The invention relates to the technical field of semiconductors, and discloses an
image sensor and a preparation method thereof. In the
image sensor, a plurality of columnar through holes are distributed in a
dielectric layer above a photosensitive device of each photosensitive area to form a
light guide area which is used for guiding light into a photosensitive device, and incident light can be bound in the
light guide area to prevent light rays from being shot into adjacent pixel photosensitive areas during propagation to cause light
crosstalk, so that the propagation
route of the incident light in the
light guide area is improved; and the transmission characteristics of the light guide area can be adjusted by controlling the parameters such as the pore size, the
dielectric material, the distribution density and the like of the through holes in the light guide area, and controlling the arrangement mode of the through holes, so that an effect of improving the
light intensity of the light shot into the light guide area is achieved. Moreover, based on the conventional
image sensor circuit, a plurality of through holes are formed in the
dielectric layer above the photosensitive area by using an
etching and mat accumulation process, so that the image sensor is easy and convenient to operate and easy for
mass production.