The invention belongs to the technical field of semiconductor film preparation, and particularly relates to a preparation method of a zinc-oxide nanorod array film. The technical scheme adopted by the invention is as follows: the preparation method comprises the following steps of: (1) on the basis of adopting height (001)-oriented ZnO as a seed layer, putting the ZnO seed layer into an aqueous solution of zinc nitrate (Zn(NO3)2), polyethyleneimine (PEI) and hexamethylenetetramine (HMT) for epitaxial growth to obtain a (001) preferred-orientation ultralong ZnO nanorod array film; (2) carrying out fast annealing treatment on the film, and improving the photoluminescence performance of the ZnO array film. The technology has the advantages that the continuous growth of the ZnO nanorod at the temperature higher than 100 DEG C can be realized; due to the high-temperature growth condition, the crystallization quality of the nanorod is improved, the internal defects are obviously reduced; the zinc-oxide nanorod array film has excellent photoelectric performance, and is more conductive to being applied in photoelectric devices such as dye-sensitized solar batteries, ultraviolet detectors, field-effect transistors, light-emitting diodes and nanogenerators.