38results about How to "Increase deposition thickness" patented technology

Described is an apparatus for detecting and removing deposits from a surface exposed to wellbore fluids. The apparatus can monitor the rate of deposition and subsequently remove the deposited material. The combination of detection apparatus and removal apparatus provides an instrument with self-cleaning operation mode.

In a split gate type nonvolatile memory cell in which a MOS transistor for a nonvolatile memory using a charge storing film and a MOS transistor for selecting it are adjacently formed, the charge storing characteristic is improved and the resistance of the gate electrode is reduced. In order to prevent the thickness reduction at the corner portion of the charge storing film and improve the charge storing characteristic, a taper is formed on the sidewall of the select gate electrode. Also, in order to stably perform a silicide process for reducing the resistance of the self-aligned gate electrode, the sidewall of the select gate electrode is recessed. Alternatively, a discontinuity is formed between the upper portion of the self-aligned gate electrode and the upper portion of the select gate electrode.

Described is a downhole apparatus for detecting and removing deposits from a surface exposed to wellbore fluids. The apparatus can monitor the rate of deposition and subsequently remove the deposited material. The combination of detection apparatus and removal apparatus provides a downhole instrument with self-cleaning operation mode.

In a split gate type nonvolatile memory cell in which a MOS transistor for a nonvolatile memory using a charge storing film and a MOS transistor for selecting it are adjacently formed, the charge storing characteristic is improved and the resistance of the gate electrode is reduced. In order to prevent the thickness reduction at the corner portion of the charge storing film and improve the charge storing characteristic, a taper is formed on the sidewall of the select gate electrode. Also, in order to stably perform a silicide process for reducing the resistance of the self-aligned gate electrode, the sidewall of the select gate electrode is recessed. Alternatively, a discontinuity is formed between the upper portion of the self-aligned gate electrode and the upper portion of the select gate electrode.

The present invention relates to an ultra high speed preparation method for an ultra thick diamond-like coating. According to the method, a plasma immersion ion injection and high density plasma chemical vapor deposition integration technology is adopted to achieve ultra high speed deposition of an ultra thick diamond-like coating on various sample substrates such as stainless steel, aluminum alloy, titanium alloy, copper, ceramics and the like, wherein a deposition rate is 80-140 nm / min. The method comprises: firstly performing silicon or nitrogen immersion ion injection on a sample substrate, and adopting high density plasma effect alternating deposition to periodically change silicon content in a diamond-like coating in mixing atmosphere of silane, acetylene and argon to finally obtain the ultra thick diamond-like coating with a thickness of 8-30 mum on the sample substrate. The obtained ultra thick diamond-like coating has characteristics of high film substrate binding strength, low friction coefficient and long service life.

The invention provides a composite coating on the surface of a valve sealing piece. The coating takes the valve sealing piece as a base body and consists of a Cr layer, a Cr / Cr2N layer formed by mixing Cr and Cr2N, a Cr2N layer, a Cr2N / CrN layer formed by mixing the Cr2N and CrN, and a CrN layer. Compared with an existing CrN coating with a single structure, the composite coating with multiple layers of gradients has the advantages that the bearing and anti-abrasion capability and the corrosion resistance are improved. Furthermore, the composite coating is prepared by a multi-arc ion plating technology, and the respective layers are obtained by sequentially performing deposition on the surface of the base body by controlling the argon flow, the nitrogen flow and the deposition time; the preparation method is simple and feasible; batch production can be realized; the composite coating has a good application prospect.

The invention provides a device and a method for realizing a three-dimensional printing micro-nano structure by utilizing alternating-current electrospining. The method comprises the following steps of: putting printing raw materials into an injecting system, and forming spherical liquid drops of the printing raw materials at a needle head; applying alternating-current high-voltage electricity to the needle head and a receiving plate, and forming alternating high-voltage electric fields between the needle head and the receiving plate, enabling the printing raw materials to form single jet flow under the action of the alternating high-voltage electric fields, and depositing the single jet flow on the receiving plate to form micro-nano fibers; enabling the temperature of the receiving plate to be stabilized to be lower than a smelting point of the printing raw materials, and curing micro-nano fibers; controlling the receiving plate to move, thereby obtaining layered sections of a three-dimensional model; and sequentially scanning each layer of the three-dimensional model to complete printing of the three-dimensional model. The method can effectively improve three-dimensional printing precision.

