Arrangement and method for measurement of temperature and of thickness growth of silicon rods in silicon deposition reactor

Abstract

An arrangement for measurement of temperature and thickness growth of silicon rods in a silicon deposition reactor employs a temperature measurement device located outside the reactor. Continuous temperature measurement and measurement of the thickness growth throughout the entire deposition process is achieved with a contactlessly operating temperature measurement device arranged outside the silicon deposition reactor in front of a viewing window. The temperature measurement device can be pivoted horizontally about a rotation axis by a rotating drive. The pivoting axis runs parallel to a longitudinal axis of the silicon rod, and the central axis of the temperature measurement device runs through the pivoting axis.

Description

technical field [0001] The invention relates to a device and method for measuring the temperature and growth thickness of silicon rods in a silicon deposition reactor through a temperature measuring device located outside the silicon deposition reactor. Background technique [0002] The manufacturing process for polysilicon is based on a method in which gaseous trichlorosilane, together with hydrogen, enters a vacuum reactor in which thin silicon rods have been previously arranged as raw materials and said thin silicon rods are electrically Heat to a temperature of about 1100 degrees Celsius. This method is known as the so-called SIEMENS method. In this case, strict care must be taken not to reach the melting temperature of silicon. In this case, silicon is deposited on silicon rods, where it is formed in a chemical reaction from trichlorosilane. The polysilicon pillars produced in this way are then available for further processing. [0003] The silicon pillars are once ...

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Problems solved by technology

This is because catastrophic consequences can arise from briefly exceeding the nominal temperature

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