120 results about "Electron storage" patented technology

A system for automatically filling a reservoir. The system includes a first mechanism that automatically determines one or more parameters associated with the reservoir. A second mechanism fills the reservoir with an appropriate amount and type of filler based on the one or more parameters. In a specific embodiment, the one or more parameters include filler type and current filler level information. The parameters also include an identification number associated with a user of the reservoir. Upon filling of the reservoir, a billing system automatically bills or charges a user based on the identification number and filler level information obtained via the first mechanism. The billing system includes a database that maintains billing information associated with the identification number. The billing system further includes a network connection that facilitates communications with the database. A control panel and accompanying user-interface software enables a user to edit the identification number and / or to edit a charge number associated with the identification number. A reservoir sensor measures the current filler level in the reservoir and provides the filler level information in response thereto. A dispensing container accommodates the reservoir and transfers filler from the dispensing container to the reservoir in response to a signal from the first mechanism. A container level sensor senses current filler levels in the container and provides container filler level information to a remote monitoring system via a network in response thereto. In a more specific embodiment, the reservoir is a printer cartridge, and the filler is printing consumable, such as toner. The first mechanism includes an electronic storage device attached to the printer cartridge that communicates with the reservoir sensor and maintains the parameters describing the reservoir.

A compact synchrotron radiation source includes an electron beam generator, an electron storage ring, one or more wiggler insertion devices disposed along one or more straight sections of the electron storage ring, the one or more wiggler insertion devices including a set of magnetic poles configured to generate a periodic alternating magnetic field suitable for producing synchrotron radiation emitted along the direction of travel of the electrons of the storage ring, wherein the one or more wiggler insertion devices are arranged to provide light to a set of illumination optics of a wafer optical characterization system or a mask optical characterization system, wherein the etendue of a light beam emitted by the one or more wiggler insertion devices is matched to the illumination optics of the at least one of a wafer optical characterization system and the mask optical characterization system.

In a method for manufacturing a single electron memory device including a single electron storage element in a gate lamination pattern formed on a nano-scale channel region of a MOSFET, formation of the gate lamination pattern includes sequentially forming a lower layer and a single electron storage medium for storing a single electron tunneling through the lower layer on a substrate, forming an upper layer including a plurality of quantum dots on the single electron storage medium, forming a gate electrode layer on the upper layer to be in contact with the plurality of quantum dots, and patterning the lower layer, the single electron storage medium, the upper layer, and the gate electrode layer, in reverse order.

A system for detecting and evading vehicle identification means (VIM), comprising: locating means, control means having a plurality of I / O channels, each adapted to receive or transmit serial or parallel data, processing means, electronic storage means comprising at least one database of known VIM coordinates and identification prevention device (IPD) adapted to automatically prevent identification of the vehicle's license plate number, owner, driver or any part or passenger of the vehicle.

The invention discloses an AlGaN based deep-UV LED epitaxial structure with a function of improving light output. The epitaxial structure comprises a substrate, a non-doped AlGaN buffer layer, a dopedN type AlGaN layer, an AlxGa(1-x)N / AlyGa(1-y)N MQW (multi-quantum well) active area, an insert layer, a P type doped electron blocking layer, a P type AlGaN layer and a P type GaN cap layer from bottom to top in sequence. According to the epitaxial structure, a barrier layer of a luminous layer of the MQW active area of the AlGaN based deep-UV LED epitaxial structure is designed to realize sawtooth gradual change of Al component and contain peaks and trenches, electron storage function of the active area is enhanced, electron overflowing can be reduced, and light output power of a deep-UV LEDdevice is improved.

The present invention is a system for handling liquid and a method for the same. The system has a container capable of holding a liquid. An electronic storage device is coupled with the container for electronically storing information relating to the liquid stored in the container. The system also has an antenna, for storing information to and reading information from the electronic storage device. Finally, the system has a microprocessor-based controller, coupled with the antenna, for controlling processing of the liquid based on information read from the electronic storage device by the antenna.

The invention aims to develop a polyacid-based metal organic framework crystal material with an intercalation structure, which effectively overcomes the technical bottlenecks that a simple polyacid material is wide in band gap (3 eV), can only absorb ultraviolet light, is soluble in water, and has a recover rate, and the like. Special intercalation structure characteristics of the material are utilized to improve the electron storage capacity of polyacid as an electron acceptor, accelerate the separation of catalytic photo-generated carriers, enhance the photocatalytic efficiency of a catalyst, and expand the spectral absorption range to visible light. The chemical formula of the polyacid-based metal organic framework crystal material with the intercalation structure is designed and developed as [CuI2CuII5(ptz)6(OH)2(4H2O)GeW12O40].6H2O. A method for preparing the material comprises the following steps: dissolving germanium tungstate, copper chloride and 5-(pyridine-2-yl)tetrazole organic ligand into deionized water to obtain a reaction solution, adjusting a pH value, and then reacting at a temperature of 160 DEG C for 3 days. . The metal organic framework crystal material with thepolyacid-based intercalation structure having visible light catalytic properties can be obtained.

A separator includes a substrate layer and a porous surface layer that is provided on at least one major surface of the substrate layer and contains a first particle, a second particle, and a resin material. The surface layer includes a first region configured by the first particle and a second region configured by the second particle and the resin material.

The present invention relates to a photosensitive detector with a composite dielectric gate MOSFET structure and its signal readout method. The MOSFET structure detector is formed on a p-type semiconductor substrate. N-type semiconductor regions locate on the two sides of the top part of the p-type semiconductor substrate to form a source and a drain. An underlying dielectric layer, a photo-electron storage layer, a top dielectric layer, and a control gate are stacked on the substrate in sequence. The top insulating dielectric layer can prevent the photoelectrons stored in the photo-electron storage layer from leaking into the control gate. The source and the drain are floating when photoelectrons are collected and injected into the photoelectron storing layer to be held therein. There is a transparent or semi-transparent window for detecting incident light forming on the substrate or gate surface. This invented detector has excellent scalability, basic compatibility with the flash memory fabricating technology, low leakage current, higher imaging speed than CCD, non-sensitivity to processing defects, larger dynamic range than other structures and higher accuracy of signal readout.

A high power extreme ultraviolet (EUV) beam is produced. An electron beam is injected in a compact electron storage ring configured for emission of free-electron laser (FEL) radiation. The electron beam is passed through a magnetic undulator on each of a plurality of successive revolutions of the electron beam around the compact electron storage ring. The electron beam is induced to microbunch and radiate coherently while passing through the magnetic undulator. A portion of the free-electron laser radiation at an extreme ultraviolet wavelength produced by an interaction of the electron beam through the magnetic undulator is outputted.