The invention belongs to the technical field of metal surface treatment, and relates to an aluminum alloy anode oxidation technology. According to the technology, an aluminum alloy section is arrangedin an electrolytic bath loaded with oxidation electrolyte, so as to be electrolyzed; the electrolysis temperature is 10 to 30 DEG C; the aluminum alloy section is taken as an anode; a lead plate is taken as a cathode; an electrolysis mode is a direct current-alternating current overlapped method, so that an oxidation film is formed on the surface of the aluminum alloy section subjected to anode oxidation, the electrolysis speed is further improved through strict controlling of direct current-alternating current ratio, the deposition rate of the oxidation film is improved, an oxidation film with the thickness greater than 100 micrometers can be formed within 5min, the micro hardness of the obtained aluminum alloy section oxidation film is greatly improved, defects on the surface of the oxidation film are reduced, and the surface texture is denser.

According to one embodiment of the invention, a method for nickel silicidation includes providing a substrate having a source region, a gate region, and a drain region, forming a source in the source region and a drain in the drain region, annealing the source and the drain, implanting, after the annealing the source and the drain, a heavy ion in the source region and the drain region, depositing a nickel layer in each of the source and drain regions, and heating the substrate to form a nickel silicide region in each of the source and drain regions by heating the substrate.

The invention discloses a preparation method of a super-hydrophobic electromagnetic shielding fabric. The preparation method comprises the steps of firstly constructing graphene oxide on the surface of a cationized fabric, then adsorbing aniline monomer molecules on the surface of the fabric, then polymerizing the aniline monomer into polyaniline through an oxidant to form a fabric constructed bygraphene / polyaniline, and finally finishing emulsified carnauba wax on the fabric through an impregnation method. Compared with the prior art, the preparation method of the super-hydrophobic electromagnetic shielding fabric has the advantages that super-hydrophobization finishing is carried out on a coated fabric, so that the durability of the shielding performance of the fabric is improved. Special equipment is not needed in the whole assembly process, the requirement on experimental conditions is not high, and the production process is simple and easy to operate.

A flexible electrode electrospark deposition composite rolling machining tool includes a bearing plate, a rolling knife spindle, a rotating disk, pin rollers, an electrode spindle, a rotating joint, and a flexible electrode; the rolling knife spindle is rotatably mounted on the right side of the bearing plate, the pin rollers are rotatably mounted on the rotating disk, and the rotating disk is rotatably mounted on the lower end of the rolling knife spindle through an annular cover; the electrode spindle is rotatably mounted on the left side of the bearing plate, and the flexible electrode is mounted on an electrode clamp in a retractable mode; and the electrode clamp is installed on the lower end of the electrode spindle, and the inner ring of the rotating joint is fixed to the upper end of the electrode spindle. The invention provides the flexible electrode electrospark deposition composite rolling machining tool. The flexible electrode electrospark deposition composite rolling machining tool can be used to prepare a layer of nanocrystal on metal materials and perform flexible electrode electrospark deposition machining at the same time, so that the quality of the material surfaceis greatly improved.

A method of applying a varnish, whether or not it includes a solvent, on a component, in particular a vehicle headlight reflector, comprises the following steps: (i) selecting a varnish having a viscosity at ambient temperature of about 500 to 2000 mPa.s, and a viscosity at the application temperature which is lower than about 200 mPa.s, with a viscosity which is substantially independent of variation in the temperature within the range of application; (ii) heating the surface of the component before the step of moistening the varnish at a selected temperature thetap1; (iii) heating the varnish at the moment of application to a selected temperature thetav; and (iv) during the spreading step, maintaining the component at a selected temperature thetap2 for a selected time tp2.

