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Method for accelerating erasing operation of flash memory, and system thereof

A flash memory and memory technology, applied in the field of memory and flash memory, can solve the problems of insufficient erasing ability and long erasing time, and achieve the effect of reducing erasing time and improving erasing ability.

Active Publication Date: 2015-04-29
GIGADEVICE SEMICON (BEIJING) INC
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In view of this, the embodiments of the present invention provide a method and system for accelerating the erasing operation of the flash memory to solve the technical problems of insufficient erasing capability and long erasing time

Method used

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  • Method for accelerating erasing operation of flash memory, and system thereof
  • Method for accelerating erasing operation of flash memory, and system thereof
  • Method for accelerating erasing operation of flash memory, and system thereof

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Embodiment Construction

[0034] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, but not to limit the present invention. In addition, it should be noted that, for the convenience of description, only parts related to the present invention are shown in the drawings but not all content.

[0035] exist Figure 3-4 A first embodiment of the invention is shown in .

[0036] image 3 is a flow chart of the method for accelerating the erasing operation of the flash memory according to the first embodiment of the present invention. Such as image 3 As shown, the method includes the following steps:

[0037] Step 301, performing an erasing operation on a storage block or a storage area of ​​the flash memory.

[0038] In this embodiment, when performing an erasing operation on the storage block or storage area of ...

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Abstract

The invention discloses a method for accelerating the erasing operation of a flash memory, and a system thereof. The method comprises the following steps: erasing the memory block or memory area of the flash memory; and storing the substrate voltage of the memory cell of the memory block or the memory area when the erasing operation ends in a permanent memory arranged corresponding to the memory block or the memory area as a first substrate voltage, wherein the first substrate voltage is an initial substrate voltage of a next erasing operation of the memory block or the memory area. The method and the system can improve the erasing ability of the memory block or the memory area of the flash memory and shorten the erasing time.

Description

technical field [0001] The present invention relates to the technical field of memory, in particular to the technical field of flash memory, in particular to a method and system for accelerating the erasing operation of flash memory. Background technique [0002] Flash memory (Flash Memory) is a non-volatile or non-volatile (simply put, it can still maintain the stored data information in the case of power failure) semiconductor memory. It has the advantages of small size, low power consumption, and not vulnerable to physical damage, and is an ideal storage medium for mobile digital products. [0003] The data information of the flash memory is stored in the storage unit. figure 1 A simplified structural diagram of storage cells of a storage block or storage area of ​​a prior art flash memory is shown. Depend on figure 1 It can be seen that the memory cell includes a floating gate field effect transistor, and the memory cell stores data information through electrons in a ...

Claims

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Application Information

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IPC IPC(8): G11C16/14
Inventor 胡洪洪杰王林凯
Owner GIGADEVICE SEMICON (BEIJING) INC
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