38results about How to "Increase deposition thickness" patented technology

In a split gate type nonvolatile memory cell in which a MOS transistor for a nonvolatile memory using a charge storing film and a MOS transistor for selecting it are adjacently formed, the charge storing characteristic is improved and the resistance of the gate electrode is reduced. In order to prevent the thickness reduction at the corner portion of the charge storing film and improve the charge storing characteristic, a taper is formed on the sidewall of the select gate electrode. Also, in order to stably perform a silicide process for reducing the resistance of the self-aligned gate electrode, the sidewall of the select gate electrode is recessed. Alternatively, a discontinuity is formed between the upper portion of the self-aligned gate electrode and the upper portion of the select gate electrode.

The present invention relates to an ultra high speed preparation method for an ultra thick diamond-like coating. According to the method, a plasma immersion ion injection and high density plasma chemical vapor deposition integration technology is adopted to achieve ultra high speed deposition of an ultra thick diamond-like coating on various sample substrates such as stainless steel, aluminum alloy, titanium alloy, copper, ceramics and the like, wherein a deposition rate is 80-140 nm/min. The method comprises: firstly performing silicon or nitrogen immersion ion injection on a sample substrate, and adopting high density plasma effect alternating deposition to periodically change silicon content in a diamond-like coating in mixing atmosphere of silane, acetylene and argon to finally obtain the ultra thick diamond-like coating with a thickness of 8-30 mum on the sample substrate. The obtained ultra thick diamond-like coating has characteristics of high film substrate binding strength, low friction coefficient and long service life.

According to one embodiment of the invention, a method for nickel silicidation includes providing a substrate having a source region, a gate region, and a drain region, forming a source in the source region and a drain in the drain region, annealing the source and the drain, implanting, after the annealing the source and the drain, a heavy ion in the source region and the drain region, depositing a nickel layer in each of the source and drain regions, and heating the substrate to form a nickel silicide region in each of the source and drain regions by heating the substrate.

The invention discloses a preparation method of a super-hydrophobic electromagnetic shielding fabric. The preparation method comprises the steps of firstly constructing graphene oxide on the surface of a cationized fabric, then adsorbing aniline monomer molecules on the surface of the fabric, then polymerizing the aniline monomer into polyaniline through an oxidant to form a fabric constructed bygraphene/polyaniline, and finally finishing emulsified carnauba wax on the fabric through an impregnation method. Compared with the prior art, the preparation method of the super-hydrophobic electromagnetic shielding fabric has the advantages that super-hydrophobization finishing is carried out on a coated fabric, so that the durability of the shielding performance of the fabric is improved. Special equipment is not needed in the whole assembly process, the requirement on experimental conditions is not high, and the production process is simple and easy to operate.

A flexible electrode electrospark deposition composite rolling machining tool includes a bearing plate, a rolling knife spindle, a rotating disk, pin rollers, an electrode spindle, a rotating joint, and a flexible electrode; the rolling knife spindle is rotatably mounted on the right side of the bearing plate, the pin rollers are rotatably mounted on the rotating disk, and the rotating disk is rotatably mounted on the lower end of the rolling knife spindle through an annular cover; the electrode spindle is rotatably mounted on the left side of the bearing plate, and the flexible electrode is mounted on an electrode clamp in a retractable mode; and the electrode clamp is installed on the lower end of the electrode spindle, and the inner ring of the rotating joint is fixed to the upper end of the electrode spindle. The invention provides the flexible electrode electrospark deposition composite rolling machining tool. The flexible electrode electrospark deposition composite rolling machining tool can be used to prepare a layer of nanocrystal on metal materials and perform flexible electrode electrospark deposition machining at the same time, so that the quality of the material surfaceis greatly improved.

The invention provides a zero-mode waveguide hole wall modification method. The method comprises the following steps: covering a polymer; irradiating ultraviolet light on the surface of a metal covering layer to form a first chemical bond; and stripping the polymer. The invention also relates to a zero-mode waveguide hole structure. The hole wall of the zero-mode waveguide hole is covered with thepolymer, and ultraviolet light irradiates the surface of the metal covering layer for bonding to form a high-refractive-index non-reflective first chemical bond; the in-hole volume of the zero-mode waveguide hole can be reduced by increasing the deposition thickness of the first chemical bond of the high-refractive-index non-reflective material, so that free nucleotides in the hole can be significantly reduced, and the signal-to-noise ratio can be improved. Besides, the position of excited fluorescence can be far away from the metal wall of the zero-mode waveguide hole by depositing the firstchemical bond of a high-refractive-index non-reflective material in the hole, so that the fluorescence cannot be weakened or even quenched, and the detection is more sensitive while the fluorescenceeffect is enhanced.

