The invention discloses an
electrode manufacturing method of a
semiconductor device and the
semiconductor device. The method comprises the steps that after the surface of a basic structure of the
semiconductor device is planarized, a hard compound layer is formed on the surface of the basic structure, then the hard compound layer is etched, so that a local area of the surface of the basic structure is exposed, the exposed local area is roughened, and the surface of the basic structure of the
semiconductor device is formed. The method comprises the following steps of: exposing a local area of a hard compound layer, forming a
metal lamination layer on the exposed local area, thermally expanding at least one
metal layer in the
metal lamination layer through annealing and pushing the hard compound layer, and cooling the metal lamination layer so as to form a gap between the metal lamination layer and the hard compound layer, finally, the top end face and the side wall of the metal lamination layer are covered with continuous
inert metal
layers through the gaps, a metal lamination structure is formed, and the
inert metal
layers can well protect the metal lamination layer from being corroded. The
electrode manufactured by the method is good in
corrosion resistance, and the performance of a
semiconductor device can be effectively guaranteed.