40results about How to "Reduce soft error rate" patented technology

A current-assisted magnetic recording write head has an electrically conductive layer in the write gap between the write pole and the trailing shield. Electrical circuitry directs current between the write pole and the trailing shield, through the conductive layer in the write gap. The current through the conductive layer generates an Ampere field substantially orthogonal to the magnetization in the write pole to assist magnetization switching of the write pole. The conductive layer is wider in the cross-track direction than the trailing edge of the write pole and may extend beyond the write pole side gaps so as to be in contact with both the side shields and the trailing shield. The conductive layer may have substantially the same along-the-track thickness across its width or it may have a thicker central region at the write pole trailing edge and thinner side regions.

The invention discloses a static random access memory (SRAM) half-select disturb elimination structure based on a hierarchical bit line structure. The SRAM half-select disturb elimination structure based on the hierarchical bit line structure comprises a storage array which has the hierarchical bit line structure; each storage unit of the storage array has a single reading operation branch; each column of the storage array is divided into a plurality of sub-modules. According to the SRAM half-select disturb elimination structure based on the hierarchical bit line structure, by utilizing virtual ground wire control, a ground wire of the reading operation branch of each storage unit in each sub-module is singly guided out, and is uniformly connected with an actual ground wire through a ground wire control switch; additionally, column selection signals Col of a corresponding column of each sub-module control a conduction state of each ground wire control switch, and a bit line discharge path of an unselected column unit during a reading operation is switched off, so that static power consumption caused by half select disturb is completely eliminated; however, due to utilization of a local bit line suspension technology, unselected column is forced to locally suspend in a writing operation, so that a short circuit discharge path is eliminated; meanwhile, the disturbance of local bit lines to a half-select unit is effectively reduced, so that unit robustness is improved, and noise margin is increased.