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249results about "Amplifiers with min 3 electrodes or 2 PN junctions" patented technology

Synthetic circuit component and amplifier applications

Synthetic circuit elements and amplifier applications for synthetic circuit elements are provided. The synthetic circuit elements disclosed herein may be configured to compensate for some or all of the parasitic capacitance normally associated with circuit elements disposed on a substrate providing a selectable impedance characteristic. Amplifier circuit constructed using such synthetic circuit elements exhibit improved performance characteristics such as improved recovery time, frequency response, and time domain response.
Owner:ANALOG DEVICES INT UNLTD

Optical receiver circuit

Optical receiver circuit having a first, illuminable reception device for converting an optical signal into an analog electrical signal; a first preamplifier for amplifying the output signal of the first reception device; a postamplifier having a first input and a second input, the first input being supplied with the signal of the first reception device (said signal having been amplified in the first preamplifier) and the second input being supplied with a reference signal; an offset compensation circuit, which regulates the difference between the mean value of the electrical signal at the first input of the postamplifier and the reference signal at the second input of the postamplifier to a constant value; and having a signal detection device, which detects a control signal of the offset compensation circuit and carries out signal detection in a manner dependent on this signal. The invention provides signal detection in an optical receiver circuit, which manages with few additional components.
Owner:AVAGO TECH INT SALES PTE LTD

Power semiconductor device and power conversion system using the device

Aspects of the invention are related to a power semiconductor module applied to a multi-level converter circuit with three or more levels of voltage waveform. Aspects of the invention can include a first IGBT to which a diode is reverse parallel connected and a second IGBT having reverse blocking voltage whose emitter is connected to the emitter of the first IGBT are housed in one package, and each of the collector of the first IGBT, the collector of the second IGBT, and the connection points of the emitter of the first IGBT and the emitter of the second IGBT, is an external terminal.
Owner:FUJI ELECTRIC CO LTD

High-frequency power amplification module and radio communication device

In a high frequency power amplifier module of a multi-stage structure in which a plurality of heterojunction bipolar transistors (npn-type HBTs) are cascade-connected, a protection circuit in which a plurality of pn junction diodes are connected in series is connected between the collector and emitter of each HBT. The p-side is connected to the collector side, and the n-side is connected to the emitter side. A protection circuit in which pn junction diodes of the number equal to or smaller than that of the pn junction diodes are connected in series is connected between the base and the emitter. The p-side is connected to the base side, and the n-side is connected to the emitter side. With the configuration, in the case where an overvoltage is applied across the collector and emitter due to a fluctuation in load on the antenna side, the collector terminal is clamped by an ON-state voltage of the protection circuits, so that the HBT can be prevented from being destroyed. Since the similar protection circuit is assembled between the base and emitter, even when the operator touches the module at the time of manufacturing the high frequency power amplifier module, the HBT can be prevented from being destroyed by the clamping effect of the protection circuit between the base and emitter and the protection circuit between the collector and emitter. Thus, an improved manufacturing yield of the high frequency power amplifier module and a wireless communication apparatus can be achieved, and destruction caused by fluctuation in load impedance of the wireless communication apparatus can be prevented.
Owner:RENESAS ELECTRONICS CORP

Reduction of voltage spikes in switching half-bridge stages

A path configuration for a power switch and driver can introduce independent parasitic inductance coupled to the power switch to slow a switching speed of the switch and reduce voltage spikes on the switch during switching events. The path for low side supply of the drive to the negative DC voltage reference is separate from the path of the power switch to the reference. The resulting reduction in voltage spikes due to the slowed switching time maintains performance in an audio amplifier without modifying a switch command signal to compensate for voltage spikes. The path configuration avoids reliance on specifying higher rated components that increase application costs.
Owner:TEXAS INSTR INC
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