Split gate mosfet imaging detector and method of operation thereof

Abstract

The invention provides a split-grid type metal-oxide-semiconductor field effect transistor (MOSFET) imaging detector and an operating method thereof. The split-grid type MOSFET is structurally characterized in that two insulating medium layers and a control grid are arranged above a P-type substrate; a photoelectron storage layer is arranged between the two insulating medium layers; selection grids are arranged on two sides of the control grid; a substrate controlled by the control grid is separated from the source and drain of a probe; the insulating medium layer on the top of the substrate contacted with the control grid is a material for preventing the loss of electric charge stored in the photoelectron storage layer to the control grid; and a transparent or semitransparent window of the probe length of the probe is arranged at one of the surfaces of the substrate layer or the control grid. By utilizing the split-grid type MOSFET imaging detector, the collection efficiency of the photoelectron is effectively improved; the dark current of the probe is inhibited; and the detector is not sensitive to process defects, wide in dynamic range and high accuracy in signal reading.

Description

1. Technical field [0001] The present invention relates to a solid-state imaging detector device, in particular to the device structure and working mechanism of a solid-state imaging detector in the infrared, visible light band to ultraviolet band, and is a non-volatile imaging device with storage function based on a split gate structure MOSFET and its Operation method. 2. Background technology [0002] Image sensors are widely used in various fields such as military, civilian and national defense, such as digital cameras, mobile phones, and video cameras. The main solid-state imaging detectors currently developed are CCD imaging detectors and CMOS-APS. CCD appeared earlier, and now its production technology is relatively mature. Its basic structure is a series of MOS capacitors connected in series, and the generation and change of the semiconductor surface potential well are controlled by the voltage pulse sequence on the capacitor, thereby realizing the storage of photoge...

AI Technical Summary

Problems solved by technology

However, from a structural point of view, this imaging device actually uses three transistors (two MOS transistors and a floating gate MOS transistor) as a pixel unit, and the pixel size is limited, so it is difficult to achieve extreme With small pixels, it is difficult to continue to improve the resolution

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