The invention provides a preparation method of an anode film linear ion source assisted cBN (cubic boron nitride) coated cutting tool. The preparation method is characterized by mainly comprising steps as follows: a substrate of the cutting tool is pretreated; the substrate is placed in an anode film linear ion source assisted radio frequency magnetron sputtering deposition system for deposition of a cBN coating, specific parameters of the deposition are as follows: flow of N2 is 5-10 sccm, flow of Ar is 25-40 sccm, the substrate is arranged above a target material about 90 mm, back bias voltage of the substrate is 100-220 V, substrate temperature is 600-900 DEG C, radio-frequency power is 300 W, anode film linear ion source power is 100-300 W, base pressure is 5*10<-4>Pa, deposition pressure is 0.5 Pa, and deposition time is 4-5 h. The preparation method has the advantages that the process is simple, the operation is easier, bonding performance of the coating and the substrate is improved remarkably, and toughness of the cutting tool is improved greatly.

The invention provides a zero-mode waveguide hole wall modification method. The method comprises the following steps: covering a polymer; irradiating ultraviolet light on the surface of a metal covering layer to form a first chemical bond; and stripping the polymer. The invention also relates to a zero-mode waveguide hole structure. The hole wall of the zero-mode waveguide hole is covered with thepolymer, and ultraviolet light irradiates the surface of the metal covering layer for bonding to form a high-refractive-index non-reflective first chemical bond; the in-hole volume of the zero-mode waveguide hole can be reduced by increasing the deposition thickness of the first chemical bond of the high-refractive-index non-reflective material, so that free nucleotides in the hole can be significantly reduced, and the signal-to-noise ratio can be improved. Besides, the position of excited fluorescence can be far away from the metal wall of the zero-mode waveguide hole by depositing the firstchemical bond of a high-refractive-index non-reflective material in the hole, so that the fluorescence cannot be weakened or even quenched, and the detection is more sensitive while the fluorescenceeffect is enhanced.

The invention relates to the technical field of display, especially to an array substrate and a preparation method thereof. The array substrate and the preparation method thereof are used to solve theproblem that overlap regions between a gate and a source and a drain are prone to short circuit in the related art, which causes the decrease of panel yield. The embodiments of the invention providesthe array substrate. Multiple TFTs are arranged on the array substrate. Each TFT includes an active layer, a gate insulating layer, a gate, a first interlayer insulating layer, a second interlayer insulating layer, a source and a drain which are arranged on the substrate in order. Each source and drain are in contact with the corresponding active layer at least passing through a hole through thecorresponding first interlayer insulating layer. Each second interlayer insulating layer includes a first insulation pattern. Each first insulation pattern is located between the corresponding first interlayer insulating layer and the corresponding source and the corresponding drain and is located in the area where the corresponding TFT is located. Each first insulation pattern at least covers anoverlap region between the corresponding source and the corresponding drain and the side surface of the corresponding gate in the area where the corresponding TFT is located. The array substrate and the preparation method thereof are used for production and manufacturing of display panels.

The invention relates to a pulmonary fibrosis animal model building method. The method comprises the step that a pulmonary fibrosis animal model is prepared by dripping a PM2.5 suspension into a nasalcavity. The method has the advantages that a mouse pulmonary fibrosis model is built through PM2.5 nasal cavity dripping for the first time, the feasibility is verified through experiments, and by means of PM2.5 nasal cavity dripping for eight consecutive weeks, mouse pulmonary fibrosis can be induced. According to the pulmonary fibrosis animal model building method, bleomycin is not used, an airpipe is not used for dripping, operation is easy and convenient, and the trauma is small.

The invention relates to a multilayer multi-element composite hard PVD coating with low friction coefficient on the surface of a piston ring, a piston ring and a preparation process. The present invention employs vacuum multi-arc ion plating vapor deposition process, which uses multiple multi-arc ion sources, in the combination of equipping with different single metal target material and multi-element target material to deposit multilayer multi-element composite hard PVD coating with low friction coefficient on the surface of a steel or cast iron piston ring. The coating consists of five layers with the total thickness of up to 60 μm. The coating has high adhesion with the surface of piston ring, high hardness, low friction coefficient and good abrasion resistance. By controlling the adding amount of additive elements Al, Mo, W, B, Si and Ti, the friction coefficient of the coating can be further reduced 5 to 20% compared with that of a single TiN or CrN deposited layer.

