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Ultra high speed preparation method for ultra thick diamond-like coating

A diamond coating, ultra-high-speed technology, applied in metal material coating process, coating, ion implantation plating, etc., can solve the problems of ultra-thick diamond-like coating, large internal stress, poor bonding of film base, etc. Achieve the effect of simple process and good controllability of coating thickness

Active Publication Date: 2013-03-27
LANZHOU INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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  • Claims
  • Application Information

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Problems solved by technology

[0004] In order to solve the problem that ultra-thick diamond-like carbon coatings cannot be obtained at high deposition rates due to poor film-base bonding and large internal stress, the invention provides an ultra-high-speed preparation method for ultra-thick diamond-like carbon coatings, which can Ultra-high-speed and uniform deposition of ultra-thick diamond-like coatings on various substrates under low vacuum

Method used

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  • Ultra high speed preparation method for ultra thick diamond-like coating

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Experimental program
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Effect test

Embodiment 1

[0021] The sample base is a P(100) silicon wafer of 6cm×6cm×0.5mm.

[0022] 1. Place the silicon wafer after ultrasonic cleaning with acetone and alcohol in the vacuum chamber of the integrated injection and deposition equipment, and pump the background vacuum to 2×10 -1 After Pa, argon gas is introduced, and a negative pulse bias voltage of 5KV is applied on the silicon wafer by using a high-voltage DC pulse power supply. The pulse frequency is 1.4KHz, the duty cycle is 30%, and the vacuum degree is kept at 1.3Pa. plasma cleaning and activation.

[0023] 2. Introduce nitrogen gas according to the mixing ratio of argon gas and nitrogen gas 1.8:1, adjust the negative pulse bias voltage to 25KV, keep the vacuum degree at 2.5Pa, and implement nitrogen element implantation into the silicon wafer for 20min.

[0024] 3. Introduce acetylene and silane according to the mixing ratio of argon, silane and acetylene 1:1:3, apply a negative pulse bias voltage of 700V on the silicon wafer ...

Embodiment 2

[0028] The sample base is a steel sheet (1Cr18Ni9Ti) of 60cm×60cm×1mm.

[0029] 1. Utilize the method for embodiment 1 step 1 to implement pretreatment to steel sheet.

[0030] 2. Introduce silane gas according to the mixing ratio of argon and silane 1.5:1, adjust the negative pulse bias voltage to 25KV, keep the vacuum at 2Pa, and inject silicon element into the steel sheet for 30min.

[0031] 3. Introduce acetylene and silane according to the mixing ratio of argon, silane and acetylene 1:1:3, and apply a negative pulse bias voltage of 650V on the steel sheet with a low-voltage DC pulse power supply, the pulse frequency is 800Hz, and the duty cycle is 50%. , keeping the vacuum degree at 3.5Pa, and depositing diamond-like carbon with low doped silicon content for 15 minutes.

[0032]4. According to the mixing ratio of argon, silane and acetylene 2:1:5, reduce the silane and increase the flow of argon, adjust the negative pulse bias voltage on the steel sheet to 800V, and depo...

Embodiment 3

[0035] The sample base is an aluminum alloy sheet (6061) of 30cm×30cm×2.5mm.

[0036] 1. Using the method and parameters in Step 1 of Example 1 to perform pretreatment on the aluminum alloy sheet.

[0037] 2. Introduce nitrogen gas according to the mixing ratio of argon gas and nitrogen gas 1.8:1, adjust the negative pulse bias voltage to 30KV, keep the vacuum degree at 2.5Pa, and inject nitrogen element into the aluminum alloy sheet for 30min.

[0038] 3. Introduce acetylene and silane according to the mixing ratio of argon, silane and acetylene 1:1:4, apply a negative pulse bias voltage of 500V on the aluminum alloy sheet with a low-voltage DC pulse power supply, the pulse frequency is 800Hz, and the duty cycle is 50 %, keep the vacuum at 3.8Pa, and deposit diamond-like carbon with low doped silicon content for 10 minutes.

[0039] 4. According to the mixing ratio of argon, silane and acetylene 2:1:6, reduce silane and increase the flow rate of argon, adjust the negative pu...

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Abstract

The present invention relates to an ultra high speed preparation method for an ultra thick diamond-like coating. According to the method, a plasma immersion ion injection and high density plasma chemical vapor deposition integration technology is adopted to achieve ultra high speed deposition of an ultra thick diamond-like coating on various sample substrates such as stainless steel, aluminum alloy, titanium alloy, copper, ceramics and the like, wherein a deposition rate is 80-140 nm / min. The method comprises: firstly performing silicon or nitrogen immersion ion injection on a sample substrate, and adopting high density plasma effect alternating deposition to periodically change silicon content in a diamond-like coating in mixing atmosphere of silane, acetylene and argon to finally obtain the ultra thick diamond-like coating with a thickness of 8-30 mum on the sample substrate. The obtained ultra thick diamond-like coating has characteristics of high film substrate binding strength, low friction coefficient and long service life.

Description

technical field [0001] The invention relates to an ultra-high-speed preparation method of an ultra-thick diamond-like coating, in particular utilizing an integrated technology combining plasma immersion ion implantation and high-density plasma chemical vapor deposition to realize ultra-high-speed deposition of an ultra-thick diamond-like coating. Background technique [0002] Due to its high hardness, ultra-low friction coefficient, high wear resistance and corrosion resistance, diamond-like coatings have shown broad application prospects in the fields of machinery, electronics, and biomedicine. However, the domestic known vapor deposition diamond-like coatings so far all have a very small thickness (<3 microns). Chinese patent CN 101298656A discloses a method for depositing a diamond-like film using a magnetic filter cathodic vacuum arc deposition method. The patented method can obtain a diamond-like carbon film with very high hardness. However, the thickness of the film...

Claims

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Application Information

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IPC IPC(8): C23C14/48C23C16/44C23C14/06C23C16/27
Inventor 王立平蒲吉斌张广安杨会生薛群基
Owner LANZHOU INST OF CHEM PHYSICS CHINESE ACAD OF SCI
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