45results about How to "Refractive index difference" patented technology

An optical adjusting member according to the invention includes a base member, a plurality of lenses, and a light diffusion layer. The base member has optical transparency. The plurality of lenses are formed on the base member. The light diffusion layer is formed on the plurality of lenses, and at least top edge parts of the lenses are buried in the light diffusion layer. In the optical adjusting member according to the invention, at least the top edge parts of the plurality of lenses are buried in the light diffusion layer and therefore the lenses are less susceptible to damages. The optical adjusting member according to the invention has a light collecting function by the lenses and a diffusion function by the light diffusion layer.

In an InGaN-based nitride semiconductor optical device having a long wavelength (440 nm or more) equal to or more than that of blue, the increase of a wavelength is realized while suppressing In (Indium) segregation and deterioration of crystallinity. In the manufacture of an InGaN-based nitride semiconductor optical device having an InGaN-based quantum well active layer including an InGaN well layer and an InGaN barrier layer, a step of growing the InGaN barrier layer includes: a first step of adding hydrogen at 1% or more to a gas atmosphere composed of nitrogen and ammonia and growing a GaN layer in the gas atmosphere; and a second step of growing the InGaN barrier layer in a gas atmosphere composed of nitrogen and ammonia.

A four junction solar cell having an upper first solar subcell composed of a semiconductor material having a first band gap; a second solar subcell adjacent to said first solar subcell and composed of a semiconductor material having a second band gap smaller than the first band gap and being lattice matched with the upper first solar subcell; a third solar subcell adjacent to said second solar subcell and composed of a semiconductor material having a third band gap smaller than the second band gap and being lattice matched with the second solar subcell; and a fourth solar subcell adjacent to said third solar subcell and composed of a semiconductor material having a fourth band gap smaller than the third band gap; wherein the fourth subcell has a direct bandgap of greater than 0.75 eV.

A display device, having: a display panel; and a liquid crystal lens panel for switching a 2D display and a 3D display with each other, and for forming a parallax barrier by controlling the refractive index as in a cylindrical lens, wherein the liquid crystal lens panel has: a pair of transparent substrates; comb-shaped electrodes, which are formed on the liquid crystal layer side of one of the transparent substrates, run in the X direction and are aligned in the Y direction; flat common electrodes; and post spacers having light transmitting properties for holding the pair of transparent substrates at a predetermined distance, wherein the post spacers are fixed to one of the pair of transparent substrates on the liquid crystal side and are placed in regions away from the comb-shaped electrodes in a plane of the transparent substrate.

There is provided a light diffusing element, which has a high haze value and strong diffusibility, has backscattering suppressed, and is low in cost and excellent in productivity.A light diffusing element of the present invention includes: a matrix containing a resin component and an ultrafine particle component; and light diffusing fine particles dispersed in the matrix, wherein: refractive indices of the resin component, the ultrafine particle component, and the light diffusing fine particles satisfy the below-indicated expression (1); and the light diffusing element comprises a concentration adjusted area, which is formed in an outer portion of a vicinity of a surface of each of the light diffusing fine particles, and in which a weight concentration of the resin component decreases and a weight concentration of the ultrafine particle component increases with increasing distance from the light diffusing fine particles:|nP−nA|<|nP−nB|  (1)where nA represents the refractive index of the resin component of the matrix, nB represents the refractive index of the ultrafine particle component of the matrix, and nP represents the refractive index of the light diffusing fine particles.

External light is reflected due to a difference in refractive indices of a black matrix and a glass substrate. When the black matrix is a black resin, there is a difference in refractive indices of the black resin and a first substrate. Also, there is a difference in refractive indices of the colored layer and the first substrate. Therefore, external light is slightly reflected. There is a problem in that the reflected light reduces contrast. A structure in which one polarizing element having dichroism is interposed between a pair of substrates is employed, and a light interference layer is provided between a color filter and a glass substrate, whereby a difference in refractive indices is moderated to reduce light reflection.

The present invention provides an optical element which can reliably acquire a difference of refractive indices between a member under a photonic crystal layer and the crystal layer without using such a stacking technique as in conventional processes; a method for manufacturing the optical element; and a semiconductor laser device with the use of the optical element. The optical element has the first layer 500 and the second layer 400 formed on a substrate 100, wherein the second layer includes pores and has a refractive-index periodically changing structure in which a refractive index periodically changes in an in-plane direction; and the first layer has an oxidized region with a lower refractive index than the refractive index of the second layer, in a lower side of the pores of the second layer.