The invention provides a manufacturing method for a deep trough isolation structure. The manufacturing method is characterized in that a semiconductor substrate is provided, a shallow trough isolationstructure and a grid are formed in the semiconductor substrate; a first dielectric layer is formed, the first dielectric layer covers the semiconductor substrate, the shallow trough isolation structure and the grid, and thickness of the first dielectric layer is greater than thickness of a target side; an opening is formed, the opening penetrates through the first dielectric layer and the shallowtrough isolation structure, and the semiconductor substrate is exposed; the first dielectric layer is taken as a mask, and the semiconductor substrate is etched in the opening to form a deep trough;the first dielectric layer on the surface of the semiconductor substrate, the surface of the shallow trough isolation structure and a top surface of the grid is removed, the first dielectric layer ona side wall of the grid is reserved to form a side wall structure, and thickness of the side wall structure is thickness of the target side wall; a second dielectric layer is formed, and the deep trough is filled by the second dielectric layer to form the deep trough isolation structure.

According to one embodiment of the invention, a method for nickel silicidation includes providing a substrate having a source region, a gate region, and a drain region, forming a source in the source region and a drain in the drain region, annealing the source and the drain, implanting, after the annealing the source and the drain, a heavy ion in the source region and the drain region, depositing a nickel layer in each of the source and drain regions, and heating the substrate to form a nickel silicide region in each of the source and drain regions by heating the substrate.

An adhesive composition includes a polymer, inorganic fillers, and at least one organic solvent. The polymer is at least one preceramic polymer, advantageously based on silicon. The fillers include one or a plurality of thermally conductive and electrically insulating inorganic fillers.

The invention discloses a method for improving the performance of a non-volatile memory. In the process of producing an oxygen-nitrogen-oxygen structure in the non-volatile memory, the method comprises the following steps of: performing deposition on a wafer substrate to obtain a silicon dioxide surface layer; performing the deposition on the silicon dioxide surface layer to form a silicon nitride layer; and generating positive oxygen ions by an in-situ steam generating method, and after the generated positive oxygen ions is reacted with the silicon nitride layer to form silicon oxynitride, performing the deposition to obtain a high-temperature oxide layer. The method provided by the invention improves the performance of the non-volatile memory.

An arrangement for measurement of temperature and thickness growth of silicon rods in a silicon deposition reactor employs a temperature measurement device located outside the reactor. Continuous temperature measurement and measurement of the thickness growth throughout the entire deposition process is achieved with a contactlessly operating temperature measurement device arranged outside the silicon deposition reactor in front of a viewing window. The temperature measurement device can be pivoted horizontally about a rotation axis by a rotating drive. The pivoting axis runs parallel to a longitudinal axis of the silicon rod, and the central axis of the temperature measurement device runs through the pivoting axis.

The invention provides a method for manufacturing an electroplating seed layer. The function of the electroplating seed layer lies in that a good conducting layer is provided for the subsequent metal electroplating technology. The manufacturing method is used for a semiconductor device. At least one contact hole is formed in the surface of the semiconductor device, and the hole bottoms of the contact holes are made of metal. The manufacturing method includes the steps that the electroplating seed layer is deposited on the surface of the semiconductor device through the chemical metal coating technology, and covers the surface of the semiconductor device and the hole walls and the hole bottoms of the contact holes; the deposition thickness of the positions, located on the hole bottoms of the contact holes, of the electroplating seed layer is increased through the metal vacuum evaporation process, so that the electroplating seed layer completely covers the hole bottoms of the contact holes. In this way, the phenomenon that the hole bottoms of the contact holes of the electroplating seed layer are disconnected can be prevented.

