37results about How to "Low state" patented technology

The present invention provides quantum cascade lasers and amplifier that operate in a frequency range of about 1 Terahertz to about 10 Terahertz. In one aspect, a quantum cascade laser of the invention includes a semiconductor heterostructure that provides a plurality of lasing modules connected in series. Each lasing module includes a plurality of quantum well structure that collectively generate at least an upper lasing state, a lower lasing state, and a relaxation state such that the upper and the lower lasing states are separated by an energy corresponding to an optical frequency in a range of about 1 to about 10 Terahertz. The lower lasing state is selectively depopulated via resonant LO-phonon scattering of electrons into the relaxation state.

The invention includes a novel scan chain structure for LSSD or GSD IC operation. The scan chain structure includes a first flip-flop (L1) and a second flip-flop (L2) configured to operate the first flip-flop (L1) in normal mode operation, in scan mode operation, in initialization mode and in low leakage power mode operation, wherein each flip-flop within a long scan chain of latches includes a data input, data output, a clock input, a scan-in input and a scan-out output, arranged for normal mode operation. A buffer circuit is electrically connected between the scan-out output of the second flip-flop (L2) and the scan-in input of the first flip-flop (L1) for the next latch in the scan chain, the buffer circuit including a control element that controls the operation the first flip-flop (L1) to scan mode or low power leakage mode. The first flip-flop (L1) is set to a data output value upon exit from low power leakage mode that is the same value that it is set to at initialization during normal mode operation. The switching occurs in only one clock cycle.

A driver circuit is provided for enabling a transistor collector-emitter path to be used as a broadband periodic switch. The broadband driver circuit controls the magnitude of the transistor base-emitter current in order to enable a CLOSED switch state and to simultaneously control the magnitude of the transistor base-emitter reverse-bias voltage in order to enable the OPEN-switch state. The precise control of these parameters minimizes base-charge storage and prevents reverse-breakdown failure.

An antenna module is provided. The antenna module comprises a first radiation conductor, a second radiation conductor, a short-circuit element (s / c element), a ground plane, a feed-in cable and a spurious radiation conductor. One terminal of the second radiation conductor is near the first radiation conductor with a gap. One terminal of the s / c element is connected to the second radiation conductor and the other side of the s / c element is connected to the ground plane. The feed-in cable comprises a centre conductor and an external conductor, wherein the centre conductor is connected to the first radiation conductor and the external conductor is connected to the ground plane. The spurious radiation conductor is connected to the second radiation conductor. The second radiation conductor comprises a spurious radiation plate, a first radiation piece and a second radiation piece within the two sides of the second radiation conductor. The first radiation piece and a second radiation piece are in parallel and a gap is conducted between the first radiation piece and the second radiation piece.

The present invention is generally directed to a method of making chalcogenide glasses including holding the melt in a vertical furnace to promote homogenization and mixing; slow cooling the melt at less than 10° C. per minute; and sequentially quenching the melt from the top down in a controlled manner. Additionally, the present invention provides for the materials produced by such method. The present invention is also directed to a process for removing oxygen and hydrogen impurities from chalcogenide glass components using dynamic distillation.