The present invention provides an optical element which can reliably acquire a difference of refractive indices between a member under a photonic crystal layer and the crystal layer without using such a stacking technique as in conventional processes; a method for manufacturing the optical element; and a semiconductor laser device with the use of the optical element. The optical element has the first layer 500 and the second layer 400 formed on a substrate 100, wherein the second layer includes pores and has a refractive-index periodically changing structure in which a refractive index periodically changes in an in-plane direction; and the first layer has an oxidized region with a lower refractive index than the refractive index of the second layer, in a lower side of the pores of the second layer.

A multi-layer stretched film has 251 or more alternating layers which consist of first layers and second layers, wherein the first layers are made of a polyester which contains (i) 5 to 50 mol % of a naphthoic acid component as a dicarboxylic acid component and (ii) a diol having an alkylene group with 2 to 10 carbon atoms as a diol component; and the second layers are made of a thermoplastic resin having an average refractive index of 1.50 to 1.60 and differences in refractive index among a uniaxial stretching direction, a direction orthogonal to the uniaxial stretching direction and a film thickness direction of 0.05 or less before and after stretching, and the film has specific reflectance characteristics for a P polarization component and an S polarization component.

This invention intends to develop a technique for forming an interlayer with excellent optical characteristics and to provide a photoelectric conversion device having high conversion efficiency. To realize this purpose, a series connection through an intermediate layer is formed in the thin-film photoelectric conversion device of the invention, and the interlayer is a transparent oxide layer in its front surface and n pairs of layers stacked therebehind (n is an integer of 1 or more), wherein each of the pair of layers is a carbon layer and a transparent oxide layer stacked in this order. Film thicknesses of each layer are optimized to improve wavelength selectivity and stress resistance while keeping the series resistance.An embodiment of the photoelectric conversion device is characterized in that; a transparent insulating substrate is located on the light incidence side, and a transparent conductive layer, at least one photoelectric conversion unit, a transparent electrode layer having electrical conductivity as typified by zinc oxide, a hard carbon layer having electrical conductivity as typified by diamond-like carbon, and a high reflecting electrode layer are stacked in this order on an opposite surface from a light incidence side of the transparent insulating substrate.

When it comes to configuring the lens array substrate on which a multistage lens array is formed, a first concavity which is formed of the concave surface is formed on a first surface which is formed of a substrate surface of one of several translucent substrates. In addition, on the substrate surface of one of the translucent substrates, a first lens layer, a first translucent layer, a second lens layer, a second translucent layer, a translucent protective layer, and a common electrode are stacked in order. The first translucent layer has the same refractive index as that of the first lens layer and the second lens layer. In addition, a refractive index of the protective layer is within a range between the refractive index of the second translucent layer and the refractive index of the common electrode.

A solar cell comprising a bulk germanium silicon growth substrate; a diffused photoactive junction in the germanium silicon substrate; and a sequence of subcells grown over the substrate, with the first grown subcell either being lattice matched or lattice mis-matched to the growth substrate.

Provided is a manufacturing method for an optical waveguide in which, when the optical waveguide is cut and a contour thereof is processed, accuracy of a cut position is improved by improving visibility of an alignment mark. An undercladding layer, cores, and alignment marks are formed on a front surface of a substrate. Then, an overcladding layer is formed using a photomask so as to cover the cores with the alignment marks being exposed. After the substrate is separated to manufacture an optical waveguide body, a cut position is located with reference to the alignment marks from a rear surface side of the undercladding layer, and the undercladding layer and the overcladding layer are cut to manufacture the optical waveguide.

A semiconductor laser device includes a lower cladding layer; an active layer disposed on the lower cladding layer; all upper cladding layer disposed on the active layer; a diffraction-grating layer disposed on the upper cladding layer, the diffraction-grating layer including periodic projections and recesses; and a buried layer disposed on the periodic projections and recesses in the diffraction-grating layer. In addition, the diffraction-grating layer and the buried layer constitute a diffraction grating. The lower cladding layer, the active layer, and the upper cladding layer constitute a first optical waveguide, the active layer constituting a first core region in the first optical waveguide. The upper cladding layer, the diffraction-grating layer, and the buried layer constitute a second optical waveguide, the diffraction-grating layer constituting a second core region in the second optical waveguide. Furthermore, the first optical waveguide and the second optical waveguide are optically coupled through the upper cladding layer.

