53results about How to "Small refractive index" patented technology

The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The semiconductor structure includes a first cladding layer of a Group III nitride, a second cladding layer of a Group III nitride, and an active layer of a Group III nitride that is positioned between the first and second cladding layers, and whose bandgap is smaller than the respective bandgaps of the first and second cladding layers. The semiconductor structure is characterized by the absence of gallium in one or more of these structural layers.

An optical adjusting member according to the invention includes a base member, a plurality of lenses, and a light diffusion layer. The base member has optical transparency. The plurality of lenses are formed on the base member. The light diffusion layer is formed on the plurality of lenses, and at least top edge parts of the lenses are buried in the light diffusion layer. In the optical adjusting member according to the invention, at least the top edge parts of the plurality of lenses are buried in the light diffusion layer and therefore the lenses are less susceptible to damages. The optical adjusting member according to the invention has a light collecting function by the lenses and a diffusion function by the light diffusion layer.

A substrate is provided with an abrasion resistance antireflection coating. The coated substrate includes a multilayer antireflection coating on at least one side. The coating has layers with different refractive indices, wherein higher refractive index layers alternate with lower refractive index layers. The layers having a lower refractive index are formed of silicon oxide with a proportion of aluminum, with a ratio of the amounts of aluminum to silicon is greater than 0.05, preferably greater than 0.08, but with the amount of silicon predominant relative to the amount of aluminum. The layers having a higher refractive index include a silicide, an oxide, or a nitride.

A III-nitride light emitting diode (LED) and method of fabricating the same, wherein at least one surface of a semipolar or nonpolar plane of a III-nitride layer of the LED is textured, thereby forming a textured surface in order to increase light extraction. The texturing may be performed by plasma assisted chemical etching, photolithography followed by etching, or nano-imprinting followed by etching.

An exposure system includes an exposure part for irradiating a resist film formed on a substrate with exposing light through a mask with a liquid provided on the resist film; and a liquid supply part for supplying the liquid to the exposure part. The liquid supplying part includes a plurality of liquid units respectively containing a plurality of liquids having different refractive indexes, and a selection unit for selecting one liquid unit from the plural liquid units and supplying a liquid contained in the selected liquid unit to the exposure part.

Disclosed is a light-receiving device comprising a substrate provided with at least one light-receiving element and a transparent cover (6) arranged above the surface of the substrate on which the light-receiving element is formed. A sealing member (5) is provided between the substrate and the transparent cover (6) at least in the region of the substrate surrounding the light-receiving element. This sealing member (5) is composed of a material containing cyclic olefin resin.

An image sensor includes multiple unit pixels defined by a pixel isolation layer on a substrate, at least a pair of photoelectric converters in each of the unit pixels and at least an optical divider on a rear surface of the substrate at each of the unit pixels. The photoelectric converters are separated by at least a converter separator in each of the unit pixels and generate photo electrons in response to an incident light that is incident to an incident point of the respective unit pixel. The optical divider is overlapped with the incident point and divides the incident light into a plurality of split lights having the same amount of light such that each of the photoelectric converters receives the same amount of light from the split lights.

An optical device includes: a silicon substrate; a plurality of silicon oxide columns having a rectangular plan shape; and a cavity disposed between the columns. Each column has a lower portion disposed on the substrate. Each column has a width defined as W1. The cavity has a width defined as W2. A ratio of W1 / W2 becomes smaller as it goes to the lower portion of the column. A core layer provided by the columns and the cavity can have the thickness equal to or larger than a few dozen μm easily. Therefore, connection loss between a light source and the device is reduced.

An optical unit, comprising: a light source; a color separation means for separating a light emitted from the light source into plural pieces of color lights; reflection-type image display elements, upon each being incident the corresponding color of the lights from the color separation means, and for forming an optical image for each of the color lights, depending upon an image signal, with using polarization characteristics which the reflection-type image display elements have; and a color synthesizing means for synthesizing the optical images of the respective color lights, to be projected through a projection lens, enlargedly, and further comprising: a reflection-type polarization plate functioning as a polarization plate due to diffraction, being provided on an optical path extending from the color separation means to the reflection-type image display elements, to be a polarizer and an analyzer to the reflection-type image display elements; and an optical chassis for holding the reflection-type polarization plate and the reflection-type image display elements thereon, and having a translucent window on an incident light side of the reflection-type polarization plate while an exiting light side of the reflection-type polarization plate is sealed with an incident surface of the color synthesizing means, wherein a hermetically sealed space is defined by the optical chassis, the reflection-type image display elements and the incident surface of the color synthesizing means, and within the hermetically sealed space is disposed a translucent liquid having refraction index from 1.2 to 1.9.

