a large specific surface area and also has the visible-light photocatalytic water-splitting hydrogen production activity. The preparation method is simple in operation process, mild in reaction condition, short in reaction time and strong in operation controllability.

A method for slicing an ingot may improve nanotopography at a surface of a wafer. In the method, an ingot is sliced into a plurality of wafers via a slurry while slurry is supplied to a moving wire. A first wire to form a first slicing portion at the wafer firstly slices one side of the ingot. A second wire secondly slices the remaining portion of the ingot to form a second slicing portion continued from the first slicing portion, wherein the first wire has a smaller diameter than that of the second wire.

A new titanium-based implant is disclosed, which is formed by a titanium coating manufactured with biomaterials with applications in osseous implantology. The nanotopographical characteristics of these implants inhibit bacterial adhesion and the formation of a bacterial biofilm on the surface, whilst simultaneously presenting suitable properties for the adhesion, stretching and proliferation of bone-forming cells. Moreover, the invention comprises a method for manufacturing the implant by means of oblique-incidence techniques and the use thereof in osseous implantology.

The present invention is a double-headed grinding device having a ring-shaped holder which is rotatable for supporting a thin-plate workpiece from the outer periphery along the radial direction, and a pair of grindstones for grinding both surfaces of said workpiece simultaneously as said workpiece is supported by said ring-shaped holder. Said double-headed grinding device is characterized in that it is provided with a hydrostatic bearing for supporting said ring-shaped holder in a non-contact fashion by means of the static pressure of liquid delivered from both the rotation axis direction of said ring-shaped holder and the direction perpendicular to said rotation axis, and in that the pressure force for delivering the liquid from the rotation axis direction and the pressure force for delivering the liquid from the direction perpendicular to said rotation axis can be controlled independently. Accordingly, a double-headed grinding device and a method for double-headed grinding of workpieces are provided in which improvement is achieved in the dispersion of nanotopography that is generated depending on the grinding wheel, workpiece lots, and so forth, such that stable and highly accurate nanotopography can be obtained every time grinding is performed.

A workpiece double-disc grinding apparatus including a holder that supports a thin-plate-like workpiece from an outer periphery along a radial direction and is rotatable; a pair of static pressure support members that support the holder from both sides along an axial direction of the rotation thereof in a contactless manner based on a static fluid pressure; and a pair of grinding stones that simultaneously grind both surfaces of a workpiece supported by the holder, in which an interval between the holder and the static pressure support member is not greater than 50 μm, and the static pressure of the fluid that is not lower than 0.3 MPa. As a result, the workpiece double-disc grinding apparatus and a workpiece double-disc grinding method can stabilize a position of the holder, which can be a cause that degrades a nanotopography of the workpiece in the double-disc grinding for the workpiece.

The invention discloses a copper metal organic framework (Cu-MOFs) mimic enzyme material as well as preparation and application thereof. The nanotopography of the copper metal organic framework mimicenzyme material is in a flake shape. The Cu-MOFs mimic enzyme material can be prepared by the following steps: dissolving cupric nitrate into N,N-dimethylformamide to obtain a solution A and dissolving 5-nitroisophthalic acid into the N,N-dimethylformamide to obtain a solution B; adding the solution A and methanol into the solution B under the stirring condition, stirring for 20 to 40 minutes, putting a stirred solution in a reactor, and carrying out thermostatic reaction at the temperature of 70 to 80 DEG C for 48 to 72 hours; after the reaction is ended, centrifugally separating, washing, and then drying at 60 DEG C for 12 to 24 hours to obtain a flaky Cu-MOFs mimic enzyme material; dispersing the flaky Cu-MOFs mimic enzyme material into water to obtain a Cu-MOFs mimic enzyme solution. The material has excellent activity of mimetic peroxidase; compared with natural horse radish peroxidase (HRP), the material has the advantages of simple preparation process, low cost, good adaptability and the like; the material can be used as a substitute of the HRP, and has potential application value in aspects of bioinstrumentation, immunoassay and clinical diagnosis.

The invention relates to a method for preparing a TiO2 / Ta2O5 composite coating with a special micro nano structure. The method utilizes a plasma spraying technology, changes chemical compositions of the TiO2 coating by doping Ta2O5, simultaneously regulates and controls nanotopography of the composite coating for reinforcing cell viability of the TiO2 coating and belongs to the field of medical biological ceramic coatings. The method comprises the following steps: firstly, TiO2 / Ta2O5 composite powder for spraying is prepared by adopting a planetary ball-milling mixing method; secondly, the TiO2 / Ta2O5 composite coating is prepared by adopting an atmospheric plasma spraying method; testing the polarization curve of the TiO2 / Ta2O5 composite coating in simulated body fluid and investigating corrosion resistance in the simulated body fluid. The TiO2 / Ta2O5 composite coating with the micro nano structure, which is prepared by the method, is beneficial to improvement of biological activity of the ceramic coating of an implant and improvement of combination of bone tissue and the coating and can be used as a novel bioactive bone replacement material.

A susceptor for a semiconductor wafer to be placed on during deposition of a layer on a front surface of the semiconductor wafer by chemical vapor deposition (CVD), has a gas-permeable structure with a porosity of at least 15% and a density of from 0.5 to 1.5 g / cm3. There is also a semiconductor wafer having a back surface and a front surface which has been coated by chemical vapor deposition (CVD) and a polished or etched back surface. The nanotopography of the back surface, expressed as the height fluctuation PV (=peak to valley), is less than 5 nm. There is a process for producing the semiconductor wafer.

The present invention provide methods for preparing nanostructured membranes. The methods include: providing a substrate with a charged silanized surface; forming a multilayered membrane containing at least two polyelectrolytes; inducing polyelectrolyte phase separation; crosslinking the multilayered membrane; and covalently linking the multilayered membrane to the silanized surface. Methods for fabricating membrane replicas are also disclosed, as well as devices such as cell- and tissue-culture substrates that contain the membranes and membrane replicas. Resulting materials exhibit topographic features and compliance of the extracellular matrix in vivo.

The present invention provides a method of improving nanotopography of a surface of a wafer sliced from an ingot by using a wire saw apparatus, including improving straightness of feed of a work feed table which is included in the wire saw apparatus and used for feeding the ingot to a wire row formed by winding a wire around a plurality of rollers, and also provides a wire saw apparatus for slicing an ingot to manufacture a wafer, including: a wire row formed by winding a wire around a plurality of rollers; a work feed table for holding and feeding the ingot to the wire row; and a linear-motion guide for linearly guiding the work feed table, wherein a component having a wavelength of 20 to 200 mm in straightness of feed of the work feed table satisfies a PV value ≦1.0 μm. As a result, there are provided the method of eliminating slice waviness having periodicity to improve the nanotopography of the surface of the wafer and the wire saw apparatus.