The present invention may provide a structure capable of obtaining a higher difference in refractive indices between that of a transparent material and that of a cavity, than in the past, and a manufacturing method thereof, and the present invention provides a structure having a transparent material and an internal cavity which is formed by irradiating said transparent material with a pulse laser beam having a pulse width of 10×10−12 seconds or less, and wherein refractive index of said transparent material at d line is nd≧1.3

The present disclosure provides an optical waveguide capable of enhancing the suppression of crosstalk. This optical waveguide includes: under claddings; cores for light propagation arranged in side-by-side relation on surfaces of the respective under claddings; over claddings covering the cores; and a light absorbing part provided between adjacent ones of the cores and adjacent to light exit member connecting portions for connection to light exit members, the light exit member connecting portions being disposed in first end portions of the adjacent cores, the light absorbing part being in non-contacting relationship with the cores. The light absorbing part contains a light absorbing agent having an ability to absorb light exiting the light exit members. The optical waveguide is produced on a surface of a substrate.

A second film that contains a substance that secures the conductivity of conductive particles is formed on a first film that contains the conductive particles. The first film and the second film are sintered at the same time. Thus, a conductive anti-reflection film having a sufficiently low surface resistance with a sufficient transmissivity for a high transparency can be obtained with high cost performance. When the conductive anti-reflection film is used for a cathode ray tube, it can almost prevent the AEF (Alternating Electric Field), display a picture in high quality, and be excellent in cost performance.

A manufacturing method of a photonic crystal is provided. In the method, a high-refractive-index material is conformally deposited on an exposed portion of a periodic template composed of a low-refractive-index material by an atomic layer deposition process so that a difference in refractive indices or dielectric constants between the template and adjacent air becomes greater, which makes it possible to form a three-dimensional photonic crystal having a superior photonic bandgap. Herein, the three-dimensional structure may be prepared by a layer-by-layer method.

In an InGaN-based nitride semiconductor optical device having a long wavelength (440 nm or more) equal to or more than that of blue, the increase of a wavelength is realized while suppressing In (Indium) segregation and deterioration of crystallinity. In the manufacture of an InGaN-based nitride semiconductor optical device having an InGaN-based quantum well active layer including an InGaN well layer and an InGaN barrier layer, a step of growing the InGaN barrier layer includes: a first step of adding hydrogen at 1% or more to a gas atmosphere composed of nitrogen and ammonia and growing a GaN layer in the gas atmosphere; and a second step of growing the InGaN barrier layer in a gas atmosphere composed of nitrogen and ammonia.

A multijunction solar cell including a metamorphic layer, and particularly the design and specification of the composition, lattice constant, and band gaps of various layers above the metamorphic layer in order to achieve reduction in “bowing” of the semiconductor wafer caused by the lattice mismatch of layers associated with the metamorphic layer.

In the opto-electronic integrated circuit, an optical waveguide in which a sapphire substrate for an SOS substrate is formed as a lower clad and a silicon film is formed as a core, an electronic integrated circuit formed in the silicon film, and grooves for fixing optical fibers are formed monolithically. Further, a photodiode array and a laser diode array are mounted on a hybrid basis. Since the lower clad of the optical waveguide is used as the sapphire substrate and the core is used as the silicon film, a difference in refractive index can be made large sufficiently, thus resulting in thinning of the silicon film. It is therefore possible to shorten the time required to process the core and the like. Further, since the electronic integrated circuit is formed on the sapphire substrate, the high-frequency characteristics are enhanced.

A multijunction solar cell and its method of fabrication, having an upper first solar subcell composed of a semiconductor material including aluminum and having a first band gap; a second solar subcell adjacent to said first solar subcell and composed of a semiconductor material having a second band gap smaller than the first band gap and being lattice matched with the upper first solar subcell; a third solar subcell adjacent to said second solar subcell and composed of a semiconductor material having a third band gap smaller than the second band gap and being lattice matched with the second solar subcell; a first and second DBR structure adjacent to the third solar subcell; and a fourth solar subcell adjacent to the DBR structures and lattice matched with said third solar subcell and composed of a semiconductor material having a fourth band gap smaller than the third band gap; wherein the fourth subcell has a direct bandgap of greater than 0.75 eV.

A multijunction solar cell including a metamorphic layer, and particularly the design and specification of the composition, lattice constant, and band gaps of various layers above the metamorphic layer in order to achieve reduction in “bowing” of the semiconductor wafer caused by the lattice mismatch of layers associated with the metamorphic layer.