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Peeling method and method for manufacturing display device using the peeling method

A technology for a display device and a manufacturing method, applied to identification devices, lighting devices, instruments, etc., to achieve the effects of unbreakable, simplified manufacturing process, and light weight

Inactive Publication Date: 2006-02-22
SEMICON ENERGY LAB CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, if a high-performance polysilicon film is used on the active layer of the TFT, high-temperature processing of several hundreds of degrees Celsius is necessary in the manufacturing process, so it cannot be directly formed on a plastic film.

Method used

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  • Peeling method and method for manufacturing display device using the peeling method
  • Peeling method and method for manufacturing display device using the peeling method
  • Peeling method and method for manufacturing display device using the peeling method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0049] This embodiment describes an example of a specific peeling process when peeling and transferring the state after formation of the light-emitting element and liquid crystal element as the layer to be peeled, and manufacturing a light-emitting device that emits light from the top surface using the peeling process of the present invention.

[0050] like image 3 As shown in (A), the metal film 201 is formed on the first substrate 200 . In this embodiment, a glass substrate of about 0.5 to 1.0 mm is used as the first substrate. As the metal film, an alloy material or compound composed of elements selected from W, Ti, Ta, Mo, Nd, Ni, Co, Zr, Zn, Ru, Rh, Pd, Os, Ir or mainly composed of the above elements can be used. Single layers of materials or their laminates. As a method for producing the metal film, a sputtering method can be used to form the metal film on the first substrate using a metal as a target. In addition, the film thickness of the metal film is set to be 10...

Embodiment approach 2

[0083] In this embodiment, the lower surface is formed by using the peeling process when the adhesive is controlled by applying ultraviolet rays and heat to the state after the formation of the light-emitting element and the liquid crystal element as the layer to be peeled, and performing peeling and transfer. An example of a light-emitting device that emits light will be described, and descriptions of steps and materials that are the same as those in Embodiment 1 will be omitted.

[0084] First, it is the same as Embodiment 1, until the protective film 215 is formed ( Figure 4 (A)). However, since it is a light-emitting device that emits light from the bottom surface, it is necessary to use a light-transmitting material for the electrode 204 . In addition, a stress relief member may be provided, but it is not particularly provided in this embodiment.

[0085] like Figure 4 As shown in (B), next, the second substrate 220 is fixed on the protective film 215 using the doubl...

Embodiment approach 3

[0092] In this embodiment mode, a description will be given of a method of manufacturing a light-emitting device in which a semiconductor element, an electrode, an insulating film, and the like are formed as a layer to be peeled, and then peeled and transferred.

[0093] like Figure 12 As shown in (A), the metal film 201 is formed on the first substrate 200 . In this embodiment, a glass substrate of about 0.5 to 1.0 mm is used as the first substrate. As the metal film, an alloy material or compound material composed of elements selected from W, Ti, Ta, Mo, Nd, Ni, Co, Zr, Zn, Ru, Rh, Pd, Os, Ir or mainly composed of the above elements can be used. composed of single layers or their stacks. A sputtering method is used as a method for producing the metal film, and a metal can be used as a target to be formed on the first substrate. In addition, the film thickness of the metal film is set to be 10 nm to 200 nm, preferably 50 nm to 75 nm.

[0094] If an alloy of the above met...

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Abstract

The present invention provides a simplifying method for a peeling process as well as peeling and transcribing to a large-size substrate uniformly. A feature of the present invention is to peel a first adhesive and to cure a second adhesive at the same time in a peeling process, thereby to simplify a manufacturing process. In addition, the present invention is to devise the timing of transcribing a peel-off layer in which up to an electrode of a semiconductor are formed to a predetermined substrate. In particular, a feature is that peeling is performed by using a pressure difference in the case that peeling is performed with a state in which plural semiconductor elements are formed on a large-size substrate.

Description

technical field [0001] The present invention relates to a peeling method of a functional thin film, in particular to a peeling method of a film and a layer having various elements. The present invention also relates to a transfer method for adhering a peeled film to a film substrate, a semiconductor device having a thin film transistor (hereinafter referred to as TFT) formed by the transfer method, and a method for manufacturing the same. technical background [0002] In recent years, attention has been paid to a technique of forming a TFT using a semiconductor thin film (with a thickness of several to several hundreds of nm) formed on a substrate having an insulating surface. TFTs are widely used in electronic devices such as ICs and electro-optical devices, and are being developed especially as switching elements and drive circuits for display devices. [0003] In such display devices, glass substrates and quartz substrates are widely used, but there are disadvantages tha...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G09F9/30H05B33/14G02F1/1368H01L27/12
Inventor 山崎舜平高山彻丸山纯矢后藤裕吾大野由美子
Owner SEMICON ENERGY LAB CO LTD
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