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Method for improving performance of non-volatile memory

A non-volatile memory technology, applied in the manufacture of electrical solid-state devices, semiconductor devices, semiconductor/solid-state devices, etc., can solve the problems of low performance of SONOS, achieve the goal of improving charge capture efficiency, increasing deposition thickness, and improving performance Effect

Inactive Publication Date: 2011-01-12
SEMICON MFG INT (SHANGHAI) CORP +1
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Problems solved by technology

[0015] Although SONOS can be obtained by using this method, due to the limitation of the process, the performance of the obtained SONOS is not high. The performance of SONOS includes the charge capture efficiency and the leakage current performance of SONOS.

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  • Method for improving performance of non-volatile memory

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[0047] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and examples.

[0048] For the oxygen-nitride-oxygen structure in non-volatile memory, the thickness of the silicon nitride layer determines the charge trapping efficiency of the non-volatile memory, and the silicon nitride oxide between the silicon nitride layer and the top oxide layer Determines the leakage current performance of the non-volatile memory. Therefore, in order to improve the performance of the nonvolatile memory, it is necessary to improve the oxynitride structure of the nonvolatile memory.

[0049]In the present invention, in order to improve the leakage current performance of the non-volatile memory, when silicon oxynitride is formed between the silicon nitride layer and the upper oxide layer, the in-situ steam generation method is used to generate po...

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Abstract

The invention discloses a method for improving the performance of a non-volatile memory. In the process of producing an oxygen-nitrogen-oxygen structure in the non-volatile memory, the method comprises the following steps of: performing deposition on a wafer substrate to obtain a silicon dioxide surface layer; performing the deposition on the silicon dioxide surface layer to form a silicon nitride layer; and generating positive oxygen ions by an in-situ steam generating method, and after the generated positive oxygen ions is reacted with the silicon nitride layer to form silicon oxynitride, performing the deposition to obtain a high-temperature oxide layer. The method provided by the invention improves the performance of the non-volatile memory.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for improving the performance of a nonvolatile memory. Background technique [0002] With the development of semiconductor manufacturing technology, the application of non-volatile memory is more and more extensive. Non-volatile memories are gradually developing towards smaller and smaller volumes and larger and larger storage capacities. Although Electronically Erasable Read-Only Memory (EEPROM) is currently the mainstream of non-volatile memory, it cannot increase storage capacity in a limited volume due to its limitation in vertical scaling. [0003] Therefore, an embedded non-volatile memory (SONOS) has emerged. Due to the small size, low operating voltage, simple data access and radiation resistance of SONOS, the application of SONOS has become more and more popular. In SONOS, the oxide layer-nitride layer-oxide layer (ONO) three-layer structure is used ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/8247H01L21/283H10B43/30
Inventor 沈忆华宋化龙潘见王辛史运泽
Owner SEMICON MFG INT (SHANGHAI) CORP
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