Split-grid type metal-oxide-semiconductor field effect transistor (MOSFET) imaging detector and operating method thereof
An imaging detector and split gate technology, applied in image communication, TV, color TV components, etc., can solve the problems of difficult to continue to improve resolution, pixel size limitation, and extremely small pixel size
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[0043] The split gate type MOSFET imaging detector of the present invention, the composition of its unit device figure 1 As shown, the details are as follows: a deep N-type well (2) is implanted on a P-type semiconductor silicon wafer (1), and a P-type well (3) is implanted on the deep N-type well to form a split-gate MOSFET imaging detection device substrate. The split-gate MOSFET includes a floating gate MOSFET and two selection gates, and the two selection gates (8) are arranged on both sides of the floating gate MOSFET, connecting the substrate controlled by the control gate (7) and the imaging detector The source and drain (9) are separated.
[0044] The structure of the floating gate MOSFET is that two layers of insulating dielectric layers (4) and (6) are respectively arranged on the P-type substrate (3), and an optoelectronic storage layer (5) is arranged between the two layers of insulating dielectric layers. A control grid (7) is arranged directly above the dielect...
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