The invention belongs to the technical field of
millimeter wave communication, and particularly provides a V-band
CMOS power
amplifier which is used for solving the problems that in the prior art, thecircuit structure is complex, the
chip area is large, and the design difficulty of an
amplifier matching circuit is large. The
amplifier comprises an input matching circuit, a first-stage amplification circuit, an inter-stage matching circuit, a second-stage amplification circuit and an output matching circuit which are connected in sequence, wherein the two stages of amplification circuits are formed by stacking transistors M1 (or M3) and M2 (or M4) respectively; the
transistor stacking mode is simple in structure, the breakdown risk of the transistors can be effectively reduced, and the optimal power amplifier saturation output power is obtained; meanwhile, the
transistor stacking structure can greatly improve the stability of the
millimeter wave power amplification circuit; in addition, the input and output matching circuits in a grounding
coplanar waveguide form can further improve the
gain and the output power of the
millimeter wave amplifier while realizing good input and outputmatching of the stacked transistors in a millimeter
wave frequency band.