The invention relates to the technical field of display, especially to an array substrate and a preparation method thereof. The array substrate and the preparation method thereof are used to solve theproblem that overlap regions between a gate and a source and a drain are prone to short circuit in the related art, which causes the decrease of panel yield. The embodiments of the invention providesthe array substrate. Multiple TFTs are arranged on the array substrate. Each TFT includes an active layer, a gate insulating layer, a gate, a first interlayer insulating layer, a second interlayer insulating layer, a source and a drain which are arranged on the substrate in order. Each source and drain are in contact with the corresponding active layer at least passing through a hole through thecorresponding first interlayer insulating layer. Each second interlayer insulating layer includes a first insulation pattern. Each first insulation pattern is located between the corresponding first interlayer insulating layer and the corresponding source and the corresponding drain and is located in the area where the corresponding TFT is located. Each first insulation pattern at least covers anoverlap region between the corresponding source and the corresponding drain and the side surface of the corresponding gate in the area where the corresponding TFT is located. The array substrate and the preparation method thereof are used for production and manufacturing of display panels.

The invention relates to a pulmonary fibrosis animal model building method. The method comprises the step that a pulmonary fibrosis animal model is prepared by dripping a PM2.5 suspension into a nasalcavity. The method has the advantages that a mouse pulmonary fibrosis model is built through PM2.5 nasal cavity dripping for the first time, the feasibility is verified through experiments, and by means of PM2.5 nasal cavity dripping for eight consecutive weeks, mouse pulmonary fibrosis can be induced. According to the pulmonary fibrosis animal model building method, bleomycin is not used, an airpipe is not used for dripping, operation is easy and convenient, and the trauma is small.

The invention provides a manufacturing method for a deep trough isolation structure. The manufacturing method is characterized in that a semiconductor substrate is provided, a shallow trough isolationstructure and a grid are formed in the semiconductor substrate; a first dielectric layer is formed, the first dielectric layer covers the semiconductor substrate, the shallow trough isolation structure and the grid, and thickness of the first dielectric layer is greater than thickness of a target side; an opening is formed, the opening penetrates through the first dielectric layer and the shallowtrough isolation structure, and the semiconductor substrate is exposed; the first dielectric layer is taken as a mask, and the semiconductor substrate is etched in the opening to form a deep trough;the first dielectric layer on the surface of the semiconductor substrate, the surface of the shallow trough isolation structure and a top surface of the grid is removed, the first dielectric layer ona side wall of the grid is reserved to form a side wall structure, and thickness of the side wall structure is thickness of the target side wall; a second dielectric layer is formed, and the deep trough is filled by the second dielectric layer to form the deep trough isolation structure.

The invention discloses a method for improving the performance of a non-volatile memory. In the process of producing an oxygen-nitrogen-oxygen structure in the non-volatile memory, the method comprises the following steps of: performing deposition on a wafer substrate to obtain a silicon dioxide surface layer; performing the deposition on the silicon dioxide surface layer to form a silicon nitride layer; and generating positive oxygen ions by an in-situ steam generating method, and after the generated positive oxygen ions is reacted with the silicon nitride layer to form silicon oxynitride, performing the deposition to obtain a high-temperature oxide layer. The method provided by the invention improves the performance of the non-volatile memory.

The invention discloses a novel ion cleaning technology based on plating of a hard alloy surface with ta-C film. The technology comprises the following steps that 1, impurities on the surface of a plasma substrate are ultrasonically cleaned, and charging is performed; 2, arc light enhanced argon ion bombardment is carried out in vacuum coating equipment to remove the impurities on the surface of the substrate, arc ion plating is adopted as an ionization source, the density of provided electron flow can reach 10+19/m<3>, meanwhile, a columnar coating cathode opposite to the ionization source is converted into an anode in the process, the high-density electron flow is guided to pass through a cleaned workpiece area, Ar atoms are ionized, and the Ar<+> flow is used as an ion cleaning source for the workpiece; and 3, a vacuum plating technology step is started. According to the technology, the high-density ion flow can be provided for cleaning the workpiece, and it is guaranteed that all angles of the workpiece are fully cleaned; and under the condition that low bias voltage is used, excessive bombardment action of overhigh metal ion current on the precise workpiece can be prevented, and the workpiece is prevented from being damaged.