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Method for growing large-size silicon carbide single crystal

A silicon carbide single crystal, large-size technology, applied in chemical instruments and methods, single crystal growth, crystal growth and other directions, can solve the problem of large-size silicon carbide single crystals without providing process parameters, and reduce the uneven heat generation. The effect of low overall cost and simple method

Inactive Publication Date: 2020-02-11
济宁天岳新材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the crystallization process is subject to problems such as the uniformity of the temperature field and the temperature control and pressure control of the entire field, in the prior art, no specific and feasible process parameters are provided to achieve the purpose of obtaining a large-sized silicon carbide single crystal that meets the requirements

Method used

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  • Method for growing large-size silicon carbide single crystal
  • Method for growing large-size silicon carbide single crystal
  • Method for growing large-size silicon carbide single crystal

Examples

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Embodiment 1

[0037] Example 1: The specific structure of this application for growing a large-sized silicon carbide single crystal growth device:

[0038] Such as figure 1 As shown, the silicon carbide single crystal growth device used to grow large-sized silicon carbide single crystals includes: a crystal growth chamber, a first quartz tube 2, an induction coil 3, and a second quartz tube 4. The crystal growth chamber is used for growing large-sized silicon carbide single crystals. Crystal; an induction coil 3, which is wound and arranged outside the first quartz tube 2, is used to heat the crystal growth chamber, and increases the magnetic field generated by the induction coil 3 by reducing the turn spacing of the coil and increasing the ratio of the coil height to the coil diameter uniformity, thereby improving the distribution uniformity of the temperature field in the crystal growth chamber; the induction coil 3 also rotates around the first quartz tube 2 through the provided rotating...

Embodiment 2

[0046] Example 2: Growth of silicon carbide single crystal

[0047] According to an embodiment of the present application, a growth method for growing a large-sized silicon carbide single crystal includes:

[0048] (1) Assembly stage: place raw materials and seed crystals in the crystal growth chamber, i.e. the graphite crucible 1, and place insulation felts on the bottom and sides of the growth device, and replace the atmosphere in the crystal growth chamber with a protective gas atmosphere;

[0049] (2) Heating and heating stage: the growth device is evacuated, and then a protective gas is introduced, and the absolute pressure in the growth device is maintained at 0.8×10 4 -1.2×10 4 Pa; the control system controls the power supply of the intermediate frequency power supply, and at the same time turns on the temperature measuring device, and starts to rotate the induction coil, and the induction coil rotates at a speed of 3-30r / min until the crystal growth chamber reaches 18...

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Abstract

The invention provides a method for growing a large-size silicon carbide single crystal. The method includes the step of heating a crystal growth chamber by using an induction coil. In the single crystal growth process, the rotation of the induction coil is controlled by a rotation mechanism, and the spacing of turns of the induction coil is reduced and the ratio of the height of the coil to the diameter of the coil is increased to control the uniformity of a temperature field in the crystal growth chamber. Through optimization of the setting of the induction coil, the uniformity of a magneticfield generated by the induction coil is improved, temperatures around the crystal growth chamber are as uniform as possible, the phenomenon of uneven thickness around the crystal is effectively reduced, the collapse, happening on a material surface, in one direction is effectively reduced, the erosion rates of the crystal growth chamber in all directions are the same, the number of use times ofconsumables is increased, the stability of crystal growth is improved, uneven heat generation of a crucible is reduced, and the uniformity of crystal growth is improved.

Description

technical field [0001] The invention relates to a method for growing a large-size silicon carbide single crystal, belonging to the technical field of crystal growth. Background technique [0002] Silicon carbide (SiC) single crystal has excellent semiconductor physical properties such as high thermal conductivity, high breakdown voltage, extremely high carrier mobility, and high chemical stability, and can be made into high-frequency semiconductors that work under high temperature and strong radiation conditions. , High-power electronic devices and optoelectronic devices have great application value in the fields of national defense, high technology, industrial production, power supply, and transformation, and are regarded as the third-generation wide-bandgap semiconductor materials with great development prospects. [0003] Although physical meteorological transport (PVT) growth of silicon carbide crystals has made great progress in recent years, the stability of the grown ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/36C30B23/00
CPCC30B23/00C30B29/36
Inventor 方帅高超刘圆圆周敏张虎姜岩鹏黄治成
Owner 济宁天岳新材料科技有限公司
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