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612results about How to "Ensure performance" patented technology

Method of epitaxial growth effectively preventing auto-doping effect

This invention relates to a method of epitaxial growth effectively preventing auto-doping effect. This method starts with the removal of impurities from the semiconductor substrate having heavily-doped buried layer region and from the inner wall of reaction chamber to be used. Then the semiconductor substrate is loaded in the cleaned reaction chamber to be pre-baked under vacuum conditions so as to remove moisture and oxide from the surface of said semiconductor substrate before the extraction of the dopant atoms desorbed from the surface of the semiconductor substrate. Next, under high temperature and low gas flow conditions, a first intrinsic epitaxial layer is formed on the surface of said semiconductor substrate where the dopant atoms have been extracted out. Following this, under low temperature and high gas flow conditions, a second epitaxial layer of required thickness is formed on the structural surface of the grown intrinsic epitaxial layer. Last, silicon wafer is unloaded after cooling. This method can prevent auto-doping effect during the epitaxial growth on semiconductor substrate and thus ensure the performance and enhance the reliability of the devices in peripheral circuit region.
Owner:SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI

Projection exposure apparatus and method

Pattern transfer can be performed with improved exposure accuracy, by reducing the contamination caused by the attachment of a photosensitive agent or the like on an optical member of a projection optical member or the like. The pattern transfer onto a substrate W is performed after cleaning the objective member OB disposed at a given position by a cleaning device 8 at the time when pattern transfer is not performed, or while making flow a gas in a space between the substrate W and the optical member OB by a contamination protection device 98. Alternatively, the optical member OB disposed at a given position is inspected for contamination by a contamination inspection device 84 at the time when pattern transfer is not performed, and the pattern transfer or the cleaning or replacement of the optical member is performed based on the result.
Owner:NIKON CORP

Airtight RF coaxial connector with self-locking by snap-fastening

An airtight RF coaxial connector with self-locking by snap-fastening is disclosed. The front end of the plug outer conductor is in the shape of continuous circles, forming an overall ring; the front end of the plug outer conductor is provided with a ring-shaped bulge with right angle trapezoid shaped cross section, the hypotenuse of the trapezoid being faced with the front side of the socket connector, and the right angle side of the trapezoid being positioned normal to the longitudinal axis of the socket connector on the back side of the connector; the inner part of the socket connector is provided with a groove provided with a sealing ring; and the distance between the mid-point of the ring bulge and the front contact surface of the plug outer conductor corresponds to that between the mid-point of the groove and the front contact surface of the socket connector. The abolishment of the four-way slits at the front end of the plug outer conductor not only increases the stiffness of the outer conductor, but also decreases the leakage of RF. When the connector is in connection, the conical surface of the plug outer conductor will automatically extrude the sealing ring on the inner side of the socket outer conductor so as to realize ideal sealing effects.
Owner:QU JINLIANG +1

Semiconductor device and method of manufacturing the same

InactiveUS20140048918A1Increase lifespanSuppress and prevent of crackSemiconductor/solid-state device detailsSolid-state devicesEngineeringElectrical conductor
A semiconductor device has a connection structure in which a power semiconductor chip is mounted on an insulating substrate having conductor patterns bonded to front and rear surfaces thereof, and the insulating substrate is connected to a heat-dissipating base member to dissipate heat generated from the power semiconductor chip to outside. The conductor pattern on the rear surface bonded to the heat-dissipating base member has a bonding portion having a rectangular shape and a predetermined curvature radius in vicinity of corners.
Owner:FUJI ELECTRIC CO LTD
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