The present invention relates to the field of display technology, in particular to an array substrate and a preparation method thereof. The method is used to solve the problem in the related art that the overlapping area between the gate, the source and the drain is prone to short circuit, which causes the yield rate of the panel to decrease. An embodiment of the present invention provides an array substrate, on which a plurality of TFTs are arranged, and each TFT includes an active layer, a gate insulating layer, a gate, a first interlayer insulating layer, The second interlayer insulating layer, the source electrode and the drain electrode; the source electrode and the drain electrode are in contact with the active layer at least through the via holes penetrating the first interlayer insulating layer; the second interlayer insulating layer includes a first insulating pattern, the first The insulating pattern is located between the first interlayer insulating layer and the source and drain, and is located in the area where the TFT is located. The first insulating pattern at least covers the overlapping area of ​​the side of the source, the drain and the gate in the area where the TFT is located. The embodiments of the present invention are used in the production and manufacture of display panels.

The invention discloses a novel ion cleaning technology based on plating of a hard alloy surface with ta-C film. The technology comprises the following steps that 1, impurities on the surface of a plasma substrate are ultrasonically cleaned, and charging is performed; 2, arc light enhanced argon ion bombardment is carried out in vacuum coating equipment to remove the impurities on the surface of the substrate, arc ion plating is adopted as an ionization source, the density of provided electron flow can reach 10+19 / m<3>, meanwhile, a columnar coating cathode opposite to the ionization source is converted into an anode in the process, the high-density electron flow is guided to pass through a cleaned workpiece area, Ar atoms are ionized, and the Ar<+> flow is used as an ion cleaning source for the workpiece; and 3, a vacuum plating technology step is started. According to the technology, the high-density ion flow can be provided for cleaning the workpiece, and it is guaranteed that all angles of the workpiece are fully cleaned; and under the condition that low bias voltage is used, excessive bombardment action of overhigh metal ion current on the precise workpiece can be prevented, and the workpiece is prevented from being damaged.

The invention provides a method for modifying the wall of a zero-mode waveguide hole, which includes covering polymer, irradiating ultraviolet light to form a first chemical bond on the surface of the metal covering layer, and peeling off the polymer. The invention also relates to a zero-mode waveguide hole structure. In the present invention, the polymer is covered on the hole wall of the zero-mode waveguide hole, and the surface of the metal coating layer is irradiated by ultraviolet light to bond to form a first chemical bond with a high refractive index non-reflection; increase the high refractive index non-reflective material The deposition thickness of the first chemical bond can reduce the volume in the hole of the zero-mode waveguide hole, significantly reduce the free nucleotides in the hole, and improve the signal-to-noise ratio. In addition, by depositing the first chemical bond of a high-refractive index non-reflective material inside the hole, the position of the excited fluorescence can be kept away from the metal wall of the zero-mode waveguide hole, so that the fluorescence will not be weakened or even quenched. more sensitive.

The invention discloses a clamping device for an electrical contact of an isolating switch, comprising: a base, a first clamping part and a second clamping part; the first clamping part comprises: two first telescopic rods, two second Two telescopic rods, two third telescopic rods, rollers, two first rotating shafts, two second rotating shafts and two rollers, the second clamping part includes: two fourth telescopic rods, two fifth Telescoping rod, third hinge, fourth hinge and two clips. The present invention adapts to electrical contacts of different sizes and radians by adjusting the components of the first clamping part and the second clamping part before and during spraying. Adjust the parts of the first clamping part and the second clamping part to move the electrical contacts, adjust the spraying position, angle and distance, and maintain the plane spraying of the electrical contacts, so as to improve the deposition efficiency of spraying, the quality of the deposited layer and the deposition thickness, no need to move the spraying device, greatly reducing the workload, and the operation is simple and convenient.

The invention provides a composite coating on the surface of a valve sealing piece. The coating takes the valve sealing piece as a base body and consists of a Cr layer, a Cr / Cr2N layer formed by mixing Cr and Cr2N, a Cr2N layer, a Cr2N / CrN layer formed by mixing the Cr2N and CrN, and a CrN layer. Compared with an existing CrN coating with a single structure, the composite coating with multiple layers of gradients has the advantages that the bearing and anti-abrasion capability and the corrosion resistance are improved. Furthermore, the composite coating is prepared by a multi-arc ion plating technology, and the respective layers are obtained by sequentially performing deposition on the surface of the base body by controlling the argon flow, the nitrogen flow and the deposition time; the preparation method is simple and feasible; batch production can be realized; the composite coating has a good application prospect.