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53results about How to "Type of good" patented technology

Controlled decoration of carbon nanotubes with aerosol nanoparticles

The present invention addresses the problem of conveniently and efficiently decorating nanostructures such as carbon nanotubes with aerosol nanoparticles using electrostatic force directed assembly (“ESFDA”). ESFDA permits size selection as well as control of packing density spacing of nanoparticles. ESFDA is largely material independent allowing different compositions of such nanoparticle-nanotube structures to be produced.
Owner:UMW RES FOUND INC

Coated paper for industrial inkjet printing presses and method of producing the same

The present invention is to provide a coated paper for industrial inkjet printing presses comprising:
    • a base paper, and
    • a coating layer containing at least one selected from the group consisting of a cationic resin and a water-soluble polyvalent cationic salt, and a pigment containing kaolin, on the base paper;
    • wherein
    • the content of the kaolin is 30 parts by mass to 80 parts by mass based on 100 parts by mass of the pigment in the coating layer,
    • an arithmetic mean roughness (Ra) stipulated in JIS B 0601:2001 (ISO 4287:1997) of a coated paper surface on the side where the coating layer is located is 4.5 μm to 7.5 μm,
    • the coated paper surface on the side where the coating layer is located has 1 to 350 protruding parts per 1.0 square centimeter, and
    • the protruding part is a protruding part having the maximum width of 10 μm to 100 μm measured using a photographed image of the coated paper surface taken by magnifying 50 times using an electron microscope.
According to the present invention, coated paper for industrial inkjet printing presses that achieves excellent uniformity in color densities and ink absorbability, that has capability of suppressing strike-through of inks, and that achieves excellent paper feeding characteristics can be provided.
Owner:MITSUBISHI PAPER MILLS LTD

Nonvolatile storage device and method for manufacturing the same

ActiveUS20100013002A1High writing efficiencyAdvantageous in miniaturizationSolid-state devicesSemiconductor/solid-state device manufacturingImpurity diffusionSemiconductor
Provided is an excellent nonvolatile storage device having advantageous in miniaturization and less variation in initial threshold value, and exhibiting a high writing efficiency, without an erasing failure and a retention failure. The nonvolatile storage device is characterized by including a film stack extending from between a semiconductor substrate and a gate electrode onto at least a surface of the gate electrode lying on a first impurity diffusion region side, the film stack including a charge accumulating layer and a tunnel insulating film sequentially from a gate electrode side.
Owner:NEC CORP
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