36 results about "Directed crystallization" patented technology

The invention discloses a method for preparing an ordered-structure porous polymer material by using a directional crystallization technology and using a polymer solution as a precursor, wherein dimethyl sulfoxide is used as a solvent of the polymer solution. The method comprises the following steps: adding different polymers into dimethyl sulfoxide, and forming the polymer solution by stirring at a certain temperature; transferring the polymer solution to a square mould, contacting one side of the mould with low temperature, placing in a drying oven after directionally crystallizing the solution, and drying the obtained material to obtain the ordered-structure porous polymer material. The preparation method is simple and feasible, green and environment-friendly, and wide in applicable range, the aperture is 10-30 microns, and the preparation method is a general for preparing the ordered-structure porous polymer material.

The invention provides an organic compound adiabatic cooling crystallization method and device capable of reducing operation cost and equipment cost. In the crystallization tank 20, the target organic compound containing the refrigerant is subjected to adiabatic cooling and evaporation of the refrigerant, and the crystallization slurry generated by this operation is taken out from the crystallization tank 20; operating above pressure and directing it into the absorption condenser 10; in the absorption condenser 10 the pressurized steam is cooled and condensed while remaining in contact with the solution of the organic compound; the liquid from this absorption condensation is finally directed to crystallization slot 20.

The invention discloses a method for preparing a large-size Ce,Nd: YAG crystal based on a transverse translation crystallization method. The method comprises the following nine specific technologicalprocedures: burdening, charging into a furnace, vacuumizing and inflating, heating, seeding, shouldering growth of crystals, equal-width growth of the crystals, cooling and in-situ annealing, and taking-out of the crystals. The transverse translation crystallization method is utilized in the invention, the advantages of a directional crystallization method and a vertical zone melting method are achieved at the same time, and the prepared Ce,Nd: YAG crystal has the advantages of low cost, short growth period, high crystal quality, good product uniformity, no core side center, high product utilization rate and the like.

The invention discloses a germanium reduction directional crystallization furnace and a crystallization method. The crystallization furnace comprises a shell, a feeding pipe, a discharging pipe, a heating pipe and a propelling mechanism. A feeding port is formed in one end of the shell, a discharging port is formed in the other end of the shell, a hydrogen inlet is formed in the discharging port of the shell, and igniters are arranged at the feeding port and the discharging port of the shell. The feeding pipe is arranged in one end of the shell and connected with the feeding port, and the discharging pipe is arranged in the other end of the shell and connected with the discharging port. A hydrogen inlet is formed in the pipe wall of the feeding pipe, and a graphite boat is arranged in thefeeding pipe. A hydrogen inlet is formed in the pipe wall of the discharging pipe, and the discharging pipe is sleeved with a water cooling sleeve. The heating pipe is horizontally arranged in the shell, one end of the heating pipe is connected with one end of the feeding pipe, and the other end of the heating pipe is connected with one end of the discharging pipe. The propelling mechanism is arranged at the end, provided with the feeding port, of the shell. Reduction heat energy is fully utilized, germanium melting and crystallization are conducted at the same time, reduction and germanium ingot purification are organically combined, operation is convenient, and the structure is designed to be compact.

The invention belongs to the field of preparation of indium phosphide single crystals, and particularly discloses a method for growing indium phosphide single crystal by a VGF method. The method comprises the steps of putting raw materials into a crucible and assembling a single crystal growth furnace by adopting the VGF method, and carrying out high-temperature annealing treatment; raising the temperature of the melt, and setting a heating target value in a heating control program for heating and pressurizing; carrying out seed melting growth, setting a growth temperature, when the melting length of the seed crystal reaches 10-15mm and the rotating shoulder growth is carried out, enabling the position of the crucible to begin to descend with the descending speed being not greater than 2.5 mm / h, and automatically stopping the descending of the crucible position after the growth is finished; and conducting cooling and annealing, specifically, automatically conducting cooling and annealing after growth is finished, emptying air pressure in the furnace after the temperature is reduced to 350 DEG C, opening a furnace door after the temperature in the furnace is reduced to about 150 DEG C, and obtaining the single crystal. According to the invention, the pulling speed method is added, so that the thermal field of the indium phosphide single crystal in the growth process is more uniform, vertical orientation crystallization is more stable, more indium phosphide single crystals grow, and the qualified rate of the crystal is higher.

