57results about How to "Reduce uneven thickness" patented technology

A method of controlling the drug release rate of a drug coated endovascular stent by depositing a drug material layer on the stent and then modifying the drug material using gas cluster ion beam irradiation to create a carbon matrix with interstices containing the original drug. The rate at which the drug elutes through the interstices can be controlled by processing parameters. Multiple layers may be employed to create time varying release rates.

The invention discloses a plaster baffle plate for plastering polar plates, which is characterized in that: the plaster baffle plate is an integral plate (1), on which a mounting hole (7) is provided, and in the plate (1) There is a roller groove (5) on the front, and the arc surface of the roller groove (5) is concentric with the roller inside the paste bucket, and this arc surface is close to the outer surface of the roller, and the inner surface of the roller groove (5) The paste outlet (2) is opened, and the side of the paste outlet (2) is an inclined plane (3). The paste retaining plate of the present invention assists the plastering of the polar plate, the paste output pressure and the leakage of the lead paste from the frame of the polar plate are greatly reduced, almost negligible, the quality and appearance of the polar plate are improved, and the performance of the battery is correspondingly improved.

The present invention provides a high frequency module having a base substrate unit ( 2 ) which has its uppermost layer planarized to form a buildup-forming surface ( 16 ), a high frequency circuit unit ( 3 ) having multiple wiring layers which are formed on the base substrate unit ( 2 ), each of which layers has a wiring pattern and film elements formed on a dielectric insulating layer thereof, whose uppermost wiring layer ( 17 ) has plural lands ( 22 ) and ground patterns ( 20 ) formed thereon together with the wiring pattern and inductor elements ( 19 ), and a semiconductor chip ( 4 ) mounted on the wiring layer ( 17 ) of the high frequency circuit unit ( 3 ). Transmission lines ( 24 ) to connect the inductor elements ( 19 ) and lands ( 22 ) which are formed on the wiring layer ( 17 ) are directed within hollowed pattern regions ( 20 c) formed at the ground pattern ( 20 ) to constitute coplanar type transmission lines.

The present invention provides a manufacturing method of a compressible printing layer, comprising a vulcanizing step comprising a first heating process in which one surface of a compressible printing layer including an unvulcanized compressible layer containing microcapsules is heated by bringing the one surface of the compressible printing layer into contact with the surface of at least one heated metal roll while applying tension to the compressible printing layer, and a second heating process in which the other surface of the compressible printing layer is heated by bringing the other surface of the compressible printing layer into contact with the surface of at least one heated metal roll while applying tension to the compressible printing layer.

A mask including a transparent substrate, a semi-transparent layer and a film layer is provided. The transparent substrate at least has a first region, a second region and a third region. The semi-transparent layer covers the second region and the third region of the transparent substrate and exposes the first region. The film layer covers the halftone layer disposed at the third region, to make the transmittance of the third region lower than that of the second region. The halftone layer and the film can be made of phase shift layers, to form a phase shift mask. Besides, several fabrication methods of the mask are also disclosed to form the above-mentioned mask.

A power semiconductor device according to the present invention, which has a termination structure in which a field plate is provided on an insulating film filled in a recessed region formed in a semiconductor substrate and includes a plurality of unit cells connected in parallel, includes: a gate wiring region in which gate wiring electrically connected to each gate electrode of the plurality of unit cells is provided; and a gate pad region electrically connected to the gate wiring region, wherein the gate wiring region is disposed on the insulating film filled in a recessed region formed in the semiconductor substrate.

Provided is an imprinting apparatus that forms patterns sequentially on a plurality of areas of a substrate by using a mold and imprint material. The apparatus includes a moving unit configured to move along a horizontal plane while carrying the substrate, and an adjusting unit configured to adjust an inclination of the mold with respect to the substrate. The adjusting unit adjusts the inclination of the mold with respect to the substrate based on information related to a state of the imprint material provided on the substrate and information related to an order of pattern formation. The information related to the state of the imprint material on the substrate is variable with the movement of the moving unit.

The invention relates to a shell of a ring-in-ring casting of K4169 high-temperature alloy. The shell comprises a shell surface layer and a multi-layer type shell back layer. The shell surface layer is formed by shell surface layer slurry and surface layer stuccoing materials in a solidification combination manner. The grain size of zircon powder for preparing the slurry as in the shell surface layer slurry ranges from 300 meshes to 1, 250 meshes. The aggregate of a surface layer stuccoing layer is the zircon powder, and the grain size of the aggregate ranges from 100 meshes to 150 meshes. Theshell back layer is formed by shell back layer slurry and back layer stuccoing materials in a solidification combination manner. The grain size of melted quartz powder and the grain size of melted quartz sand for preparing the slurry as in the shell back layer slurry range from 100 meshes to 1, 250 meshes. The aggregate of the back layer stuccoing layer is the quartz sand with the grain size ranging from 10 meshes to 50 meshes. Because the zircon powder is used as the surface layer slurry of the shell, and the melted quartz with an extremely small expansion coefficient is used as the back layer slurry, the coefficient of thermal expansion of an obtained shell is small, the grain size of used powder is strictly controlled, and the difference between the coefficient of thermal expansion ofthe shell surface layer and the coefficient of thermal expansion of the shell back layer is narrowed down.

The invention discloses a graphite plate base, and belongs to the technical field of photoelectrons. The graphite plate base comprises a base body and multiple pockets for growing epitaxial wafers, wherein the pockets comprise a first pocket and multiple second pockets; the first pocket is arranged at the center position of the base body; the second pockets are circumferentially distributed around the center position of the base body; the depth of the first pocket is greater than that of each second pocket; the first pocket is provided with a bottom surface and an annular side wall; and the bottom surface of the first pocket comprises an annular plane connected with the annular side wall of the first pocket and a curved surface located on the bottom surface of the first pocket. By enabling the depth of the first pocket to be greater than that of each second pocket, in an epitaxial wafer growing process, a distance between the epitaxial wafer in the first pocket and a hole, which is used for conveying a raw material, in a cover plate is increased, so that the raw material can be dispersed in the graphite plate base more easily, aggregation of the raw material is avoided, and the problem of non-uniform thickness of the epitaxial wafer growing in the first pocket can be relieved.

The invention discloses ZrO2-contained vehicle TWIP steel continuous casting crystallizer protection slag and application thereof. The protection slag consists of the following oxide components in percentage by mass: 20-40% of CaO, 8-20% of SiO, 13-30% of Al2O3, 5-12% of Na2O, 1-6% of Li2O, 3-16% of BaO, 2-8% of MnO2, 4-13% of F-, 1.5-3.5% of ZrO2, 1.3-2.4 of (CaO+BaO) / Al2O3, 1.9-2.5 of CaO / SiO2, and 1.6-2.2 of Al2O3 / SiO2. The protection slag can be preferably applied to the continuous casting process of TWIP steel with 15-25 mass% of Mn and 2-4 mass% of Al.