The invention relates to an FD-GOI
tunneling field effect transistor with an abrupt tunneling junction and a manufacturing method. The manufacturing method comprises: selecting an FD-GOI substrate; forming
shallow trench isolation with an
etching process; performing photoetching on the FD-GOI substrate to form a drain region graph and forming a drain region with an
adhesive ion implantation process; step (d), performing photoetching on the FD-GOI substrate to form a source region graph and forming a source region trench with a
dry etching process; step (e), depositing a
germanium material in the source region trench and performing in-situ
doping at the same time to form a source region with the
doping concentration higher than that of the drain region; step (f), forming a gate
interface layer, a gate medium layer and a normal gate layer on a top-layer
germanium surface of the FD-GOI substrate, and performing
etching to form a normal gate; forming a back gate layer on a bottom-layer
silicon surface of the FD-GOI substrate, and performing
etching to form a back gate; and step (g), photoetching lead windows, depositing
metal, and photoetching leads to form
metal leads of the source region, the drain region, the normal gate and the back gate, thereby finally forming the FD-GOI
tunneling field effect transistor with the abrupt tunneling junction.