The invention discloses a device and a method for machining high-density aluminum oxide by plasma, and belongs to the technical field of high-density aluminum oxide for sapphire crystals. The device is characterized in that a radio frequency plasma generator (8) and a plasma torch (10) are arranged below a feed hopper, a high-frequency induction coil (7) is wound outside the plasma torch (10), a deposition platform (12) for receiving materials is arranged below the plasma torch (10), and aluminum oxide powder is fed by the feed hopper, instantly melted in the process of falling in the plasma torch (10), solidified in a directional crystallization manner on the deposition platform (12) to obtain the high-purity high-density aluminum oxide. By the aid of the device and the method, the high-purity aluminum oxide cannot be polluted, parts of impurities in the aluminum oxide can be volatilized under the action of high-temperature plasma, and the aluminum oxide is further purified. Continuous process can be kept, production efficiency is accelerated, and the stable performance of the aluminum oxide can be kept.

A flexible organic light emitting diode display and manufacturing method thereof are provided. The method includes: performing a first patterning process on an amorphous silicon film; performing a crystallization treatment on the amorphous silicon film which has been processed by the first patterning process to form an oriented crystalline polycrystalline silicon film; performing a second patterning process on the polycrystalline silicon film to form a channel; and sequentially forming a gate, a source, a drain, an OLED display layer, and a packaging layer over the channel.

The invention relates to a method for determining eutectic point components in a multi-element alloy phase diagram, and belongs to the technical field of alloy materials. The method comprises the steps of uniformly mixing materials of two or more high-purity alloy elements, heating in a protective gas atmosphere until the materials are completely molten to obtain a multi-element alloy melt, and directionally crystallizing the multi-element alloy melt to obtain a crystal phase and a multi-element eutectic alloy; and cutting and separating the crystal phase and the multi-element eutectic alloy to obtain the multi-element eutectic alloy material, and analyzing the components of the multi-element eutectic alloy material, namely the eutectic point components in the multi-element alloy phase diagram. According to the method, the proportion of materials of high-purity alloy elements does not need to be controlled, the multi-element eutectic alloy or the eutectic high-entropy alloy is designed without relying on thermodynamic data, and the eutectic point components in the multi-element alloy phase diagram are directly determined without relying on thermodynamic data.

The invention discloses a cartilage extracellular matrix and silk fibroin composite orientation cartilage support and a preparation method thereof and belongs to the biological tissue engineering technology. According to the cartilage extracellular matrix and silk fibroin composite orientation cartilage support and the preparation method of the cartilage support, cartilage extracellular matrixes are prepared through articular cartilage of people, pigs, cows or sheep, silk fibroin is prepared through mulberry silk, after the cartilage extracellular matrixes and the silk fibroin are evenly mixed according to a specific proportion, directed crystallization is performed under a certain temperature, ultraviolet cross linking is firstly performed after freezing and drying, and then cross linking of carbodiimide and N-hydroxysuccinimide or glutaraldehyde and genipin is performed so that the cartilage extracellular matrix and silk fibroin composite orientation cartilage support can be prepared. Due to the design, biocompatibility is good, and immunological rejective reaction is avoided; a composition structure and mechanical properties are similar to those of cartilage extracellular matrixes of people; material sources are wide, cost is low, the preparation technology is simple, the cartilage extracellular matrix and silk fibroin composite orientation cartilage support can be used for constructing tissue engineering cartilage and repairing cartilage degradation, and clinical application prospects are good.

A monocrystal and orientational cylindrical crystal combined blade used for gas turbine features that its middle region is orientational cylindrical crystals and its gas inlet and outlet edges have monocrystal form. Its manufacture method includes such steps as installing a composite crystallizer to the crystallizer of orientational crystallizing furnace, smelting by 100-150 of overheat, regulating the temp of mould heater to 1500-1530 deg.C for upper region and 1550-1580 deg.C for lower region, casting, and moving mould downward at 5-7 mm / S.

A method for preparing Fe-Ga-In-Tb alloy rods by deep supercooling through ceramic filtration, using a new Fe-Ga-In-Tb giant magnetostrictive alloy composition system to overcome the difficulty of melting iron-gallium binary composition alloys Disadvantages: For the first time, a nanoporous ceramic filter is used to filter the alloy melt to improve the purity of the Fe-Ga-In-Tb melt, so that the alloy melt is deeply supercooled, and then the alloy is heated again to make the alloy liquid through the deep subcooling directional crystallization system Metals stimulate directional crystal growth. The alloy bar prepared by the invention has smooth surface, high degree of orientation, precise and uniform composition, and good comprehensive performance.