Tunneling field effect transistor and manufacturing method thereof

Abstract

The invention provides a tunneling field effect transistor. The tunneling field effect transistor comprises a semiconductor layer, a first gate medium layer and a second gate medium layer which are respectively arranged two opposite surfaces of the semiconductor layer, a source electrode region and a drain electrode region which have different doping types, are respectively arranged at two sides of the semiconductor layer and contact with the semiconductor layer, and a first grid electrode and a second grid electrode which are respectively arranged on the first gate medium layer and the second gate medium layer. According to the tunneling field effect transistor, tunneling junctions are controlled through thickness of a channel region, a larger effective tunneling area is realized, the conduction current is further enhanced, moreover, tunneling is generated in the semiconductor layer, namely, the channel; tunneling layers are non-doped or low-doped tunneling layers, so a leakage current caused by defects can be reduced, and thereby sub-threshold characteristics of devices can be improved; dual-gate control is employed, so bipolar conduction characteristics can be better controlled, and on and off control on the devices can be realized.

Description

technical field [0001] The invention relates to the field of semiconductor devices, in particular to a tunneling field effect transistor and a manufacturing method thereof. Background technique [0002] With the continuous shrinking of the device size, the number of devices per unit area of ​​the chip is increasing, and how to reduce power consumption has become an increasingly prominent problem. [0003] The structure of a conventional tunneling field-effect transistor (Normal-TFET) mainly includes a substrate (channel), a gate dielectric layer, a gate, and source / drain regions on both sides of the gate. It is mainly based on the quantum tunneling effect, with P-type tunneling field effect transistor as an example, when a negative voltage is applied to the gate, the potential of the channel region rises, quantum tunneling occurs from the source region to the channel region, and the electrons and holes generated by the tunneling pass from the source region to the drain regio...

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Problems solved by technology

However, in order to reduce the sub-threshold swing and increase the conduction current, the tunneling junction needs to be as narrow as possible. However, the tunneling field-effect transistor with the existing structure will always cause the diffusion distribution of impurities during the implantation and heat treatment processes, and it is difficult to achieve a narrow junction. tunneling knot

[0005] In addition, in conventional tunneling field effect transistors, the source and drain regions are highly doped, and doping will inevitably introduce defects, and the leakage current associated with defects will destroy the reduction of subthreshold swing.

Moreover, conventional tunneling field effect transistors have bipolar characteristics that can be turned on at both positive and negative gate voltages, making it difficult to completely turn off the device

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