45results about How to "Refractive index difference" patented technology

Diffuse reflective materials proximate to a structure formed by thermally induced phase separation of a thermoplastic polymer and a diluent providing enhanced flexibility and reflectivity especially in the visible wavelengths of 380-730 nanometers are described. Such materials find a wide variety of application among combinations with other reflective layers. The diffuse reflective articles are useful in backlight units of liquid crystal displays, lights, copy machines, projection system displays, facsimile apparatus, electronic blackboards, diffuse white standards, photographic lights and the like.

An optical adjusting member according to the invention includes a base member, a plurality of lenses, and a light diffusion layer. The base member has optical transparency. The plurality of lenses are formed on the base member. The light diffusion layer is formed on the plurality of lenses, and at least top edge parts of the lenses are buried in the light diffusion layer. In the optical adjusting member according to the invention, at least the top edge parts of the plurality of lenses are buried in the light diffusion layer and therefore the lenses are less susceptible to damages. The optical adjusting member according to the invention has a light collecting function by the lenses and a diffusion function by the light diffusion layer.

A display device, having: a display panel; and a liquid crystal lens panel for switching a 2D display and a 3D display with each other, and for forming a parallax barrier by controlling the refractive index as in a cylindrical lens, wherein the liquid crystal lens panel has: a pair of transparent substrates; comb-shaped electrodes, which are formed on the liquid crystal layer side of one of the transparent substrates, run in the X direction and are aligned in the Y direction; flat common electrodes; and post spacers having light transmitting properties for holding the pair of transparent substrates at a predetermined distance, wherein the post spacers are fixed to one of the pair of transparent substrates on the liquid crystal side and are placed in regions away from the comb-shaped electrodes in a plane of the transparent substrate.

The present invention provides an optical element which can reliably acquire a difference of refractive indices between a member under a photonic crystal layer and the crystal layer without using such a stacking technique as in conventional processes; a method for manufacturing the optical element; and a semiconductor laser device with the use of the optical element. The optical element has the first layer 500 and the second layer 400 formed on a substrate 100, wherein the second layer includes pores and has a refractive-index periodically changing structure in which a refractive index periodically changes in an in-plane direction; and the first layer has an oxidized region with a lower refractive index than the refractive index of the second layer, in a lower side of the pores of the second layer.

A multijunction solar cell and its method of fabrication, having an upper first solar subcell composed of a semiconductor material including aluminum and having a first band gap; a second solar subcell adjacent to said first solar subcell and composed of a semiconductor material having a second band gap smaller than the first band gap and being lattice matched with the upper first solar subcell; a third solar subcell adjacent to said second solar subcell and composed of a semiconductor material having a third band gap smaller than the second band gap and being lattice matched with the second solar subcell; a first and second DBR structure adjacent to the third solar subcell; and a fourth solar subcell adjacent to the DBR structures and lattice matched with said third solar subcell and composed of a semiconductor material having a fourth band gap smaller than the third band gap; wherein the fourth subcell has a direct bandgap of greater than 0.75 eV.

A light diffusing element of the present invention includes: a matrix containing a resin component and an ultrafine particle component; and light diffusing fine particles dispersed in the matrix, wherein refractive indices of the resin component, the ultrafine particle component, and the light diffusing fine particles satisfy the below-indicated expression (1); and the light diffusing element comprises a concentration adjusted area, which is formed in an outer portion of a vicinity of a surface of each of the light diffusing fine particles, and in which a weight concentration of the resin component decreases and a weight concentration of the ultrafine particle component increases with increasing distance from the light diffusing fine particles:|np−nA|<|np−nB|  (1)where nA represents the refractive index of the resin component of the matrix, nB represents the refractive index of the ultrafine particle component of the matrix, and np represents the refractive index of the light diffusing fine particles.

Provided is a manufacturing method for an optical waveguide in which, when the optical waveguide is cut and a contour thereof is processed, accuracy of a cut position is improved by improving visibility of an alignment mark. An undercladding layer, cores, and alignment marks are formed on a front surface of a substrate. Then, an overcladding layer is formed using a photomask so as to cover the cores with the alignment marks being exposed. After the substrate is separated to manufacture an optical waveguide body, a cut position is located with reference to the alignment marks from a rear surface side of the undercladding layer, and the undercladding layer and the overcladding layer are cut to manufacture the optical waveguide.

