The invention provides a method for forming a self-aligned
common source, which is used in a memory construction and comprises the steps as follows: a plurality of word wires are formed on a substrate, wherein, two sides of each word wire are a
source area and a drain area respectively; photoetching is carried out to the source areas to form a
photoresist layer, wherein, the
photoresist layer covers the drain areas and parts of the word wires; the source areas that are not covered by the
photoresist layer are etched so that all the source areas are communicated to form a
common source area on which
ion implantation is carried out by
ion beams to form the self-aligned
common source; the direction in which the
ion beams are implanted and a normal on the surface of the substrate are separated by a
slant angle. In addition, the invention also provides a device for realizing the method. By adopting the technical proposal of the invention, the lateral
doping concentration under the boundary of the common source is obviously increased, thus ensuring that under the circumstance that the size of the
source area is reduced continuously the resistance of the common source can always be kept at the same level as the common source of large area, and the resistance value of the common source is reduced to a range meeting the requirements.