The invention relates to a method for detecting the metallic
silicon impurity content by using an X-
ray fluorescent spectrometry, which comprises the following steps: 1, preparation of a
test sample wafer, which comprises the steps of (1), dissolving a sample and flying
silicon and (2) performing melting to prepare the sample; 2, preparation of a standard sample
wafer, which is performed according to the preparation steps of the
test sample wafer after a
standard solution of
impurity elements to be tested is added; 3, establishment of a working curve for the X-
ray fluorescent spectrometry, namely establishing the working curve for the X-
ray fluorescent spectrometry by using the prepared standard sample wafer; and 4, measurement, namely putting the prepared sample wafer into an X-ray
fluorescence spectrometer, performing the measurement by using the established working curve, and automatically calculating the content of each
impurity element in the sample after the detection by the X-ray
fluorescence spectrometer. The method solves the problems that metallic
silicon is difficult to be melted directly to prepare the sample. Through experimental textual researches, the method has high accuracy and achieves the measurement of a plurality of elements. The method has a wide measurement range, not only meets the requirements of detecting over 97.5 percent metallic silicon but also solves the problems of detecting low-grade metallic silicon, and has strong applicability.