The invention discloses a
semiconductor structure forming method. The method comprises steps: a substrate is provided, wherein the substrate comprises a first area and a second area, surfaces of the first area and the second area of the substrate are provided with pseudo gate structures respectively, and the pseudo gate structure comprises a pseudo gate layer and an initial
mask layer located on the surface of the pseudo gate layer; a first stress layer is formed in the substrate at two sides of the pseudo gate structure in the first area; a first deep injection process is adopted to dope ions of a first type in the first stress layer and in the partial substrate at the bottom part of the first stress layer; after the first deep injection process, the thickness of the initial
mask layer is thinned, and a first
mask layer is formed; a
second source-drain area is formed in the substrate at two sides of the pseudo gate structure in the second area; and after the first
mask layer and the
second source-drain area are formed, a
dielectric layer is formed on the surface of the substrate, the
dielectric layer covers the side wall surface of the pseudo gate structure, and the surface of the
dielectric layer is flush with the top surface of the first
mask layer. The performance of the formed
semiconductor structure is improved.