Non-volatilization SRAM with metallic oxide as storage medium and uses thereof
A non-volatile, oxide technology, applied in information storage, static memory, digital memory information, etc., can solve the problems of complex manufacturing process, slow extension of small feature size, and high cost of ferroelectric FPGAs
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[0032] The present invention will be described in more detail below with reference to the illustrations and examples. The present invention provides preferred embodiments, but should not be construed as being limited to the embodiments set forth herein.
[0033] Where the referenced figures are schematic illustrations of idealized embodiments of the invention, the illustrated embodiments of the invention should not be construed as limited to the specific shapes of the regions shown in the figures.
[0034] It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly connected to" or "directly coupled to" another element, there are no intervening elements present.
[0035] The accompanying drawings (1-3) are explained in the technical background of the invention...
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