Vertical channel dual-mechanism conduction nanowire tunneling transistor and preparation method

Abstract

The invention provides a vertical-channel double-mechanism conduction nano-wire tunneling transistor and a preparation method. The tunneling transistor comprises a hot electron emission source region, a tunneling source region, a channel region, a tunneling drain region and a gate of a nano-wire. The gate is controlled to encircle the channel; band-to-band tunneling happens at the interface of the tunneling source region and the channel region; the hot electron emission source region, the doping type of which is opposite to that of the tunneling source region, is arranged under the tunneling source region; and the electric potential of the tunneling source region is in floating arrangement, and the source terminal potential of a device is added to the hot electron emission source region. Compared with a conventional TFET, the vertical-channel double-mechanism conduction nano-wire tunneling transistor introduces a hot electron emission mechanism besides a tunneling mechanism through the structure design of the device, thereby enlarging the conduction current of the device effectively, meanwhile, keeping steep subthreshold slope, and improving the characteristics of the device substantially. The vertical-channel double-mechanism conduction nano-wire tunneling transistor is simple in preparation process, reduces the production cost greatly, and simplifies the process flow.

Description

technical field [0001] The invention belongs to the field of CMOS ultra-large-scale integrated circuit (ULSI) field-effect transistor logic devices, and in particular relates to a vertical channel dual mechanism conduction nanowire tunneling transistor. Background technique [0002] Since the birth of integrated circuits, microelectronics integration technology has been developing continuously in accordance with "Moore's Law", and the size of semiconductor devices has been continuously reduced. As semiconductor devices enter the deep submicron range, traditional MOSFET devices are limited by the conduction mechanism of self-diffusion drift, and the subthreshold slope is limited by the thermoelectric potential kT / q, which cannot be reduced synchronously with the reduction of device size. As a result, the reduction of leakage current of MOSFET devices cannot meet the requirements of device size reduction, the energy consumption of the entire chip continues to rise, and the pow...

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Problems solved by technology

[0003] However, due to the low efficiency of semiconductor band-band tunneling, the on-state current of TFET is lower than that of traditional MOSFETs, which cannot meet the requirements of system integration applications.

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