The invention provides a tunneling field effect transistor. The tunneling field effect transistor comprises a semiconductor layer, a first gate medium layer and a second gate medium layer which are respectively arranged two opposite surfaces of the semiconductor layer, a source electrode region and a drain electrode region which have different doping types, are respectively arranged at two sides of the semiconductor layer and contact with the semiconductor layer, and a first grid electrode and a second grid electrode which are respectively arranged on the first gate medium layer and the second gate medium layer. According to the tunneling field effect transistor, tunneling junctions are controlled through thickness of a channel region, a larger effective tunneling area is realized, the conduction current is further enhanced, moreover, tunneling is generated in the semiconductor layer, namely, the channel; tunneling layers are non-doped or low-doped tunneling layers, so a leakage current caused by defects can be reduced, and thereby sub-threshold characteristics of devices can be improved; dual-gate control is employed, so bipolar conduction characteristics can be better controlled, and on and off control on the devices can be realized.