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Preparation method of Ag-SiO2 high-reflectivity solar film surface reflecting material

A technology of solar thin film and surface reflection, which is applied in metal material coating process, sputtering plating, ion implantation plating, etc., can solve the problems of low reflectivity and achieve high reflectivity, long service life and aging resistance good effect

Inactive Publication Date: 2018-01-09
扬中市润宇电力设备有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Metals such as stainless steel, nickel, and chrome are durable but have low reflectivity

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Ag-SiO 2 The preparation method of the reflective material on the surface of the solar thin film with high reflectivity comprises the following steps:

[0020] (1) Cleaning of the substrate: Put the glass substrate into absolute ethanol and ultrasonically clean it for 15 minutes, then wash it several times with deionized water, then put the substrate into the cleaning solution (the quality of ammonia water, hydrogen peroxide and deionized water Soak in 1:2:5) for 15 minutes, take it out and rinse it repeatedly with deionized water, finally dry it and store it in a vacuum drying oven for later use;

[0021] (2) Preparation of Ag thin film: radio frequency magnetron sputtering method is used, and the target is pre-sputtered for 5 minutes before sputtering. The size of the Ag target used is Ф60×5mm, the purity is 99.99%, and the sputtering gas is high-purity Argon, the background vacuum is 6.1×10 -4 Pa, the working pressure is set to 0.6Pa, the target base distance is fi...

Embodiment 2

[0025] Ag-SiO 2 The preparation method of the reflective material on the surface of the solar thin film with high reflectivity comprises the following steps:

[0026] (1) Cleaning of the substrate: Put the glass substrate into absolute ethanol and ultrasonically clean it for 18 minutes, then wash it several times with deionized water, then put the substrate into the cleaning solution (the quality of ammonia water, hydrogen peroxide and deionized water Soak in 1:2:5) for 16 minutes, take it out and rinse it repeatedly with deionized water, finally dry it and immediately store it in a vacuum oven for later use;

[0027] (2) Preparation of Ag thin film: radio frequency magnetron sputtering method is adopted, and the target is pre-sputtered for 4 minutes before sputtering. The size of the Ag target used is Ф60×5mm, the purity is 99.99%, and the sputtering gas is high-purity Argon, the background vacuum is 6×10 -4 Pa, the working pressure is set to 0.8Pa, the target base distance...

Embodiment 3

[0031] Ag-SiO 2 The preparation method of the reflective material on the surface of the solar thin film with high reflectivity comprises the following steps:

[0032] (1) Cleaning of the substrate: put the glass substrate into absolute ethanol and ultrasonically clean it for 10 minutes, then wash it several times with deionized water, then put the substrate into the cleaning solution (the quality of ammonia water, hydrogen peroxide and deionized water Soak in 1:2:5) for 10 minutes, take it out and rinse it repeatedly with deionized water, finally dry it and immediately store it in a vacuum oven for later use;

[0033] (2) Preparation of Ag thin film: RF magnetron sputtering method is adopted, and the target is pre-sputtered for 8 minutes before sputtering. The size of the Ag target used is Ф60×5mm, the purity is 99.99%, and the sputtering gas is high-purity Argon, the background vacuum is 6×10 -4 Pa, the working pressure is set to 0.5Pa, the target base distance is fixed at ...

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Abstract

The invention relates to a preparation method of an Ag-SiO2 high-reflectivity solar film surface reflecting material. The preparation method comprises the steps of 1, cleaning a substrate, wherein ultrasonic cleaning is conducted for 10-20 minutes in absolute ethyl alcohol, deionized water cleaning is conducted, the substrate is soaked in a cleaning solution for 10-20 minutes, deionized water washing is conducted, and the substrate is blown to be dry for use; 2, preparing an Ag film, wherein a radio frequency magnetron sputtering method is adopted, high-purity argon serves as sputtering gas, the base vacuum degree ranges from 6*10<-4> Pa to 6.2*10<-4> Pa, the working pressure ranges from 0.5 Pa to 0.8 Pa, the target-substrate distance is fixed to be 70-80 mm, the flow rate of the argon ranges from 20 sccm to 25 sccm, the sputtering power of Ag ranges from 38 W to 42 W, the sputtering voltage ranges from 0.3 KV to 0.4 KV, and the current ranges from 0.1 A to 0.15 A; and 3, preparing a SiO2 film, wherein the radio frequency magnetron sputtering method is adopted for preparation, the high-purity argon serves as the sputtering gas, the base vacuum degree ranges from 6*10<-4> Pa to 6.2*10<-4> Pa, the working pressure ranges from 0.5 Pa to 0.8 Pa, the target-substrate distance is fixed to be 70-80 mm, the flow rate of the argon ranges from 20 sccm to 25 sccm, the sputtering power ofSiO2 ranges from 250 W to 300 W, the incident power is 280-320 W, the reflecting power is 15-25 W, the plate voltage ranges from 1 KV to 1.2 KV, and the plate current ranges from 0.3 mA to 0.35 mA. Areflecting film prepared through the method is high in reflection rate, resistant to friction and aging and capable of achieving self-cleaning.

Description

technical field [0001] The invention belongs to the field of solar energy manufacturing, in particular to an Ag-SiO 2 The invention discloses a method for preparing a reflective material on the surface of a solar thin film with high reflectivity. Background technique [0002] With the shortage of energy and the aggravation of environmental problems worldwide, the research, development and utilization of solar-based renewable energy have been paid more and more attention. Solar energy has many advantages: it is inexhaustible and inexhaustible; it does not emit any greenhouse gases, has no noise, and has minimal impact on the environment. It is a green energy source; it is distributed all over the world and has small geographical restrictions. Solar power generation mainly includes solar thermal power generation and solar photovoltaic power generation. The full development and utilization of solar energy is inseparable from the development of solar materials and technologies...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/16C23C14/18C23C14/20C23C14/10H01L31/0216
Inventor 司剑
Owner 扬中市润宇电力设备有限公司
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