According to an embodiment, the present invention provide method for fabricating a
copper indium diselenide semiconductor film. The method includes providing a plurality of substrates, each of the substrates having a
copper and
indium composite structure, each of the substrate including a
peripheral region, the
peripheral region including a plurality of openings, the plurality of openings including at least a first opening and a second opening. The also includes transferring the plurality of substrates into a furnace, each of the plurality of substrates provided in a
vertical orientation with respect to a direction of gravity, the plurality of substrates being defined by a number N, where N is greater than 5, the furnace including a holding apparatus, the holding apparatus including a first elongated member being configured to hang each of the substrates using at least the first opening. The method further includes introducing a gaseous species including a
hydrogen species and a
selenide species and a carrier gas into the furnace and transferring
thermal energy into the furnace to increase a temperature from a first temperature to a second temperature, the second temperature
ranging from about 350° C. to about 450° C. to at least initiate formation of a
copper indium diselenide film from the copper and indium
composite structure on each of the substrates.