The invention relates to a preparation method of an Ag-SiO2 high-
reflectivity solar film surface reflecting material. The preparation method comprises the steps of 1, cleaning a substrate, wherein ultrasonic cleaning is conducted for 10-20 minutes in absolute ethyl
alcohol, deionized water cleaning is conducted, the substrate is soaked in a cleaning solution for 10-20 minutes, deionized
water washing is conducted, and the substrate is blown to be dry for use; 2, preparing an Ag film, wherein a
radio frequency magnetron
sputtering method is adopted, high-purity
argon serves as
sputtering gas, the base vacuum degree ranges from 6*10<-4> Pa to 6.2*10<-4> Pa, the
working pressure ranges from 0.5 Pa to 0.8 Pa, the target-substrate distance is fixed to be 70-80 mm, the flow rate of the
argon ranges from 20 sccm to 25 sccm, the
sputtering power of Ag ranges from 38 W to 42 W, the sputtering
voltage ranges from 0.3 KV to 0.4 KV, and the current ranges from 0.1 A to 0.15 A; and 3, preparing a SiO2 film, wherein the
radio frequency magnetron sputtering method is adopted for preparation, the high-purity
argon serves as the sputtering gas, the base vacuum degree ranges from 6*10<-4> Pa to 6.2*10<-4> Pa, the
working pressure ranges from 0.5 Pa to 0.8 Pa, the target-substrate distance is fixed to be 70-80 mm, the flow rate of the argon ranges from 20 sccm to 25 sccm, the sputtering power ofSiO2 ranges from 250 W to 300 W, the incident power is 280-320 W, the reflecting power is 15-25 W, the plate
voltage ranges from 1 KV to 1.2 KV, and the plate current ranges from 0.3 mA to 0.35 mA. Areflecting film prepared through the method is high in reflection rate, resistant to friction and aging and capable of achieving self-cleaning.