32 results about "Cathode bias" patented technology

Cleaning of an ion implantation system or components thereof, utilizing temperature and / or a reactive cleaning reagent enabling growth / etching of the cathode in an indirectly heated cathode for an ion implantation system by monitoring the cathode bias power and taking corrective action depending upon compared values to etch or regrow the cathode.

A technique improving performance and lifetime of indirectly heated cathode ion sources is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for improving performance and lifetime of an indirectly heated cathode (IHC) ion source in an ion implanter. The method may comprise maintaining an arc chamber of the IHC ion source under vacuum during a maintenance of the ion implanter, wherein no gas is supplied to the arc chamber. The method may also comprise heating a cathode of the IHC ion source by supplying a filament with a current. The method may further comprise biasing the cathode with respect to the filament at a current level of 0.5-5 A without biasing the arc chamber with respect to the cathode. The method additionally comprise keeping a source magnet from producing a magnetic field inside the arc chamber.

A fuel cell system configured to generate an electric power by supplying an anode gas and a cathode gas to a fuel cell includes: a connection line configured to connect the fuel cell to an electric load; a converter connected to the connection line and a battery, the converter being configured to adjust a voltage of the connection line; a target output current calculating unit configured to calculate a target output current of the fuel cell in accordance with a load of the electric load; a converter control unit configured to carry out a switching control for the converter in accordance with the target output current; and a flow rate control unit configured to control a flow rate of the cathode gas to be supplied to the fuel cell in accordance with the target output current. The target output current calculating unit sets up an upper limit to the target output current on the basis of a generated electric power of the fuel cell and a guaranteed minimum voltage of the connection line for ensuring performance of the fuel cell and the electric load.

Cleaning of an ion implantation system or components thereof, utilizing temperature and / or a reactive cleaning reagent enabling growth / etching of the cathode in an indirectly heated cathode for an ion implantation system by monitoring the cathode bias power and taking corrective action depending upon compared values to etch or regrow the cathode.

The invention relates to a fuel cell metal dual pole plate assembly for enhancing the fluid uniformity. The assembly is formed by connecting a single negative plate and a single positive plate, wherein the single negative plate and the single positive plate are prepared from metal sheets and have runners with different heights. After connection, sealing members are installed in sealing grooves on two sides of the two pole plates. Cathode gas, anode gas, and coolant can enter into / exit from corresponding flow fields from respective main pipelines through a direct connection channel. The heights of runners in the cathode and anode flow field reaction zones both decrease along the flowing direction of the cathode gas and anode gas. Compared with the prior art, the provided assembly can compensate the gas loss so as to avoid uneven gas distribution; the electrochemical reaction activity in a fuel cell is improved therefore, and moreover, the flowing speed of reaction gas in the flow field outlet area is accelerated so that the generated liquid water in the air runner can be discharged in time when the fuel cell is in a high current density state.

A method of electroplating a metal on a cathodically biased wafer substrate employs an electroplating apparatus having a main anode, an auxiliary electrode and an ionic current collimator, where the ionic current collimator is configured to direct ionic current that is generated by the main anode from a periphery of a plating vessel to its center. During electroplating, in a first electroplating stage (e.g., when terminal effect is pronounced), the metal is plated onto the wafer while the auxiliary electrode is cathodically biased; and in a second electroplating stage (e.g., when terminal effect subsides), the metal is plated onto the wafer while the auxiliary electrode is anodically biased. In some embodiments the auxiliary electrode is located between the ionic current collimator and the wafer, and is configured to redistribute ionic current that has passed through the collimator. The method is useful for improving the uniformity of electroplating.

A power amplifier circuit includes a first amplifier that amplifies a first RF signal and outputs a second RF signal, a second amplifier that amplifies the second RF signal and outputs a third RF signal, a bias circuit that supplies a bias current or voltage to the first or second amplifier, and a bias adjustment circuit that adjusts the bias current or voltage on the basis of the first RF signal, the second RF signal, or the third RF signal. The bias adjustment circuit includes a first diode having an anode to which a control signal indicating a signal based on the first, second, or third RF signal is inputted, and a cathode connected to a ground. The bias circuit includes a bias transistor that outputs the bias current or voltage on the basis of a voltage at the anode of the first diode.

