99results about How to "Suppression ratio" patented technology

A solid state image pick-up device has shields for suppressing deterioration in a ratio of an output signal to output noises caused by crosstalks, suppressing deterioration in a ratio of the output signal to output noises caused by a coupling capacity, and suppressing deterioration in a ratio of the output signal to output noises caused by imbalance is provided. Shielding lines 301, 302, and 303 are arranged in a layer to which output lines 210 and 220 belong. Shielding lines 304, 305, and 306 are arranged over the shielding lines 301, 302, and 303, respectively. Further, shielding pins 307, 308, and 309 are arranged between the shielding lines 301 and 304, between the shielding lines 302 and 305, and between the shielding lines 303 and 306, respectively. No shielding line is arranged over output lines 210 and 220. A structure is made to be plane-symmetrical with respect to a plane including a center line of the shielding line 301 and a plane including a center line of the shielding line 304.

A semiconductor storage device crystallizes variable resistive element material layers arranged on side surfaces of multiple semiconductor layers in a stacked structure concurrently by applying a first current to any one of semiconductor layers in the stacked structure, and thereafter applies a second current to semiconductor layers other than a semiconductor layer to which the first current was applied.

A system and method is herein disclosed for reducing peak-to-average power ratio in an orthogonal frequency division multiplexing system which utilizes label bits inserted at predetermined locations of an information stream prior to encoding.

An object of the present invention is to suppress the increase of coarse particles due to the fusion of powder particles and reduce a ratio of particles that have been excessively spheroidized, when the powder particles are heat-treated. A heat treatment apparatus including a raw-material supply unit, a hot-air supply unit for heat-treating a raw material and a discharge portion for discharging the heat-treated powder particles, and supplying hot air toward a raw material to be supplied from the raw-material supply unit, wherein the hot-air supply unit has a first nozzle and a second nozzle which spread in the radial direction downward from an upstream side in a hot-air supply direction, the second nozzle is arranged in the inside of the first nozzle, the hot air passes through a space between the first nozzle and the second nozzle, and an air-flow adjustment unit section for rotating the supplied hot air spirally along an inner wall face of the apparatus is provided in an outlet portion of the hot-air supply unit.

A semiconductor storage device crystallizes variable resistive element material layers arranged on side surfaces of multiple semiconductor layers in a stacked structure concurrently by applying a first current to any one of semiconductor layers in the stacked structure, and thereafter applies a second current to semiconductor layers other than a semiconductor layer to which the first current was applied.

The present invention relates to a wavelength-tunable light source whose output wavelength can be externally controlled and a wavelength-division multiplexed transmission system using the source. A wavelength-tunable light source in accordance with the present invention is constituted to be able to vary the output wavelength of a Fabry-Perot laser diode, that is wavelength-locked to an injected light, by controlling the wavelength of the injected light. A wavelength-tunable light source in accordance with the present invention provides comparatively large output power and excellent economic features. The present invention also presents a wavelength-division multiplexed transmission system using the wavelength-tunable light source.

An architecture that enables one to realize a FIR transversal filter with apodized, interlaced bipolar tap coefficients (an). The tap coefficients, an, are varied via the control of the optical powers emitted by an array of WDM laser sources. Also, a filter architecture where tap coefficients can be agilely reconfigured in both polarity and magnitude. One chirped fiber-grating may be used to implement a series of wavelength-dependent tap-weights. The filter designs can be utilized to eliminate the low-pass response centered at DC, allowing one to place the center frequency (fc)1 of the first passband at a targeted intermediate frequency (IF).

A widely tunable laser is described where a compound semiconductor gain chip is coupled to a waveguide filter fabricated on silicon. The filter has two resonators with different free-spectral-ranges, such that Vernier tuning between the filters can be used to provide a single wavelength of light feedback into the gain chip, where the wavelength is adjustable over a wide range. The coupling between the gain chip and the filter is realized through a microlens whose position can be adjusted using micromechanics and locked in place.

Provided is a liquid crystal device including: a plurality of data lines and a plurality of scanning lines which cross each other; switching elements which are provided in correspondence with intersections between the data lines and the scanning lines; pixel electrodes connected to the switching elements; pixels configured in correspondence with the pixel electrodes; an image display region configured by the plurality of pixels; a first substrate having at least the switching elements; a second substrate which faces the first substrate; and liquid crystal interposed between the first substrate and the second substrate, wherein light incident from the first substrate is modulated by the liquid crystal, a light-shielding film is provided on a light incident side of at least the switching elements of the first substrate, and at least a portion corresponding to the image display region of the second substrate includes only a transparent layer which transmits light incident to the liquid crystal.

An active matrix substrate suppresses reduction in production yield and increase in production steps and simultaneously permits both sufficient securing of a storage capacity and improvement of an aperture ratio of a pixel. The active matrix substrate is an active matrix substrate and includes a thin film transistor disposed at an intersection of a scanning signal line with a data signal line on a substrate, the thin film transistor including a gate electrode connected to the scanning signal line, a source electrode connected to the data signal line, and a drain electrode connected to a drain lead-out wiring; a storage capacitor upper electrode connected to the drain lead-out wiring and a pixel electrode; and a storage capacitor wiring overlapping with the storage capacitor upper electrode through an insulating film, wherein the storage capacitor wiring has an extending portion overlapping with the drain lead-out wiring through the insulating film.

Provided is a light branching optical waveguide including: at least one incident light waveguide (A) optically connected to one end of a multi-mode optical waveguide; and output light waveguides (B) larger in number than the incident light waveguide (A) optically connected to the other end thereof, the light branching optical waveguide being characterized in that: an intensity distribution of light incident from at least one optical waveguide (a) out of the incident light waveguide (A) on the multi-mode optical waveguide at a connecting surface of the incident light waveguide (A) and the multi-mode optical waveguide is asymmetric with respect to a geometrical central axis of the optical waveguide (a); and an extended line of the geometrical center axis of the optical waveguide (a) does not coincide with a geometrical central axis of the multi-mode optical waveguide. Accordingly, it is possible to obtain a low-loss light branching optical waveguide having a reduced branch loss and a reduced variation in branching ratio, and further to obtain a light branching optical waveguide having small wavelength dependence as well as a reduced branch loss and a reduced variation in branching ratio.

An architecture that enables one to realize a FIR transversal filter with apodized, interlaced bipolar tap coefficients (an). The tap coefficients, an, are varied via the control of the optical powers emitted by an array of WDM laser sources. Also, a filter architecture where tap coefficients can be agilely reconfigured in both polarity and magnitude. One chirped fiber-grating may be used to implement a series of wavelength-dependent tap-weights. The filter designs can be utilized to eliminate the low-pass response centered at DC, allowing one to place the center frequency (fc)1 of the first passband at a targeted intermediate frequency (IF).