A microlens array substrate includes: a light transmitting substrate in which a first lens surface formed of a concave surface is formed on a substrate surface on one side; a first lens layer which covers the substrate surface on one side and has a refractive index which is different from that of the light transmitting substrate; a light transmitting layer which covers the first lens layer on the opposite side to the light transmitting substrate; and a second lens layer which covers the light transmitting layer on the opposite side to the light transmitting substrate and in which a second lens surface formed of a convex surface is formed on the opposite side to the light transmitting substrate, in which the light transmitting layer has smaller refractive index and coefficient of thermal expansion than those of the first lens layer and the second lens layer.

The present invention is a semiconductor structure for light emitting devices that can emit in the red to ultraviolet portion of the electromagnetic spectrum. The semiconductor structure includes a first cladding layer of a Group III nitride, a second cladding layer of a Group III nitride, and an active layer of a Group III nitride that is positioned between the first and second cladding layers, and whose bandgap is smaller than the respective bandgaps of the first and second cladding layers. The semiconductor structure is characterized by the absence of gallium in one or more of these structural layers.

The present invention provides a composition for sealing an optical device comprising (i) a silylated organopolysiloxane with a polystyrene equivalent weight average molecular weight of 5×104 or greater, represented by an average composition formula:R1a(OX)bSiO(4−a−b) / 2 (wherein, R1 represents an alkyl group, alkenyl group, or aryl group; X represents a combination of a group represented by a formula —SiR2R3R4 (wherein, RE to R4 are monovalent hydrocarbon groups), and an alkyl group, alkenyl group, alkoxyalkyl group or acyl group; a represents a number within a range from 1.00 to 1.5; b represents a number that satisfies 0 b 2, and a+b satisfies 1.00 a+b 2), and (ii) a condensation catalyst, as well as a transparent cured product obtained by curing the composition, and a method of sealing a semiconductor element that comprises a step of applying the composition to a semiconductor element, and a step of curing the composition that has been applied to the semiconductor element. The composition can form a coating film that exhibits excellent levels of heat resistance, ultraviolet light resistance, optical transparency, toughness and adhesion.

A light emitting apparatus of the present invention includes: an EL emitting unit including at least a light emitting layer which generates an EL light; and a pair of light blocking layers arranged such that they sandwich the light emitting layer so that the layers block the EL light generated in the light emitting layer and that the EL light is radiated only from the end of the light emitting layer; and a light emitting unit which optically guides the EL light radiated from the end of the light emitting layer and emits a light having a wavelength equal to or different from that of the EL light. The EL light is emitted only from the end of the light emitting layer since the EL light generated in the light emitting layer is blocked by the pair of light blocking layers. This emitted EL light is optically guided by the light emitting unit and emitted as it is or a light having a different wavelength from the EL light.

The light-emitting device of the present technique includes a substrate, a Group III nitride semiconductor layer disposed on the substrate, a current-blocking layer disposed on the Group III nitride semiconductor layer, a transparent conductive oxide film disposed on the Group III nitride semiconductor layer and the current-blocking layer, a dielectric film covering the Group III nitride semiconductor layer and at least a part of the transparent conductive oxide film, and a phosphor-containing resin coating disposed on the dielectric film. The Group III nitride semiconductor layer has a refractive index greater than that of the transparent conductive oxide film. The transparent conductive oxide film has a refractive index greater than that of the dielectric film. The dielectric film has a refractive index greater than that of the phosphor-containing resin coating. The current-blocking layer has a refractive index smaller than that of the phosphor-containing resin coating.

The main object of the present invention is to provide a colour filter with a retardation layer, capable of minimizing light leakage even in the case the visual angle is large in the black display state, for a liquid crystal display. The present invention achieves the object by providing a colour filter with a retardation layer comprising a substrate, a colour layer formed on the substrate, being arranged in a plurality of rows having different thicknesses according to each colour, a first retardation layer formed on the colour layer, made of a liquid crystalline polymer, having its optic axis perpendicular to a plane of the substrate so as to function as a C plate, and a second retardation layer the colour layer, wherein the optic axis of the second retardation layer is arranged parallel to the plane of the substrate so as to function as a positive Aplate with positive refractive index anisotropy, and the refractive index anisotropy of the second retardation layer in the visible light range decreases at shorter wavelengths inverse dispersion characteristics.

A semiconductor laser device includes a lower cladding layer; an active layer disposed on the lower cladding layer; all upper cladding layer disposed on the active layer; a diffraction-grating layer disposed on the upper cladding layer, the diffraction-grating layer including periodic projections and recesses; and a buried layer disposed on the periodic projections and recesses in the diffraction-grating layer. In addition, the diffraction-grating layer and the buried layer constitute a diffraction grating. The lower cladding layer, the active layer, and the upper cladding layer constitute a first optical waveguide, the active layer constituting a first core region in the first optical waveguide. The upper cladding layer, the diffraction-grating layer, and the buried layer constitute a second optical waveguide, the diffraction-grating layer constituting a second core region in the second optical waveguide. Furthermore, the first optical waveguide and the second optical waveguide are optically coupled through the upper cladding layer.