An organic light emitting display device includes a substrate, a first transistor disposed on the substrate in the opaque region, a second transistor disposed on the substrate in the opaque region, the second transistor being adjacent to the first transistor along a first direction, and a capacitor disposed on the substrate in the opaque region, the capacitor being adjacent to the first transistor along a second direction different from the first direction. Here, the capacitor may include a first capacitor electrode, a dielectric structure including silicon oxynitride and a second capacitor electrode.

External light is reflected due to a difference in refractive indices of a black matrix and a glass substrate. When the black matrix is a black resin, there is a difference in refractive indices of the black resin and a first substrate. Also, there is a difference in refractive indices of the colored layer and the first substrate. Therefore, external light is slightly reflected. There is a problem in that the reflected light reduces contrast. A structure in which one polarizing element having dichroism is interposed between a pair of substrates is employed, and a light interference layer is provided between a color filter and a glass substrate, whereby a difference in refractive indices is moderated to reduce light reflection.

A semiconductor laser device includes a lower cladding layer; an active layer disposed on the lower cladding layer; all upper cladding layer disposed on the active layer; a diffraction-grating layer disposed on the upper cladding layer, the diffraction-grating layer including periodic projections and recesses; and a buried layer disposed on the periodic projections and recesses in the diffraction-grating layer. In addition, the diffraction-grating layer and the buried layer constitute a diffraction grating. The lower cladding layer, the active layer, and the upper cladding layer constitute a first optical waveguide, the active layer constituting a first core region in the first optical waveguide. The upper cladding layer, the diffraction-grating layer, and the buried layer constitute a second optical waveguide, the diffraction-grating layer constituting a second core region in the second optical waveguide. Furthermore, the first optical waveguide and the second optical waveguide are optically coupled through the upper cladding layer.

A multi-layer stretched film has 251 or more alternating layers which consist of first layers and second layers, wherein the first layers are made of a polyester which contains (i) 5 to 50 mol % of a naphthoic acid component as a dicarboxylic acid component and (ii) a diol having an alkylene group with 2 to 10 carbon atoms as a diol component; and the second layers are made of a thermoplastic resin having an average refractive index of 1.50 to 1.60 and differences in refractive index among a uniaxial stretching direction, a direction orthogonal to the uniaxial stretching direction and a film thickness direction of 0.05 or less before and after stretching, and the film has specific reflectance characteristics for a P polarization component and an S polarization component.

A manufacturing method of a photonic crystal is provided. In the method, a high-refractive-index material is conformally deposited on an exposed portion of a periodic template composed of a low-refractive-index material by an atomic layer deposition process so that a difference in refractive indices or dielectric constants between the template and adjacent air becomes greater, which makes it possible to form a three-dimensional photonic crystal having a superior photonic bandgap. Herein, the three-dimensional structure may be prepared by a layer-by-layer method.

In an InGaN-based nitride semiconductor optical device having a long wavelength (440 nm or more) equal to or more than that of blue, the increase of a wavelength is realized while suppressing In (Indium) segregation and deterioration of crystallinity. In the manufacture of an InGaN-based nitride semiconductor optical device having an InGaN-based quantum well active layer including an InGaN well layer and an InGaN barrier layer, a step of growing the InGaN barrier layer includes: a first step of adding hydrogen at 1% or more to a gas atmosphere composed of nitrogen and ammonia and growing a GaN layer in the gas atmosphere; and a second step of growing the InGaN barrier layer in a gas atmosphere composed of nitrogen and ammonia.

A multijunction solar cell and its method of fabrication, having an upper first solar subcell composed of a semiconductor material including aluminum and having a first band gap; a second solar subcell adjacent to said first solar subcell and composed of a semiconductor material having a second band gap smaller than the first band gap and being lattice matched with the upper first solar subcell; a third solar subcell adjacent to said second solar subcell and composed of a semiconductor material having a third band gap smaller than the second band gap and being lattice matched with the second solar subcell; a first and second DBR structure adjacent to the third solar subcell; and a fourth solar subcell adjacent to the DBR structures and lattice matched with said third solar subcell and composed of a semiconductor material having a fourth band gap smaller than the third band gap; wherein the fourth subcell has a direct bandgap of greater than 0.75 eV.

A multijunction solar cell including a metamorphic layer, and particularly the design and specification of the composition, lattice constant, and band gaps of various layers above the metamorphic layer in order to achieve reduction in “bowing” of the semiconductor wafer caused by the lattice mismatch of layers associated with the metamorphic layer.