Semiconductor device and forming method thereof

Abstract

The invention discloses a semiconductor device and a forming method thereof. The forming method of the semiconductor device comprises the steps as follows: a first ion implantation process is carried out on a substrate in a PMOS peripheral region at two sides of a first gate structure and a first graded junction region is formed at the lower part of a first peripheral source-drain region; a second ion implantation process is carried out on the first peripheral source-drain region and a first core drain-source region, and a first contact resistance region is formed on the surface of the first peripheral source-drain region and the surface of the first core drain-source region; a third ion implantation process is carried out on the substrate in an NMOS peripheral region at two sides of a third gate structure and a second graded junction region is formed at the lower part of a second peripheral source-drain region; and a fourth ion implantation process is carried out on a second peripheral source-drain region and a second core drain-source region, and a second contact resistance region is formed on the surface of the second peripheral source-drain region and the second core drain-source region. According to the semiconductor device, the problem of a short channel effect of a core device is solved while junction leakage current of an input / output device is reduced, thereby improving the electric property of the formed semiconductor device.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor device and a forming method thereof. Background technique [0002] A Metal-Oxide-Semiconductor (MOS, Metal-Oxide-Semiconductor) device has been known as one of the commonly used semiconductor devices in integrated circuits. The MOS device includes: P-type metal oxide semiconductor (PMOS, P-type MOS) device, N-type metal oxide semiconductor (NMOS, N-type MOS) device and complementary metal oxide semiconductor (CMOS, Complementary MOS) device. [0003] Metal oxide semiconductor devices are mainly divided into core (Core) devices and peripheral (I / O) devices (or called input / output devices) according to functional distinctions. According to the electrical type of metal oxide semiconductor devices, core devices can be divided into core NMOS devices and core PMOS devices, and input / output devices can be divided into input / output NMOS devices and i...

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Problems solved by technology

[0005] However, the semiconductor devices formed by the prior art still have the problem of poor electrical performance

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