The invention relates to a simulative switch circuit structure. The simulative switch circuit structure comprises a phase
inverter circuit module, a passage geminate
transistor circuit module and a
breaking point protection circuit module, wherein an input end of the phase
inverter circuit module is connected with a
control signal input terminal (CRT), the passage geminate
transistor circuit module is connected between a
signal input end (IN) and a
signal output end (OUT), the passage geminate
transistor circuit module comprises a third P-channel
Metal Oxide Semiconductor (PMOS)
field effect tube (P3), an output end of the phase
inverter circuit module is connected with a grid
electrode of the third PMOS
field effect tube (P3), and a substrate of the third PMOS
field effect tube (P3) is connected with a power source (VDD) or the
signal input end (IN) through the
breaking point protection circuit module. According to the simulative switch circuit structure, the phenomenon that an input signal leaks power to the VDD through a parasitic
diode which is arranged between a field effect tube source
electrode and the substrate is avoided, normal turn-off of the simulative switch in a power source power off condition is achieved, the linkage current from the input end to the power source is avoided, and the simulative switch circuit structure is simple in structure, practical, stable and reliable in working performance, and wide in application range.