51results about How to "Reduce the number of manufacturing processes" patented technology

The invention provides a TFT backboard manufacturing method and structure suitable for AMOLED. The method comprises the following steps: 1, providing a baseboard (10) and depositing a buffer layer (20); 2, forming a source layer (30) and a gate insulation layer (40) on the buffer layer (20) in sequence; 3, carrying out patterning processing on the gate insulation layer (40) to form a recession part (401); 4, forming a gate (50) for switching a thin film transistor and a gate (60) for driving the thin film transistor, wherein the gate (50) for switching the thin film transistor is positioned at the recession part (401); 5, depositing an interlayer insulation layer (70). According to the method, a single-layer gate insulation layer with height different is manufactured, so that the manufacturing process of the TFT backboards is simplified, the subthreshold swing of the gate (60) for driving the thin film transistor and the grey scale switching and control properties of the AMOLED panes are improved.

A light deflector includes a fixing portion, a movable portion and a reinforcing member. The movable portion includes a mirror portion for deflecting light by swinging about a predetermined swing axis, a torsion bar fixedly supported on the fixing portion and having an axis serving as the swing axis, and a supporting body configured to support the mirror portion and fixed to the torsion bar. The supporting body includes a contact surface to be held in contact with the mirror portion and a non-contact surface opposite to the contact surface. The reinforcing member is provided only on the non-contact surface out of the contact surface and the non-contact surface of the supporting body and reinforces the supporting body and adjusts a center of gravity of the movable portion so that the center of gravity of the movable portion is located on the axis.

A manufacturing method for a wiring circuit board includes the steps of: forming a board on a surface of a metal layer directly or indirectly through an etching barrier layer; forming an insulating film on the surface of the metal layer; polishing the insulating film to an extent to which a top face of the bump is exposed; and forming a solder ball on the top face of the bump.

Provided is a semiconductor device wherein a gate electrode (14) of a thin film transistor (100) is formed of a single conductive film, and a semiconductor layer (10) is provided with a first low-concentration impurity region, which is arranged between the channel region (12) and the source region (15), and has an impurity concentration lower than the impurity concentrations of the source region and the drain region (15), and a second low-concentration impurity region, which is arranged between the channel region (12) and the drain region (15), and has an impurity concentration lower than the impurity concentrations of the source region and the drain region (15). A region (16a), which is one of the first and the second low-concentration impurity regions, entirely overlaps with the gate electrode (14), and a region (16b), which is the other one of the first and the second low-concentration impurity regions, does not overlap with the gate electrode (14).

A luneberg lens, which is configured by combining a plurality of lens parts, has a problem on keeping of a combined condition of lens parts and securement of good moisture prevention, and displacement of lens parts not only becomes a cause of cost-up but also has a bad influence on an electric performance, and furthermore, intrusion of moisture and humidity deteriorates an electric performance, and therefore, these problems are solved by a simple and inexpensive method. A lens portion 2, which is configured by combining lens parts of spherical core and spherical shell-like resin foams, is configured by a luneberg lens which is sealed by a synthetic resin film 3 which is formed along a surface of that lens portion 2 and in which a thickness is 100 m or less and of which own relative dielectric constant is higher than a relative dielectric constant of the outermost layer of the above-mentioned lens portion.

The LCD panel 101 of the present invention includes a panel side wiring 110 that electrically connects mutually adjacent source side drivers 102, 102 and a capacitor 106 connected to the panel side wiring 110 . Therefore, by collectively fabricating the capacitor 106 on the LCD panel 101 together with LCD pixels in a step of fabricating the LCD pixels on the LCD panel 101 , it becomes unnecessary to mount the capacitor 106 on the source side driver 102 , and the cost of the source side driver 102 can be reduced.

In a DRAM memory cell including an access Tr and a cell capacitor, a depletion type MOSFET is used for each of the access Tr and the cell capacitor. Thus, an operation margin can be increased and the number of necessary power supplied can be reduced, compared to a known DRAM.

The invention provides a new light-absorbing material that can increase the conversion efficiency of a solar cell. Further disclosed is a photoelectric conversion element using same. The light-absorbing material comprises a nitride compound semiconductor-which is a compound semiconductor represented by Al1-yGayN (0 <= y <= 1) of which a portion of the Al and / or Ga has been replaced by a 3d transition metal-has at least one impurity band, and has an optical absorption coefficient of at least 1000 cm-1 in the entire wavelength region that is between 300 nm and 1500 nm, inclusive.

A hard-coated antiglare film is provided that has high hardness, high scratch resistance, and good antiglare properties. In the hard-coated antiglare film of the present invention including a transparent plastic film substrate, a hard-coating layer containing fine particles is formed on at least one surface of the transparent plastic film substrate, the hard-coating layer has a thickness in the range of 15 to 30 mum, the fine particles have a weight average particle size of 30 to 75% of a thickness of the hard-coating layer, the average tilt angle thetaa of the unevenness of the hard-coating layer surface is in the range of 0.4 DEG to 1.5 DEG , and the hard-coating layer is formed using a resin for forming the hard-coating layer containing three specific resin components.

Provided are a tripod-type constant-velocity universal joint which is capable of reducing weight of a journal raw profile to thereby reduce the number of manufacturing steps and in which forging of journals is facilitated, and a method of manufacturing the same. A leading end corner portion (32) of a journal raw profile (54) is held with use of a die (X) and forged. In this case, in a state in which a relief portion (35) is provided on a leading end side of the die (X), a part including an elliptically longitudinal side of the leading end corner portion (32) of the journal raw profile (54) is held with use of the die (X). In the die (X), inner walls of a part at which the leading end corner portion (32) of the journal raw profile (54) is held constitute tapering surfaces (33). By the forging, at the part including the elliptically longitudinal side relatively on a leading end portion side of an outer peripheral surface (30) of each of journals (4), edge portions (21) reducing a lateral sectional area of each of the journals (4) toward a leading end side thereof are formed, and tapered surfaces (20) are formed on the leading end side of the edge portions (21). Centering on each of the journals (4) is performed by causing two points on an elliptically longitudinal side of the edge portions (21) to abut against a centering jig.

The invention provides a heater including a flexible printed wiring board and a method of manufacturing the same. A heater includes: a flexible printed wiring board including a base film and a metal foil provided on one side of the base film; a heater circuit portion that is formed from the metal foil and generates heat when energized; and a heat conductive foil portion that is formed from the metal foil at a position away from the heater circuit portion and is maintained in a non-energized state.