Distributed bragg reflector structures in multijunction solar cells

Abstract

A multijunction solar cell and its method of fabrication, having an upper first solar subcell composed of a semiconductor material including aluminum and having a first band gap; a second solar subcell adjacent to said first solar subcell and composed of a semiconductor material having a second band gap smaller than the first band gap and being lattice matched with the upper first solar subcell; a third solar subcell adjacent to said second solar subcell and composed of a semiconductor material having a third band gap smaller than the second band gap and being lattice matched with the second solar subcell; a first and second DBR structure adjacent to the third solar subcell; and a fourth solar subcell adjacent to the DBR structures and lattice matched with said third solar subcell and composed of a semiconductor material having a fourth band gap smaller than the third band gap; wherein the fourth subcell has a direct bandgap of greater than 0.75 eV.

Description

REFERENCE TO RELATED APPLICATIONS[0001]This application is a continuation of U.S. patent application Ser. No. 15 / 376,195 filed Dec. 12, 2016.[0002]This application is related to co-pending U.S. patent application Ser. No. 14 / 660,092 filed Mar. 17, 2015, which is a division of U.S. patent application Ser. No. 12 / 716,814 filed Mar. 3, 2010, now U.S. Pat. No. 9,018,521; which was a continuation in part of U.S. patent application Ser. No. 12 / 337,043 filed Dec. 17, 2008.[0003]This application is also related to co-pending U.S. patent application Ser. No. 13 / 872,663 filed Apr. 29, 2013, now U.S. Pat. No. 10,541,349 which was also a continuation-in-part of application Ser. No. 12 / 337,043, filed Dec. 17, 2008.[0004]This application is also related to U.S. patent application Ser. No. 14 / 828,197, filed Aug. 17, 2015.[0005]All of the above related applications are incorporated herein by reference in their entirety.BACKGROUND OF THE INVENTIONField of the Invention[0006]The present disclosure re...

AI Technical Summary

Benefits of technology

[0012]It is an object of the present disclosure to provide increased photoconversion efficiency in a multijunction solar cell for space applications by incorporating a plurality of distributed Bragg reflector structures between two adjacent subcells in the multijunction solar cell.

[0037]In some embodiments, the difference in refractive indices between alternating layers is maximized in order to minimize the number of periods required to achieve a given reflectivity, and the thickness and refractive index of each period determines the stop band and its limiting wavelength.

Problems solved by technology

Compared to silicon, III-V compound semiconductor multijunction devices have greater energy conversion efficiencies and generally more radiation resistance, although they tend to be more complex to properly specify and manufacture.

However, in reality, changing a material parameter that increases the voltage may result in a decrease in current, and therefore a lower power output.

Such material design parameters are interdependent and interact in complex and often unpredictable ways, and for that reason are not “result effective” variables that those skilled in the art confronted with complex design specifications and practical operational considerations can easily adjust to optimize performance.

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