A method of manufacturing a sliding bearing comprising providing a substrate as a cathode in an electrolyte within which a hard particulate is suspended, and depositing a composite layer of hard particulate embedded in a metallic matrix by applying a repeating cycle of bias pulses to the substrate wherein each cycle comprises a high cathodic bias portion and a further bias portion selected from the group consisting of a low cathodic bias portion, a zero cathodic bias portion and an anodic bias portion, and a sliding bearing manufactured by such a method.

The invention discloses a cathode bus-bar configuration method of an ultra-large aluminum electrolytic cell. The total quantity of end compensating current is rated and cell bottom bus-bars adopt alternate compensation for offset, that is, the total current quantity flowing through a flue end is controlled within 100-150 kA, the current quantity of an aluminum discharge end is controlled within 80-120 kA, and the rest current on the A side bypasses the multiple cell bottom bus-bars. The routing manner of cathode bus-bars is designed accordingly, and specific parameters of cathode bus-bars of the electrolytic cell, independent compensation bus-bars, cell spacing and plant spacing are determined according to the calculated result of a magnetic fluid model. With the adoption of the cathode bus-bar configuration method of the ultra-large aluminum electrolytic cell, basic configuration of the bus-bars of the ultra-large aluminum electrolytic cell can be determined quickly, the vertical magnetic field and the horizontal magnetic field of melt can be effectively reduced, uniform distribution of the magnetic fields in the long axis direction of the cell is realized, stable operation of the aluminum electrolytic cell is realized, and the current efficiency of the electrolytic cell is improved.

In a CRT display device equipped with a CRT (MM tube) that is brighter than conventional CRTs, image noise in low-brightness areas is made inconspicuous while improving contrast. The image signal modulation circuit 10 converts the image signal 9 (first image signal) into a second image signal in which the signal level of a low-tone area is suppressed lower than that of the first image signal. As a result, since the cathode bias voltage source 7 generates the drive voltage based on the second image signal, the drive voltage in the low-tone area is kept low, and the brightness of the low-tone area in the CRT 1 becomes low. Therefore, the image noise in the low-brightness part is made inconspicuous, and the contrast value is increased to improve the display quality.

The invention provides a laser drive circuit and a light emitting system. According to the circuit, an anode input transistor and a cathode input transistor receive differential input signals, and are grounded through a first current source after the source ends are connected; a direct-current working point matching module is connected with the drain ends of the anode input transistor and the cathode input transistor and is used for matching direct-current working points, so that the currents flowing through the anode input transistor and the cathode input transistor are equal; the gate endof an anode load transistor is connected with an inverting input signal and an anode bias signal; and the gate end of a cathode load transistor is connected with a normal-phase input signal and a cathode bias signal. According to the invention, a source follower is used as an output load, so that waste of power consumption is avoided; the contradiction between low power consumption and large bandwidth is broken through; and an anode bias loop and a cathode bias loop are adopted for bias, so that direct-current working points are matched; and the precision of bias current output to a light-emitting diode is further ensured.

The present invention relates to a semiconductor device, a power conversion device, a drive device, a vehicle, and an elevator. The semiconductor device of the embodiment includes: a first diode having a first anode and a first cathode, and the first anode is used in connection with the first electrode and the second electrode of the semiconductor element having the first electrode, the second electrode and the gate electrode. Any one of them is electrically connected; a first capacitor has a first end and a first other end, and the first end is electrically connected to the first cathode; a bias element has a first bias element end and a second bias element end , the end of the first bias element is electrically connected to the first cathode and the first end, and the end of the second bias element is used to electrically connect with the positive pole of the DC power supply having the positive pole and the negative pole; the second diode has the second anode and the The second cathode, the second anode is electrically connected to the first other end; the second capacitor has the second end and the second other end, the second end is electrically connected to the second cathode; the switch is electrically connected to the second capacitor in parallel Between one end of the second end and the other end of the second; an analog-to-digital converter or a sample-and-hold circuit electrically connected to the second cathode and the second end; a third diode having a third anode electrically connected to the other end of the second, and connected to the second end. The third cathode electrically connected to the other end of the first and the second anode.

