The invention relates to a terahertz sensor, in particular to a
graphene nanoribbon array terahertz sensor based on optical
waveguide. The
graphene nanoribbon array terahertz sensor comprises a bottom grid, a low-resistivity
silicon substrate, a lower
insulation layer, a
graphene nanoribbon array, a source leak
electrode, an upper
insulation layer, a top grid, an optical
waveguide structure, an incidence
coupling raster, an emitting
coupling raster and a
driving circuit, wherein the lower
insulation layer, the graphene nanoribbon array, the source leak
electrode, the upper insulation layer, the top grid, the optical
waveguide structure, the incidence
coupling raster, the emitting coupling raster and the
driving circuit are arranged on the substrate; the graphene materials have the photoelectric characteristics of high carrier mobility, electronic scattering-free transmission and adjustable energy gap and adopt the graphene nanoribbon and p-i-n photoelectric detecting structure. By means of characteristics of collection, transmission and gathering of the optical waveguide, and the
composite structure of the large-area optical waveguide and the graphene nanoribbon array is designed. The terahertz sensor has the advantages of high
light energy utilization rate, high sensitivity, fast response, simple operation and structure at the
room temperature, convenience in integration and small size, can be widely applied to the fields of
security check,
drug smuggling investigation, counter terrorism,
medical imaging,
nondestructive testing, electronic countermeasures,
radar,
remote sensing,
outer space wideband communication and the like.