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183results about How to "Satisfactory property" patented technology

Nitride semiconductor device

According to the nitride semiconductor device with the active layer made of the multiple quantum well structure of the present invention, the performance of the multiple quantum well structure can be brought out to intensify the luminous output thereof thereby contributing an expanded application of the nitride semiconductor device. In the nitride semiconductor device comprises an n-region having a plurality of nitride semiconductor films, a p-region having a plurality of nitride semiconductor films, and an active layer interposed therebetween, a multi-film layer with two kinds of the nitride semiconductor films is formed in at least one of the n-region or the p-region.
Owner:NICHIA CORP

Aromatic vinyl/isoprene block copolymer, process for the production thereof, and hardenable pressure-sensitive adhesive composition containing the same

An aromatic vinyl compound-isoprene block copolymer composition comprising (i) 5-50 wt. % a branched copolymer of the formula: (A-B)nX wherein A is a polymer block of an aromatic vinyl monomer, B is a polymer block of isoprene, and X is a residue of a polyfunctional coupling agent, and (ii) 50-95 wt. % of a diblock copolymer of the formula: A-B wherein A and B are as defined above. This copolymer composition is produced by allowing an aromatic vinyl monomer to contact with an organic lithium initiator to prepare a polymer block A; incorporating isoprene thereto to prepare a diblock copolymer A-B; and then, adding a polyfunctional coupling agent to convert a part of the diblock copolymer A-B to the branched copolymer (A-B)nX. This block copolymer composition is useful for an adhesive or pressure sensitive adhesive composition.
Owner:ZEON CORP

Lithium ion battery

An object of the present invention is to provide a lithium ion battery which is excellent in properties at large current and can be applied to applications requiring high output power even when the mixture layers are made thick. The present invention provides a lithium ion battery including a positive electrode including a positive electrode mixture layer formed on a current collector, a negative electrode including a negative electrode mixture layer formed on a current collector and an electrolyte, the positive electrode and the negative electrode being disposed through the intermediary of a separator, wherein the positive electrode includes as a positive electrode active material a lithium composite oxide represented by LiNiaMnbCOcMdO2 (in the formula, M is at least one selected from the group consisting of Fe, V, Ti, Cu, Al, Sn, Zn, Mg, B and W, a+b+c+d=1, 0.2≦a≦0.8, 0.1≦b≦0.4, 0≦c≦0.4 and 0≦d≦0.1), the negative electrode includes graphite as a negative electrode active material, the interlayer distance (d002) of the graphite is 0.335 nm or more and 0.338 nm or less, the one-side thickness A (μm) of the positive electrode mixture layer is 60 or more and 85 or less, the product A×B between the one-side thickness A and the density B (g/cm3) of the positive electrode mixture layer is 160 or more and 220 or less, the one-side thickness C (μm) of the negative electrode mixture layer is 40 or more and 75 or less, and the product C×D between the one-side thickness C and the density D (g/cm3) of the negative electrode mixture layer is 65 or more and 105 or less.
Owner:HITACHI VEHICLE ENERGY

Semiconductor thin film forming system

A thin film processing method for processing the thin film by irradiating the optical beam to the thin film, wherein one set of irradiation includes the first optical pulse irradiation to the thin film and the second optical pulse irradiation to the thin film which substantially starts with a delay to the first optical pulse irradiation, the one set of irradiation being repetitively carried out for processing the thin film, and the relationship between the first and the second pulse satisfies (the pulse width of the first optical pulse)>(the pulse width of the second optical pulse). Preferably, the relationship between the first and the second pulse satisfies (the irradiation intensity of the first optical pulse)≧(the irradiation intensity of the second optical pulse). A silicon thin film with a small trap state density is thus manufactured by the optical irradiation.
Owner:NEC CORP +1
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