The present invention relates to temperature and / or reactive cleaning by utilizing the temperature and / or reactive cleaning of a cathode capable of growing / etching an indirectly heated cathode in an ion implantation system by monitoring the cathode bias power and taking corrective action depending on the comparison value Reagents are used to etch or regrow the cathode to clean an ion implantation system or components thereof.

The invention discloses a bus configuration method for an aluminum electrolysis cell with equidistant current paths. A bus of an electrolysis cell (7) comprises a cathode soft bus (1), a current inlet side cathode bus (2), a cell bottom through bus (3), a cell side bus (4), a current outlet cathode bus (5) and downstream cell column buses (6), wherein 50% of current in the electrolysis cell flows out through the cathode soft bus (1) at the current inlet side, respectively flows into the current inlet side cathode bus (2) or the cell bottom through bus (3), and respectively converges into the four downstream cell column buses (6) through the cell side bus (4); and 50% of current also flows out through the cathode soft bus (1) at the current outlet side, and respectively converges into the four downstream cell column buses (6) through the current outlet cathode bus (5). A large cross section is adopted in the current inlet side cathode bus and the cell side bus of the electrolysis cell, and a small cross section is adopted in the current outlet side cathode bus of the electrolysis cell. According to the bus configuration method disclosed by the invention, stable electrolysis cell production process and higher current efficiency are guaranteed by adopting current path equidistance bus configuration and changing the cross section and current quantity of the bus.

In a CRT display device including a CRT (MM tube) having brightness higher than that in the background-art CRT, it is an object of the present invention to improve contrast and prevent conspicuous recognition of noises. A video signal modulation circuit (10) modulates a video signal (9) (first video signal) into a second video signal having a signal level in an area of low gradation level lower than a signal level of the first video signal. A cathode bias voltage source (7) generates a driving voltage on the basis of the second video signal. It is therefore possible to keep the driving voltage in the area of low gradation level low and reduce brightness in the area of low gradation level of a CRT (1). As a result, noises of an image in the area of low gradation level are not conspicuously recognized and a contrast value is increased, resulting in improvement in image quality.

The invention relates to a titanium alloy ultrasonic knife surface strengthening method which comprises the following steps: (1) machining the titanium alloy ultrasonic knife surface, grinding and polishing; (2) cleaning the titanium alloy ultrasonic knife which satisfies the surface roughness requirement, and drying; (3) putting the titanium alloy ultrasonic knife into an ion nitriding furnace, and carrying out nitriding treatment, wherein the nitriding treatment technological parameters are as follows: the pole pitch is 30-50mm, the cathode bias is less than or equal to 300V, the inside of the ion nitriding furnace is subjected to argon gas scrubbing for oxygen removal and vacuumized to the vacuum pressure of less than 5Pa, the gas medium filled in the ion nitriding furnace is NH3, the gas flow rate is 300-400 L / h, the nitriding pressure is 80-120Pa, the nitriding temperature is 800-1000 DEG C, and the nitriding time is 3-7 hours; and after the nitriding treatment is finished, carrying out furnace cooling on the titanium alloy matrix in an argon environment to room temperature, and discharging. Compared with the prior art, after the treatment of the technique, the hardness is enhanced by 2-3 times as compared with the titanium alloy matrix which is not subjected to ion nitriding treatment, and the abrasion resistance is enhanced by 8-25 times. The titanium alloy ultrasonic knife surface treated by the method has the characteristics of high abrasion resistance, high oxidation resistance and favorable high-temperature stability.